TRANSISTOR BC337 NPN Search Results

TRANSISTOR BC337 NPN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR BC337 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC337 Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES	Original	M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips	PDF
BC337 Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16 Text: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range	Original	BC337/338 BC337 BC338, BC338 BC337 BC338 TRANSISTOR BC337-25 bc337 transistor datasheet BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16	PDF
BC337 Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J	Original	BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Emitter Voltage	OCR Scan	BC337/338 BC337/BC328 BC337 BC338	PDF
bc337 transistor datasheet Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338 Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage	Original	BC337/338 BC337/BC328 BC337 BC338 BC338 bc337 transistor datasheet transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337	PDF
OF TRANSISTOR BC337 Abstract: bc337 fairchild BC337 BC338 Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC337 bc337 fairchild BC337 BC338	PDF
Untitled Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30	Original	BC337 BC338, BC338 BC337 BC338 100mA	PDF
OF TRANSISTOR BC338 Abstract: BC33825TA BC338 Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC338 BC33825TA	PDF
bc337 Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor	PDF
BC337 Abstract: bc337 fairchild BC338 Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC338	PDF
BC337 Abstract: bc337 fairchild BC338 Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC338	PDF
BC33740BU Abstract: bc338 npn bc338 signal transistor bc337 fairchild BC338N Text: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC33840TA BC33740BU npn bc338 signal transistor bc337 fairchild BC338N	PDF
BC337 figure Abstract: BC337 NPN transistor datasheet transistor bc337 npn BC337 BC337 equivalent Equivalent for BC337 bc337 transistor datasheet TO-92 NPN CBO 40V CEO 25V EBO 5V BC327 NPN transistor datasheet NPN general purpose transistor BC337 Text: BC337/BC338 NPN General Purpose Transistor COLLECTOR P b Lead Pb -Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25°C unless otherwise noted) Symbol BC337 BC338 Unit Collector-Base voltage VCBO 50 30 V Collector-Emitter voltage VCEO 45 25 V Emitter-Base voltage	Original	BC337/BC338 BC337 BC338 29-Jun-06 270TYP 30-Jun-06 BC337 figure BC337 NPN transistor datasheet transistor bc337 npn BC337 BC337 equivalent Equivalent for BC337 bc337 transistor datasheet TO-92 NPN CBO 40V CEO 25V EBO 5V BC327 NPN transistor datasheet NPN general purpose transistor BC337	PDF
transistor 835 Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649 Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558	OCR Scan	BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649	PDF

BC33x Abstract: No abstract text available Text: BC337…BC338-16/25/40 NPN Transistor TO-92 Small Signal Product Features ◇For switching and AF amplifier applications ◇These types are subdivided into three groups -16, -25 and -40, according to their DC current gain ◇Moisture sensitivity level 1 ◇Driver transistor	Original	BC337â BC338-16/25/40 MIL-STD-202, BC337-16/25/40 BC33x	PDF
BC337 Abstract: BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter	Original	BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC338 BC338 TRANSISTOR BC337 NPN transistor BC337 hfe BC338-40 TRANSISTOR BC338 BC338-16 bc337 transistor BC-337	PDF
BC327 45V 800mA PNP Transistor Abstract: BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=-800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=-1V, Ic=-100mA . ᴌFor Complementary with NPN type BC337.	Original	BC327 -800mA. -100mA) BC337. BC327 45V 800mA PNP Transistor BC337 45V 800mA NPN Transistor transistor bc337 datasheet BC327 BC337 BC327 800mA PNP Transistor	PDF
bc337 Abstract: BC338-25 BC338 BC327 NPN transistor Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector Emitter Voltage	OCR Scan	BC337/338 BC327/BC328 BC337 BC338 BC337, bc337 BC338-25 BC338 BC327 NPN transistor	PDF
Untitled Abstract: No abstract text available Text: BC337 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. “ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Suitable For AF-Driver Stages And Low Power Output Stages * Complement To Bc327 ABSOLUTE MAXIMUM RATINGS at Tamb-25°C	OCR Scan	BC337 Bc327 Tamb-25Â 100uA 100mA Ic-300mA 500mA 300mA 50MHz	PDF
BC327 Abstract: BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor Text: SEMICONDUCTOR TECHNICAL DATA BC327 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC337.	OCR Scan	BC327 -800mA. -100mA) BC337. BC327 BC337 BC327 W 75 BC327 transistor BC337 45V 800mA NPN Transistor	PDF
BC337 45V 800mA NPN Transistor Abstract: BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337 Text: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ᴌHigh Current : IC=800mA. ᴌDC Current Gain : hFE=100ᴕ630 VCE=1V, Ic=100mA . ᴌFor Complementary with PNP type BC327.	Original	BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC337 45V 800mA BC337 pnp transistor datasheet transistor bc337 datasheet BC327 BC337	PDF
Untitled Abstract: No abstract text available Text: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage	OCR Scan	BC337/338 BC327/BC328 BC337 BC338 100mA 300mA	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage	Original	BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA,	PDF
BC337 npn Abstract: transistor bc337 datasheet BC337 BC33 Text: DC COMPONENTS CO., LTD. BC337 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter	Original	BC337 500mA, 300mA, 100mA, 100MHz BC337 npn transistor bc337 datasheet BC337 BC33	PDF

TRANSISTOR BC337 NPN Search Results

TRANSISTOR BC337 NPN Result Highlights (5)

TRANSISTOR BC337 NPN Datasheets Context Search

BC337

BC337

BC337

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bc337 transistor datasheet

OF TRANSISTOR BC337

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OF TRANSISTOR BC338

bc337

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BC33740BU

BC337 figure

transistor 835

BC33x

BC337

BC327 45V 800mA PNP Transistor

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BC327

BC337 45V 800mA NPN Transistor

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BC337 npn