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    TRANSISTOR BC 239 F Search Results

    TRANSISTOR BC 239 F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC 239 F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR 237b

    Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


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    BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b PDF

    TRANSISTOR 237b

    Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


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    BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237 PDF

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs PDF

    AOI21

    Abstract: OAI22 32X72 equivalent to TRANSISTOR BC 187 ao21 AN1521 low noise transistor bc 179 OMPAC wirebond die flag lead frame using NAND gate construct an inverter
    Text: Order this Data Sheet by H4CP/D MOTOROLA SEMICONDUCTOR H4CPlus SERIES TECHNICAL DATA Product Data Sheet H4CPlus SERIES CMOS ARRAYS The new H4CPlus Series arrays feature new 3.3V, 5V and mixed-voltage capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew


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    j 13007-2

    Abstract: UPD6250C diode 1d4h PD75206 PD75212ACW-XXX PD75208CW-XXX PD75216A uPD7500* instruction set UPD75206 uPD75P216A
    Text: CHAPTER 1 GENERAL DESCRIPTION CHAPTER 1 GENERAL DESCRIPTION The µPD75206, 75208, 75212A, 76216A, and 75P216A are each a single chip microcomputer which contains FIP Fluorescent Indicator Panel controller/driver, watch timer, timer/pulse generator which can output 14-bit


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    PD75206, 5212A, 6216A, 75P216A 14-bit PD75P216A j 13007-2 UPD6250C diode 1d4h PD75206 PD75212ACW-XXX PD75208CW-XXX PD75216A uPD7500* instruction set UPD75206 uPD75P216A PDF

    HL-00

    Abstract: 75P3018 IC-9016 uPD753012 uPD753012A uPD753016 uPD753016A uPD753017 uPD753017A uPD75P3018
    Text: mPD753017 4-BIT SINGLE-CHIP MICROCONTROLLER m PD753012 m PD753012A m PD753016 m PD753016A m PD753017 m PD753017A m PD75P3018 m PD75P3018A 1994 Document No. U11282EJ2V0UM00 Previous No. IEU-1425 Date Published June 1995 P Printed in Japan NOTES FOR CMOS DEVICES


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    mPD753017 PD753012 PD753012A PD753016 PD753016A PD753017 PD753017A PD75P3018 PD75P3018A U11282EJ2V0UM00 HL-00 75P3018 IC-9016 uPD753012 uPD753012A uPD753016 uPD753016A uPD753017 uPD753017A uPD75P3018 PDF

    EB 203 D

    Abstract: No abstract text available
    Text: User’s Manual µ PD753036 4-Bit Single-chip Microcontrollers µ PD753036 µ PD75P3036 Document No. U10201EJ2V4UM00 2nd edition Date Published April 2003 N CP(K) c Printed in Japan [MEMO] User’s Manual U10201EJ2V4UM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS


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    PD753036 PD75P3036 U10201EJ2V4UM00 EB 203 D PDF

    uPD750008

    Abstract: uPD75008 uPD750104 uPD750106 uPD750108 uPD75P0116 uPD75008 instruction set
    Text: USER'S MANUAL µPD750108 4 BIT SINGLE-CHIP MICROCOMPUTER PRELIMINARY µPD750104 µPD750106 µPD750108 µPD75P0116 Document No. U11330EJ1V0UM00 (1st edition) Date Published July 1996 P Printed in Japan 1996 [MEMO] GENERAL 1 PIN FUNCTIONS 2 FEATURES OF THE ARCHITECTURE AND MEMORY MAP


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    PD750108 PD750104 PD750106 PD75P0116 U11330EJ1V0UM00 PD75008, PD750108, PD750108 uPD750008 uPD75008 uPD750104 uPD750106 uPD750108 uPD75P0116 uPD75008 instruction set PDF

    404RP

    Abstract: TRANSISTOR BC 137
    Text: User's Manual µPD753017A 4-Bit Single-Chip Microcontrollers µPD753012A µPD753016A µPD753017A µPD75P3018A Document No. U11282EJ3V0UM00 3rd edition Date Published March 2003 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U11282EJ3V0UM NOTES FOR CMOS DEVICES


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    PD753017A PD753012A PD753016A PD75P3018A U11282EJ3V0UM00 U11282EJ3V0UM 404RP TRANSISTOR BC 137 PDF

    bc 357 transistor

    Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
    Text: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver


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    CB-76 bc 357 transistor transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC PDF

    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Text: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung PDF

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N PDF

    C 548 B

    Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
    Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and


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    Q62702-C687 Q62702-C687-V3 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V3 Q62702-C688-V1 Q62702-C688-V2 Q6270 200Hz C 548 B B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548 PDF

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


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    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


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    lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 PDF

    TIP 29 transistor

    Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
    Text: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature


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    TIP32, T1P32A, TIP32B. TIP32C TIP31, TIP31A, TIP31B, TIP31C TIP32 TIP32A TIP 29 transistor TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor PDF

    transistor BC 339

    Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
    Text: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification Supersedes data of 1997 May 26 File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS PHILIPS Philips Semiconductors Product specification


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    BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    bpx28

    Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
    Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten


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    WJA79

    Abstract: WJA7 transistor BC 388
    Text: WJ-A79 / SMA79 5 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE: +114 dB/1 MHz HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +36 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings


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    WJ-A79 SMA79 WJA79 WJA7 transistor BC 388 PDF

    k3882

    Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
    Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d


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