TRANSISTOR BD 180 Search Results

TRANSISTOR BD 180 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR BD 180 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905	PDF
transistor BD 110 Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524 Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal	OCR Scan	fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
Untitled Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage	OCR Scan	BD176/178/180 BD176 BD178 BD180 BD176 BD178	PDF
transistor bd176 Abstract: bd178 bd180 E434 Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45	OCR Scan	BD176/178/180 O-126 BD176 BD178 BD180 150mA 250mA transistor bd176 bd178 bd180 E434	PDF
TRANSISTOR 431 Abstract: transistor 431 c BD177 Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively VABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Symbol : BD175 : BD177 Rating VcBO : BD179 Collector Emitter Voltage	OCR Scan	BD175/177/179 BD175 BD177 BD179 BD179 300uS, 150mA 250mA TRANSISTOR 431 transistor 431 c BD177	PDF
bd175 Abstract: bd177 Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO	Original	BD175/177/179 O-126 BD175 BD177 BD179 BD179 bd175 bd177	PDF
BD178 Abstract: BD176 BD180 transistor bd176 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180 transistor bd176	PDF
BD175 Abstract: No abstract text available Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD175/177/179 O-126 BD175 BD177 BD179 BD179 BD175	PDF
transistor bd176 Abstract: BD176 BD178 BD180 transistor BD 325 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 transistor bd176 BD176 BD178 BD180 transistor BD 325	PDF
equivalent bd177 Abstract: BD175 BD177 BD179 Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD175/177/179 O-126 BD175 BD177 BD179 equivalent bd177 BD175 BD177 BD179	PDF
BD176 Abstract: transistor bd176 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 BD180 BD176 transistor bd176	PDF
BD178 Abstract: BD176 BD180 Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180	PDF
Untitled Abstract: No abstract text available Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	BD176/178/180 O-126 BD176 BD178 BD180 BD180	PDF

transistor bd 180 Abstract: BD transistor BD 176 transistor bd176 Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol ’ C ollector Base Voltage : BD176 : BD178 C ollector E m itter Voltage	OCR Scan	BD176/178/180 transistor bd 180 BD transistor BD 176 transistor bd176	PDF
Untitled Abstract: No abstract text available Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ’ C ollector Base V oltage Sym bol Rating Unit 45 V : BD177 60 V : BD179	OCR Scan	BD175/177/179 BD177 BD179 BD175 300ns,	PDF
Untitled Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ’ C ollector Base V oltage Sym bol Rating Unit - 45 V - 60 V - 80 V - 45	OCR Scan	BD176/178/180 BD178 BD180 BD176	PDF
BD transistor Abstract: BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80	OCR Scan	BD175/177/179 100mA, 150mA 250mA 300ns, BD transistor BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD	PDF
42t sot-23 Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715	PDF
transistor D 2394 Abstract: f173 fp302 Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.	OCR Scan	FP302 FP302 2SC4520 SB05-05CP, 470//F transistor D 2394 f173	PDF
transistor SE 431 Abstract: No abstract text available Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem en t to B D 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a se V o lta g e Sym bol : BD176 Rating Unit	OCR Scan	BD176/178/180 BD176 BD178 transistor SE 431	PDF
Untitled Abstract: No abstract text available Text: Rev.4.0_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57	PDF
ic 8355 Abstract: 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2 Text: Rev.4.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 ic 8355 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2	PDF
Untitled Abstract: No abstract text available Text: Rev.2.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM	Original	S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57	PDF

TRANSISTOR BD 180 Search Results

TRANSISTOR BD 180 Result Highlights (5)

TRANSISTOR BD 180 Datasheets Context Search

BDX 241

transistor BD 110

pin configuration transistor bd140

Untitled

transistor bd176

TRANSISTOR 431

bd175

BD178

BD175

transistor bd176

equivalent bd177

BD176

BD178

Untitled

transistor bd 180

Untitled

Untitled

BD transistor

42t sot-23

transistor D 2394

transistor SE 431

Untitled

ic 8355

Untitled