TRANSISTOR B A O 331 Search Results

TRANSISTOR B A O 331 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR B A O 331 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HF 331 transistor Abstract: No abstract text available Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and	OCR Scan	BLY92A HF 331 transistor	PDF
Untitled Abstract: No abstract text available Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.	OCR Scan	0Q247fll BFG17A OT143.	PDF
Untitled Abstract: No abstract text available Text: GaAs IRED & PHOTO-TRANSISTOR TLP631,632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H I B A TLP631 and T L P632 consist of a p h o t o-transistor o p t i c a l l y coupled to a g a l l i u m arse n i d e infrared emitting d i o d e in	OCR Scan	TLP631 TLP632 E67349 TLP631	PDF
npn transistor dc 558 Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22 Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ22S BFQ24. bb53c131 DD3151S BFQ22S npn transistor dc 558 transistor dc 558 npn BFQ24 Transistor 5331 BFQ22	PDF
3004x Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55 Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna	OCR Scan	BFX55 BFX55 Q60206-X55 50ff1A 3004x antenna amplifiers Transistor BFX 25 63310-A Q60206-X55	PDF
J295 Abstract: BU705 BU705D Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency	OCR Scan	711QfiHt. BU705 BU705D T-33-P OT93A BU705D BU705D) J295 BU705	PDF
J119 transistor Abstract: enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104 Text: Ph » \|P ^ « n jicon ducto» ^ ^ bfc,53^ 3 1 D DB^ fiM b M APX Product specification HF power MOS transistor BLF145 N AUER PHILIPS/DISCRETE FEATURES b^E D PIN C O N F IG U R A T IO N • High pow er gain • Low noise figure • G o o d therm al stability	OCR Scan	BLF145 OT123 -SOT123 7Z31SOS. 9-j14 5-j14 J119 transistor enamelled copper wire tables 4312 020 36640 BLF145 SSB transmitter 222285247104	PDF
2SC3844 Abstract: 374171 reo4 Text: FUJ I TS U M I C R O E L E C T R O N I C S 31E D a 374R7b5 G01bb2b b S F M I T-33 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SC3844 Silicon High Speed Power Transistor 2S C 3844 4 5 0 V , 15A A B S O L U T E M A X IM U M R A T IN G S Parameter Storage Tem perature Range	OCR Scan	374R7b5 2SC3844 2SC3844 200jiH -450V 374171 reo4	PDF
Untitled Abstract: No abstract text available Text: S IL IC O N M O N O L IT H IC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT TD62504P-H 7eh SINGLE DRIVER : C O M M O N EMITTRER Th e T D 6 2 5 0 4 P -H is com prised o f seven o r five N PN Transistor Arrays. A p p lic a tio n s include relay, ham m er, lam p a n d disp lay	OCR Scan	TD62504P-H IP16-P -300A 50//S,	PDF
GK transistor 42 Abstract: transistor FET cd 332 m Text: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G	OCR Scan	MT-42 012inch) GK transistor 42 transistor FET cd 332 m	PDF
bd142 Abstract: No abstract text available Text: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves	OCR Scan	BD142 M3D2S71 92CSH2M7K1 23C6RI 92CS-12326RI	PDF
MRF2016M Abstract: MRF201 MRF2016 Text: 12E D £ b3b?254 ÜOflñGSa 4 \| MOT ORC LA SC MOTOROLA "33-11 XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF2016M T h e R F L in e 16 W 2 GHz M IC R O W A V E POW ER T R A N S IS T O R NPN SILICON MICROWAVE POWER TRANSISTOR N P N S IL IC O N . . . d esign ed for C la ss B and C com m on b a se broadband am plifier	OCR Scan	MRF2016M MRF2016M MRF201 MRF2016	PDF
transistor B A O 331 Abstract: transistor P 0.2 V D F 331 TRANSISTOR Text: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO P O W E R AM PLIFIER DC TO DC CO N VER TER • High Current Capability • High Power Dissipation» Complement to KSB817 A B S O L U T E MAXIMUM RATIN GS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage	OCR Scan	KSD1047 KSB817 transistor B A O 331 transistor P 0.2 V D F 331 TRANSISTOR	PDF
BSP108 Abstract: transistor marking ST4 Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended	OCR Scan	BSP108 OT223 BSP108 transistor marking ST4	PDF

CA3046 equivalent Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S Text: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input	OCR Scan	CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S	PDF
transistor BC 331 Abstract: BC 331 Transistor bc 331 BC182 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182 Text: BC182 BC 183 BC 184 NPN SILICON TRANSISTOR, EPITAXIAL P LA N A R T R A N S IS T O R N P N S ILIC IU M , P L A N A R E P IT A X IA L Compì, of BC 212, BC 213, BC 214 H Preferred device D isp o sitif recommandé - Low noise preamplifier Préamplificateurs faible b ruit	OCR Scan	BC182 CB-76 V240-500 BC183C-BC184C 300tit 200/xA transistor BC 331 BC 331 Transistor bc 331 BC184 bc 184 transistor h21e BC183 transistor BC 55 transistor bc 182	PDF
a331j Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to	OCR Scan	MRF6404 a331j	PDF
transistor B A O 331 Abstract: mje340 equivalent d 331 TRANSISTOR equivalent Text: ¡S A M S U N G S E M IC O N D U C T O R I N C MJE340 14E 0 J \| 7cl b tl l i f S 000770D fl NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350	OCR Scan	MJE340 MJE350 0QG77fe transistor B A O 331 mje340 equivalent d 331 TRANSISTOR equivalent	PDF
TBA331 Abstract: transistor d 331 VBE3-VBE41 d 331 Transistor D F 331 TRANSISTOR transistor 331 C 331 Transistor transistor h 331 331 transistor transistor d 331 data Text: 07 D \| s G S-THOMSON 0 7 E D I\| 7 ^^22^ 23377 0 0 1 1 3 Q Ó7C 1 7 0 3 1 fi D T -V 5 -2 S -1 TBA331 LINEAR INTEGRATED CIRCUITS G ENERAL PURPOSE TRANSISTOR A R R A Y T h e T B A 3 3 1 is an arra y o f 5 m o n o lith ic N P N tra n sisto rs in a 14 -le a d d ua l in -lin e plastic package. T w o	OCR Scan	00113Q7 TBA331 14-lead TBA331 transistor d 331 VBE3-VBE41 d 331 Transistor D F 331 TRANSISTOR transistor 331 C 331 Transistor transistor h 331 331 transistor transistor d 331 data	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC KSD5001 1ME 0 \| 0007b3fl 7 NPN t r i p l e d if f u s e d PLANAR SILICON TRANSISTOR T -3 3 -t 3 C O LO R T V HORIZONTAL O U TPU T A PPLICA TIO N S DAMPER DIODE BUILT IN HIGH Collector-Base Voltage’ V«o=1500V A B S O LU T E MAXIMUM RATINGS (Ta= 2 5 ° C)	OCR Scan	0007b3fl KSD5001 0QG77fe	PDF
transistor A4t 45 Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15 Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e	OCR Scan	O-220 C67078-A1307-A3 023Sfc 0535bOS transistor A4t 45 transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15	PDF
DF 331 TRANSISTOR Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF\|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S	OCR Scan	0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
p626 Abstract: IC P626 TLP626-1 Text: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled	OCR Scan	TLP626 TLP626, p626 IC P626 TLP626-1	PDF

TRANSISTOR B A O 331 Search Results

TRANSISTOR B A O 331 Result Highlights (5)

TRANSISTOR B A O 331 Datasheets Context Search

HF 331 transistor

Untitled

Untitled

npn transistor dc 558

3004x

J295

J119 transistor

2SC3844

Untitled

GK transistor 42

bd142

MRF2016M

transistor B A O 331

BSP108

CA3046 equivalent

transistor BC 331

a331j

transistor B A O 331

TBA331

Untitled

transistor A4t 45

DF 331 TRANSISTOR

CT 1975 sam

p626