TRANSISTOR BA RW Search Results

TRANSISTOR BA RW Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR BA RW Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2945 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F	OCR Scan	2SC2954 2SC2954 2SC2945	PDF
bc337 Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840 Text: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C	OCR Scan	BC337 BC338) BC338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840	PDF
transistor ba 752 Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t	OCR Scan		PDF
Transistor 9012 ax Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012 Text: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge	Original	S9013 500mA 625mW 100MHz 100mA Transistor 9012 ax transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.	OCR Scan	2SC3582 2SC3582	PDF
Untitled Abstract: No abstract text available Text: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c	OCR Scan	O-92MOD 2SA966 1501c	PDF
transistor DK qj Abstract: JKS-45 SE-49 Text: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @	OCR Scan	PWS10 CycleS50 010i-flIDUlrNi-No transistor DK qj JKS-45 SE-49	PDF
CW 7805 H Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3031 The RF Line UHF P o w er Transistor T h e TP3031 is d e s ig n e d fo r 960 M H z ba se s ta tio n s in b o th a n a lo g a n d d ig ita l a p p lic a tio n s . It in c o rp o ra te s h ig h v a lu e e m itte r b a lla s t re s is to rs , g o ld m e ta lliz a tio n s a n d o ffe r s a	OCR Scan	TP3031 TP3031 CW 7805 H	PDF
BA12003 Abstract: transistor BA RW BA12004 transistor ba EL20M Text: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required	OCR Scan	BA12001, BA12002, BA12003, BA12004 DIP16 DIP16) BA12003 transistor BA RW transistor ba EL20M	PDF
IC 555 timer monostable Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable Text: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.	OCR Scan	ML-H-3S510/109A KIL-M-38510/109 MIL-M-38510. MIL-M-36510 IC 555 timer monostable timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable	PDF
transistor BA RW Abstract: No abstract text available Text: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.	OCR Scan	BC817W; BC818W MBC67 OT323 17-40W transistor BA RW	PDF
cbic-v Abstract: NV231A01 pv-231 AO1011 ALA110 pnp 8 transistor array ax pm hf ne TRANSISTOR ba 751 BL8024 Text: Preliminary Data Sheet May 1996 m ic ro e le c tro n ic s group Lucent Technologies Bell Labs Innovations ALA110 VHF Semicustom Linear Array Features Description • High-speed CBIC process 10.2 GHz NPN, 4.3 GHz PNP The ALA110 Semicustom Linear Array is an Integrated	OCR Scan	ALA110 PV432AG1 PV432A NV663A01 NV663A 005002b 00277T1 cbic-v NV231A01 pv-231 AO1011 pnp 8 transistor array ax pm hf ne TRANSISTOR ba 751 BL8024	PDF
2N174A Abstract: 2n174 Text: .,” un.s.195cu/113 26 JmurY 1565 !a-iwlg Smxncmm Kn.rrA.w SEXIWHLUCIOR DEVICE, ‘lllAK5151WR, Pm, Cmu.mw, mm- TYFE 2i17bA 1. 5c@PE 1.1 k. Thin w.eclric.tl.n tmr,iatnr and in in aocordanco cover. tbs detail rewiwta for a kigh+rxer, FIP germrdum with IUL-.5-195O3 except ● n oWAE*	Original	195cu/113 lllAK5151WR, 2i17bA 5-195O3 EIL4-19X0 WA-19X -195m 2N174A 2n174	PDF
qm15td-9b Abstract: QM15TD-9 transistor BA RW Text: MITSUBISHI TRANSISTOR MODULES QM 15TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QMÎ5TD-9B 15A 500V 250 I i APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders	OCR Scan	15TD-9B QM15TD-9B qm15td-9b QM15TD-9 transistor BA RW	PDF

TRANSISTOR D400 Abstract: D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent Text: S9015 P NP EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Applica tion TO- 92 Collector Curre nt Ic=-100mA Collector P owe r Dissipa tion P c=450mW Comple me ntary to S9014 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol	Original	S9015 -100mA 450mW S9014 TRANSISTOR D400 D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent	PDF
PNP marking NY sot-223 Abstract: 13004-v LDO marking code AL transistor 9005 Text: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent	OCR Scan	TS9005 600mA T-223 PNP marking NY sot-223 13004-v LDO marking code AL transistor 9005	PDF
MG1200FXF1US53 Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a Text: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT	Original	MG1200FXF1US53 25degC) MG1200FXF1US53 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a	PDF
2n2907 pnp Abstract: 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP MPQ6502 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906 Text: Central Sem iconductor Corp. Central Sem iconductor Corp. central sem iconductor Corp. 1 I 1 1 M P Q 6501 M P Q 6502 C OM PLEMENTARY QUAD T R A N SISTOR ♦I JEDEC T O - 116 CASE 145 Adam s Avenue Hauppauge, New York 11 788 D ESCRIPTION The CENTRAL S EM ICONDUCTOR M P Q 6 5 0 1 , MPQ6502, types are comprised of four independent	OCR Scan	MPQ6501 MPQ6502 O-116 MPQ6501, MPQ6502, 2N2221 MPQ6502 2N2222 2N2906 2n2907 pnp 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906	PDF
Untitled Abstract: No abstract text available Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors	OCR Scan	BLS2731 SC19a BLS2731-20 OT445C i25io8/oo/o3/P	PDF
Untitled Abstract: No abstract text available Text: WWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS624530 Single Darlington Transistor Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol KS624530 Units Ti	OCR Scan	KS624530 Amperes/600	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .	OCR Scan	BDP32 OT223	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm	OCR Scan	MP4005	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750	OCR Scan	QM400HA-2HB E80276 E80271	PDF
2SC5446 Abstract: No abstract text available Text: T O SH IB A TENTATIVE 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2 SC 5 4 4 6 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • High Voltage	OCR Scan	2SC5446 2SC5446	PDF

TRANSISTOR BA RW Search Results

TRANSISTOR BA RW Result Highlights (5)

TRANSISTOR BA RW Datasheets Context Search

2SC2945

bc337

transistor ba 752

Transistor 9012 ax

Untitled

Untitled

transistor DK qj

CW 7805 H

BA12003

IC 555 timer monostable

transistor BA RW

cbic-v

2N174A

qm15td-9b

TRANSISTOR D400

PNP marking NY sot-223

MG1200FXF1US53

2n2907 pnp

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2SC5446