TRANSISTOR B 834 Search Results

TRANSISTOR B 834 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR B 834 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
TRANSISTOR BC 206 PNP Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813 Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V	OCR Scan	MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813	PDF
BFQ 42 transistor Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES	OCR Scan	BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor	PDF
BLW 82 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and	OCR Scan	bb53T31 BLW 82	PDF
8 pin ic lm 745 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.	OCR Scan	BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745	PDF
BFQ295 Abstract: BFQ296 Text: Philip^emiçonductore ^ b b 5 3 T 31 Q0317flfl b 37 W A P X Prelim inary specification PNP HDTV video transistor BFQ295 N AUER FEA TU R ES PHILIPS/DISCRETE b^E PINNING PIN • High breakdown voltages • Low output capacitance 1 emitter DESCRIPTION • High gain bandwidth product	OCR Scan	bb53T31 BFQ295 BFQ296. BFQ295 OT128B OT128B. BFQ296	PDF
431202036640 choke Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit Text: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and	OCR Scan	BLW85 QQb3357 431202036640 choke CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
BC869 Abstract: BC869-10 BC869-16 BC869-25 Text: • bbsa'm □Q24Mt15 m N AMER PHILIPS/DISCRETE ■ APX BC869 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic m icrom iniature envelope, intended fo r low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio o u tp u t	OCR Scan	BC869 BC868/BC869 BC869 BC869-10 BC869-16 BC869-25	PDF
BUZ 835 Abstract: No abstract text available Text: SIEMENS BUZ 307 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated BUZ 307 CO Type 800 V b 3A ^bs on 3 Í1 Package Ordering Code TO-218AA C67078-S3100-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 7C = 35 °C	OCR Scan	O-218AA C67078-S3100-A2 O-218AA BUZ 835	PDF
LA 7693 Abstract: ic CD 4047 7737 transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain	OCR Scan	2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor	PDF
TRANSISTOR C 2577 Abstract: transistor A62 Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector	OCR Scan	PRF957 OT323 AM062 /printrun/ed/pp14 TRANSISTOR C 2577 transistor A62	PDF
SG 2058 Abstract: transistor A62 Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF947 FEATURES PINNING - SOT323 • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector	OCR Scan	PRF947 OT323 MAM062 /printrun/ed/pp14 SG 2058 transistor A62	PDF
MARKING CODE 24 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDTC114TE PDTC114TE 115104/00/02/pp8 MARKING CODE 24	PDF

Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BDL32 PNP BISS transistor Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS PHILIPS Philips Semiconductors Product specification	OCR Scan	BDL32 BDL32 OT223 BDL31f 135106/00/03/pp8	PDF
transistor bf 968 Abstract: No abstract text available Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O	Original	NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BCR 108 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kQ, R2=47k£2 Type Marking Ordering Code Pin Configuration BCR 108 WHs 1= B Q62702-C2253 Package 2=E 3=C SOT-23	OCR Scan	Q62702-C2253 OT-23 0120b7fl 235b05	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs	OCR Scan	125002/00/03/pp12	PDF
014e1 Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018	PDF
Untitled Abstract: No abstract text available Text: 2SA1834 2SC5001 Transistors DC-DC converter Low V ce (sat) Transistor (— 20V, — 10A ) 2S A 1834 ^ A b s o lu te m a x im u m ra tin g s (T a = 2 5 "C ) •F e a tu re s 1 ) Low Vce(Mi). ( T y p .-0 .1 6 V at Ic/I b= — 4V /— 50m A) 2 ) High current capacity. ( Ic = — 10A/DC> — 15A/10m s pulse)	OCR Scan	2SA1834 2SC5001 5A/10m	PDF
BFQ295 Abstract: BFQ296 sot128b Text: Preliminary specification Philips Semiconductors PNP HDTV video transistor '7 ^ 3 3 5bE T> PH IL IP S I N T E R N A T I O N A L FEATURES • BFQ295 7110fl2b DD M5 b ? 7 132 ■ P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance	OCR Scan	BFQ295 711002b BFQ296. BFQ295 OT128B OT128B. BFQ296 sot128b	PDF
mje 1303 Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X	PDF
mje 1303 Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE	Original	NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000	PDF
kec kta Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068 Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)	OCR Scan	382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068	PDF

TRANSISTOR B 834 Search Results

TRANSISTOR B 834 Result Highlights (5)

TRANSISTOR B 834 Datasheets Context Search

2sb504

TRANSISTOR BC 206 PNP

BFQ 42 transistor

BLW 82

8 pin ic lm 745

BFQ295

431202036640 choke

transistor BF 697

BC869

BUZ 835

LA 7693

TRANSISTOR C 2577

SG 2058

MARKING CODE 24

Untitled

transistor bf 968

Untitled

Untitled

014e1

Untitled

BFQ295

mje 1303

mje 1303

kec kta