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    TRANSISTOR B100 Search Results

    TRANSISTOR B100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    USE OF TRANSISTOR

    Abstract: Marquardt Switches transistor model list
    Text: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the


    Original     		PDF

    74als power consumption

    Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
    Text: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low


    Original     		PDF

    b1009 transistor

    Abstract: B1009 ba656 ba9700-series BA6566
    Text: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more


    Original     		BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF BA9700AFV 470kHz) BU8874lBU8874F BU8874 BU8874F 03iOl b1009 transistor B1009 ba656 ba9700-series BA6566 PDF

    PF5102 equivalent

    Abstract: National "Audio Handbook" LM194 lm114 National AN-222 C1995 LM114/PF5102 equivalent LM118 PF5102
    Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool yet have received less and less attention over the last few years This is primarily due to the proliferation of highperformance monolithic circuits which are replacing many


    Original     		PDF

    IR2121

    Abstract: MOSFET IR2121 Transistor b103 104X111 B-93 MP150 IGBT Designers Manual CURRENT LIMITING LOW SIDE DRIVER
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current


    Original     		IR2121 IR2121 B-105 MOSFET IR2121 Transistor b103 104X111 B-93 MP150 IGBT Designers Manual CURRENT LIMITING LOW SIDE DRIVER PDF

    IR2121

    Abstract: IR2121 equivalent DOWNLOAD ir2121 B-93 MP150 IGBT Designers Manual MOSFET IR2121
    Text: Data Sheet No. PD-6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven power transistor current n Error lead indicates fault conditions and programs


    Original     		IR2121 IR2121 B-105 IR2121 equivalent DOWNLOAD ir2121 B-93 MP150 IGBT Designers Manual MOSFET IR2121 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    IN6006

    Abstract: JU003
    Text: 2DI100D-050 iooa < 7 — ï ± / ; u : O utline D rawings POWER TRANSISTOR MODULE F e a tu re s • 7 U —jfc-f y ' s W ' i • hFEJ^Bv,' • — KrtJK Including Free Wheeling Diode High DC Current Gain Insulated Type : A pplications "/"f-'s*? HigH Power Switching


    OCR Scan     		2DI100D-050 E82988 5388-76B0 l95t/R89 IN6006 JU003 PDF

    Transistor 2sc1915

    Abstract: 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B
    Text: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		2SC1940 2SC1941 2SC1951 150pS Transistor 2sc1915 2SC1951 2SC1586 2SC1915 2SC1762 2SC1811 2SC1584 2SC1940 Tbb 38 138B PDF

    PCB Rogers RO4003

    Abstract: No abstract text available
    Text: 17.0-27.0 GHz GaAs MMIC Surface Mount Buffer Amplifier B1001P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 19.0 dB Small Signal Gain 3.5 dB Noise Figure


    Original     		B1001P1 01-May-02 XB1001 PCB Rogers RO4003 PDF

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS PDF

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF PDF

    B1001

    Abstract: XB1001 XP1000 XU1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000 PDF

    B1000

    Abstract: Mimix xb1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		10-May-03 B1000 MIL-STD-883 Mimix xb1000 PDF

    B1007-QT

    Abstract: No abstract text available
    Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing


    Original     		06-Jun-07 B1007-QT B1007-QT PDF

    B1008-QT

    Abstract: XB1008-QT
    Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias


    Original     		B1008-QT 12-Sep-07 B1008-QT XB1008-QT PDF

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965 PDF

    B1002

    Abstract: 84-1LMI XB1002 OC 140 germanium transistor b1002 100
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 July 2001 - Rev 7/27/01 Features 36.0-43.0 GHz Frequency Range 25.0 dB Typical Small Signal Gain 4.0 dB Typical Noise Figure +14 dBm Typical Compression Point Operates at +3.0 to +5.5 VDC 2.90 mm X 1.50 mm Die Size


    Original     		B1002 MIL-STD-883 B1002 84-1LMI XB1002 OC 140 germanium transistor b1002 100 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT October 2009 - Rev 10-Oct-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias


    Original     		B1007-QT 10-Oct-09 XB1007-QT PDF

    B1002

    Abstract: XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 June 2002 - Rev 26-Jun-02 Features Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 25.0 dB Small Signal Gain 4.0 dB Noise Figure +14 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		B1002 26-Jun-02 MIL-STD-883 B1002 XP1001 OC 140 germanium transistor pHEMT transistor MTBF 84-1LMI XB1002 XU1001 b1002 100 PDF

    XB1008-QT-0G0T

    Abstract: B1008-QT XB1008-QT XB1008-QT-0G00 XB1008-QT-EV1
    Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT August 2008 - Rev 17-Aug-08 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias


    Original     		B1008-QT 17-Aug-08 XB1008-QT XB1008-QT-0G0T B1008-QT XB1008-QT-0G00 XB1008-QT-EV1 PDF

    XB1007-QT

    Abstract: B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10
    Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +19.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias


    Original     		B1007-QT 13-Mar-10 XB1007-QT B1007 XB1007-QT-0G0T XB1007-QT-EV1 B1007-QT XB1007-QT-0G00 13-Mar-10 PDF

    R300 diodes

    Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
    Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias


    Original     		B1002 01-Apr-05 MIL-STD-883 R300 diodes b1002 100 XP1001 B1002 XB1002 XU1001 PDF

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF