2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor fp 1016
Abstract: BFQ34T ON4497 FP 801 UBB361
Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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ON4497)
BFQ34T
transistor fp 1016
BFQ34T
ON4497
FP 801
UBB361
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ZXTN
Abstract: TS16949 ZXTN5551G ZXTP5401G 5551 transistor
Text: ZXTN5551G 160V, SOT223, NPN high voltage transistor Summary BVCEO > 160V BVEBO > 6V IC cont = 600mA PD = 2W Complementary part number ZXTP5401G Description C A high voltage NPN transistor in a high power dissipation surface mount package B Features • 160V rating
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ZXTN5551G
OT223,
600mA
ZXTP5401G
OT223
ZXTN5551GTA
ZXTN5551GTC
D-81541
ZXTN
TS16949
ZXTN5551G
ZXTP5401G
5551 transistor
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon High-Voltage Transistor B F 622 • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 623 PNP Type Marking Ordering Code
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Q62702-F1052
OT-89
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Darlington transistor T7 27
Abstract: Samsung s3 mpsa25 p 605 transistor equivalent R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
Text: SAMSUNG SEMICONDUCTOR INC MPSA25 14E O Jj TTbMlMt? 0007355 O | NPN EPITAXIAL - T ^ SILICON DARLINGTON TRANSISTOR DARLINGTON TRANSISTOR • Collector-Emltter Voltage: Vc*»=40V • Collector Dissipation: Pc max =625mW A B SO LU TE MAXIMUM RATINGS (T,=25°C)
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MPSA25
625mW
Darlington transistor T7 27
Samsung s3
mpsa25
p 605 transistor equivalent
R/Detector/"detect18 ic"/"CD"/TB 2929 Ho
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Z7 DIODE
Abstract: Diode RJ 4B KT234510 bipolar power transistor vce 600 volt 100a bipolar transistor 300 volt 5 ampere transistor
Text: POÜJEREX INC m *lñ tm w D E |7H 'ì4 b a i K DGD2D3H D | r " - 2 > 3 '2 .'J KT234510 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412)925-7272 S p l Í t mD U 3 ¡ B í p O l S t Transistor Module 100 Am peres/600 Volts Description Powerex Split-Dual Bipolar Transistor
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0002Q3H
-r-33~
KT234510
Amperes/600
KT234510
Z7 DIODE
Diode RJ 4B
bipolar power transistor vce 600 volt
100a bipolar transistor
300 volt 5 ampere transistor
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BLW90
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the
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BLW90
OT122A
BLW90
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Untitled
Abstract: No abstract text available
Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction
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FMMT591
500mW
FMMT491
FMMT591TA
D-81541
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FMMT591TA
Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction
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FMMT591
500mW
FMMT491
FMMT591TA
D-81541
FMMT591TA
design ideas
FMMT591 ZETEX
FMMT591
TS16949
FMMT491
buy 1a 60v pnp
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SOT89 52 10A
Abstract: Marking P93 sot89 FCX593 FMMT493 TS16949
Text: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO
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FCX593
FMMT493
D-81541
SOT89 52 10A
Marking P93 sot89
FCX593
FMMT493
TS16949
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Untitled
Abstract: No abstract text available
Text: FCX593 SOT89 Silicon planar high voltage transistor Complementary part number - FMMT493 C Device marking - P93 B E E C C B Pinout - top view Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO
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FCX593
FMMT493
D-81541
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FMMT597
Abstract: FMMT497 TS16949
Text: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage
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FMMT497
FMMT597
D-81541
FMMT597
FMMT497
TS16949
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FMMT497
Abstract: FMMT597 TS16949
Text: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage
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FMMT497
FMMT597
D-81541
FMMT497
FMMT597
TS16949
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LC100A
Abstract: No abstract text available
Text: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor
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00D2Q3S
KT234510
Amperes/600
KT234510
peres/600
LC100A
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pnp transistor 1000v
Abstract: TS665 FMMT596 FMMT596TA TS16949 PNP 1000V 100a
Text: FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size inches Tape width (mm Quantity per reel 7 8 3,000 FMMT596TA Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit
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FMMT596
FMMT596TA
D-81541
pnp transistor 1000v
TS665
FMMT596
FMMT596TA
TS16949
PNP 1000V 100a
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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Untitled
Abstract: No abstract text available
Text: NPN Silicon High Voltage Transistor BF 622 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: B F 623 PNP Type Marking Ordering code for versions in bulk Ordering code lor
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Q62702-F568
Q62702-F1052
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors b b 5 3 ^ 31 DDSTEm M il H A P X UHF power transistor BLV194 bTE D — — AUER PHILIPS/DISCRETE FEATURES • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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BLV194
MRC099
MRC097
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CD 1691 CB
Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
Text: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking
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F1218
OT-23
CD 1691 CB
CM 1241 siemens
R193L
cd 1191 cb
transistor rf cm 1104
F1218
Transistor BFR 559
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diode sy 710
Abstract: sy 710 diode transistor buz 90 transistor buz 350 buz90
Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vbs 600 V b 4.5 A ^DS on Package Ordering Code 1 .6 « TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S1321-A2
D5155
diode sy 710
sy 710 diode
transistor buz 90
transistor buz 350
buz90
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Untitled
Abstract: No abstract text available
Text: S IE M E N S PNP Silicon BF 623 High-Voltage Transistor • Suitable for video output stages in T V sets • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: B F 622 NPN Type Marking Ordering Code
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Q62702-F1053
OT-89
D121bÃ
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F bflE D • b 3 b ? S S H DGiöfiB? SSb ■ MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES RDS(on) = °-80 OHM
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cr122
340F-03
O-247)
O-251)
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transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Text: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
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flE35b05
T0119.
q62701-f87
y12bl
transistor d 1556
d 1556 transistor
transistor af 126
AF279S
transistor 1555
UHF pnp transistor
AF279
PNP UHF transistor
AF 279
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SOT89 52 10A
Abstract: FCX495 TS16949 marking N95
Text: FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt VCEO • 1 Amp continuous current E C C Device marking B N95 Pinout - top view Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
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FCX495
D-81541
SOT89 52 10A
FCX495
TS16949
marking N95
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