ZBD849
Abstract: transistor bf 970
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A MARCH 94 FEATURES * Fast switching
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ZBD849
ZBD849
transistor bf 970
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V23990-P81-A20-PM
Abstract: No abstract text available
Text: datasheet version 02/03 V23990-P81-A20-PM flow PIM 1, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P81-A20-PM
D81359
V23990-P81-A20-PM
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tyco igbt
Abstract: V23990-P54X-A V23990-P541-A K3028
Text: V23990-P541-A final datasheet Version 05/03 flow PIM 0, 600V Maximum values Parameter Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom Surge forward current
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V23990-P541-A
40-limited
10-limited
D81359
tyco igbt
V23990-P54X-A
V23990-P541-A
K3028
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tyco igbt
Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Text: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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V23990-P361-F
D81359
tyco igbt
P361
ntc thermistor 500 ohm
SPWM Inverter circuit
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1084-VV
Abstract: AP1084
Text: This Anachip version datasheet is replaced with Diodes Inc. datasheet AP1084 AP1084 5A Low Dropout Positive Adjustable or Fixed-Mode Regulator Features • • • • • • • General Description AP1084 is a low dropout positive adjustable or fixedmode regulator with minimum of 5.0A output current
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AP1084
AP1084
1084-VV
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Untitled
Abstract: No abstract text available
Text: KSC2334 KSC2334 High Speed Switching Industrial Use • Complement to KSA1010 TO-220 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted 1.Base 2.Collector Parameter 3.Emitter Symbol VCBO Collector-Base Voltage Value
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KSC2334
KSA1010
O-220
PW300
Cycle10%
KSC2334
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FJB3307D
Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
FJB3307D
QS 100 NPN Transistor
transistor Electronic ballast
electronic ballast circuit
US Global Sat
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Untitled
Abstract: No abstract text available
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
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FJP3307D
Abstract: electronic ballast with npn transistor
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram
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FJP3307D
FJP3307D
O-220
electronic ballast with npn transistor
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Untitled
Abstract: No abstract text available
Text: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings
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FJB3307D
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BDW93
Abstract: BDW93C BDW94 BDW94A BDW94B BDW94C
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted
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BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
BDW94/C
BDW94
BDW94A
BDW94B
BDW94C
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Untitled
Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector 3.Emitter Ta = 25°C unless otherwise noted
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BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
BDW94/C
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Untitled
Abstract: No abstract text available
Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector
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BDW94/C
BDW94/C
BDW93
BDW93C
O-220
BDW94
BDW94C
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bu406 cross
Abstract: BU406TU
Text: BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage
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BU406/406H/408
O-220
bu406 cross
BU406TU
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trace code TO-220
Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram
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FJP3307D
FJP3307D
O-220
FJP3307DH1
FJP3307DH1TU
FJP3307DH2
FJP3307DH2TU
FJP3307DTU
trace code TO-220
J3307D-1
SWITCH IC
J3307
transistor Electronic ballast
3307D
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ZHD100
Abstract: zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected motor driver full bridge 10A 100V MH88615 ZDT1048 MOULDED BRIDGES ic siren
Text: Application Note 24 Issue 2 January 1996 An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry. The requirements on the component
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OT223
100mA
100ms
100us
100mV
ZHD100
zetex t1048
SM-8 Package
T1048
pnp npn dual emitter connected
motor driver full bridge 10A 100V
MH88615
ZDT1048
MOULDED BRIDGES
ic siren
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage
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BU406/406H/408
O-220
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POWER TRANSISTOR Cross
Abstract: No abstract text available
Text: KSD362 KSD362 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD362
O-220
POWER TRANSISTOR Cross
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Untitled
Abstract: No abstract text available
Text: BU406/406H/408 NPN Epitaxial Silicon Transistor Features • High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector TC = 25°C unless otherwise noted Parameter VCBO VCEO Collector-Base Voltage
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BU406/406H/408
O-220
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Untitled
Abstract: No abstract text available
Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted
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O-220F
FJPF13007
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Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter
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TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
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KSA1010OTU
Abstract: No abstract text available
Text: KSA1010 KSA1010 High Speed High Voltage Switching • Industrial Use • Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSA1010
KSC2334
O-220
PW300
Cycle10%
Characteristic220
KSA1010OTU
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FJPF13007
Abstract: electronic ballast with npn transistor
Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220F 2.Collector 3.Emitter TC = 25°C unless otherwise noted
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O-220F
FJPF13007
electronic ballast with npn transistor
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Untitled
Abstract: No abstract text available
Text: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter
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TIP140T/141T/142T
TIP145T/146T/147T
O-220
TIP140T
TIP141T
TIP142T
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