2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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TRANSISTOR BC 206 PNP
Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V
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MDC03
TRANSISTOR BC 206 PNP
Transistor BhD
Transistor BhD 15
bc 201 transistor
A 1908 transistor
SA 5881
eltec
R/transistor bc 813
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK543-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK543-100A/B
BUK543
-100A
-100B
-SOT186
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification POwerMOS transistor BUK543-100A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.
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BUK543-100A/B
BUK543
-100B
PINNING-SOT186
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized
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BLW60C
nsforFigs16and17:
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BFQ 42 transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES
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BF0251
BFQ251
MSB033
125102/00/04/pp8
BFQ 42 transistor
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s484
Abstract: 7481A
Text: TYPES SN5481A, SNS484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES n i MSI B U L L E T IN NO . DL-S 7 2 1 15 8 1. D E C E M B E R 1972 description Each of these 16-bit active-element memories is a high-speed, m onolithic, transistor-transistor-logic SN6481A . . . J OR W PACKAGE
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SN5481A,
SNS484A.
SN7481A.
SN7484A
16-BIT
SN5484,
s484
7481A
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Philips film capacitors 27 pf
Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized
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BLW60C
00b35b2
7Z772S6
7Z77255
Philips film capacitors 27 pf
trimmer 3-30 pf
TL 2222
BLW60C
Philips film capacitors polystyrene
b32s
philips carbon film resistor
z670
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8 pin ic lm 745
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.
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BF588
BF585
BF587.
MBH792
115002/00/03/pp8
8 pin ic lm 745
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> bb53^31 D O Sm ^Q ^12 IAPX BLW 90 Jl U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f, range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
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bb53T31
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Untitled
Abstract: No abstract text available
Text: TTL MSI TYPES SN548ÎA, SN5484A. SN7481A. SN7484A 16-BIT RANDOM-ACCESS MEMORIES B U L L E T I N N O . D L -S 7 2 1 1 5 8 1 , D E C E M B E R 1 9 7 2 description Each o f these 16-bit active-element memories is a high-speed, m o n o lith ic, transistor-transistor-logic
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SN548
SN5484A.
SN7481A.
SN7484A
16-BIT
SN5481,
SN7481,
SN5484,
SN7484,
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PDF
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BFR95
Abstract: No abstract text available
Text: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.
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bbS3T31
0031flflM
BFR95
BFR95
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Philips polystyrene capacitors
Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
Text: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW76
7z77457
Philips polystyrene capacitors
wf vqe 13 E
WF VQE 13
WF VQE 23 E
WF VQE 14 A6
WF VQE 21 e ad
transistors ai 757
wf vqe 21 f ad
WF VQE 22 d
WF vqe 13 D
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L382
Abstract: BUL381 L381 BUL382 BULK381 BULK382 lb 385 IC circuit diagram tl 382
Text: S G S -T H O M S O N M G M IIL IO T « ! b u l 381/ b u l 382 B U LK 381/B U L K 382 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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LK381IB
ULK382
BUL381,
BUL382,
BULK381
BULK382
BUL381/382
BULK381/382
OT-82
L382
BUL381
L381
BUL382
lb 385 IC circuit diagram
tl 382
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relais statique
Abstract: SGC12006 SGC20420 SGC22006 Celduc Relais IS3030 TRANSISTOR BIPOLAIRE
Text: 04/94 SGC RELAIS STATIQUE POUR COURANT CONTINU DC SOLID STATE RELAY 20 A 60 ou lor 200 VDC Sortie transistor bipolaire Haut tension B ipolar transistor output H igh voltage Les relais SGC sont des relais statiques de puissance pour courant continu . Ces relais permettent la commutation de charges conti
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200VDC
20AmpÃ
SGC12006
SGC22006
SGC20420
relais statique
Celduc Relais
IS3030
TRANSISTOR BIPOLAIRE
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BCR198
Abstract: KTY 120
Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C
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47kil)
Q62702-C2266
OT-23
BCR198
KTY 120
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n5460
Abstract: 2N5460 N5462 P-Channel JFETs 2n5462 2N5461 CONFIGURATION 2N5461 Philips MBB
Text: Philips Semiconductors VllOflEb DDbflCHl b'ìS • PHIN Data sheet status Prelim inary specifica tio n date of issue O cto b e r 1990 DESCRIPTION P-channel silicon junction fie ld -e ffe ct transistor in a TO-92 plastic envelope. It is intended fo r use as an
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2N5460/5461/5462
7110fl2ti
N5460/5461/5462
2N5460
2N5461
N5462
2N5462
n5460
P-Channel JFETs
CONFIGURATION 2N5461
Philips MBB
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att A m plifier Transistor BDC01D NPN Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS R ating C ollector-E m itter Voltage Symbol BDC01D Vdc Unit V C EO 100 C o llecto r-B ase Voltage VCBO 100 Vdc E m itte r-B a s e Voltage
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BDC01D
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Untitled
Abstract: No abstract text available
Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.
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2SC3636
VCC-200V
T03PB
4227KI/3095KI/N174KI
0Q2DB57
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TRANSISTOR C 2577
Abstract: transistor A62
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector
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PRF957
OT323
AM062
/printrun/ed/pp14
TRANSISTOR C 2577
transistor A62
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SG 2058
Abstract: transistor A62
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector
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PRF947
OT323
MAM062
/printrun/ed/pp14
SG 2058
transistor A62
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PDF
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MARKING CODE 24
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification
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PDTC114TE
PDTC114TE
115104/00/02/pp8
MARKING CODE 24
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification
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PDTC123JE
SC-75
115104/00/02/pp8
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PDF
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J5603D
Abstract: FJI5603DTU MH 7404 200H FJI5603D
Text: FJI5603D NPN Silicon Transistor Applications Equivalent Circuit • High Voltage and High Speed Power Switch Application • Electronic Ballast Application C Features B • Wide Safe Operating Area • Small Variance in Storage Time • Built-in Free Wheeling Diode
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FJI5603D
FJI5603D
J5603D
FJI5603DTU
MH 7404
200H
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