TRANSISTOR BD 680 Search Results

TRANSISTOR BD 680 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR BD 680 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BD681 Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V	OCR Scan	BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 BD681 bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR	PDF
Untitled Abstract: No abstract text available Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD677A	OCR Scan	BD675A/677A/679A/681 BD676A, BD678A, BD677A BD679A BD675A BD681	PDF
BD682 Abstract: BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A BD679A Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD 677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage	OCR Scan	BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 BD682 BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A	PDF
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136	PDF
Untitled Abstract: No abstract text available Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD678A	OCR Scan	BD676A/678A/680A/682 BD675A, BD677A, BD681 BD678A BD680A BD676A BD682	PDF
st bd681 transistor Abstract: power transistor bd Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD675A, BD677A, BD679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e	OCR Scan	BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 O-126 BD678A BD682 /678A /680A st bd681 transistor power transistor bd	PDF
transistor BD 680 Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137 Text: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors	OCR Scan	Type00 BD680 fi23SbOS transistor BD 680 transistor BD 677 bd678 TRANSISTOR Bd 137	PDF
transistor BD 680 Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243 Text: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors	OCR Scan	0235bQ5 T-33-31 676/BD BD676, BD678 BD680 BO676, BD678, transistor BD 680 bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243	PDF
D679A Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc	OCR Scan	BD675, BD676, 7677A BD679 BD681 D679A BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670	PDF
BD876 Abstract: transistor BD 680 BD878 BD660 BD876A LTA 703 S BD676 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Silicon PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica tions. • High DC Current Gain — hpE = 750 Min @ lc - 1.5 and 2.0 Adc • Monolithic Construction	OCR Scan	BD676, BD675, BD676 BD676A BD678 BD678A BD876 transistor BD 680 BD878 BD660 BD876A LTA 703 S	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
transistor BD 677 Abstract: BD 675 BD675 677d Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington	OCR Scan	T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d	PDF
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan		PDF
BO677 Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242 Text: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington	OCR Scan	023SbOS T-33-29 BD676, BD677 a23Sb0S ooo43Ra BD675 AKTIENGESELLSCHAF-BD679 BD67S, BO677 transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242	PDF

BT66T-19L Abstract: BT66T pin configuration NPN transistor c945 NPN BT66T-02L SImple Melody Generator SImple Melody Generator bt66t12l BT66T19L bt66 melody generator SImple Melody Generator bt66t19l Text: BT66T SIMPLE MELODY GENERATOR FEATURES * One shot or level hold mode * Plays a melody consisting of 64 note * RC oscillator on chip * 64-note ROM memory * Sound range : 2 octaves * Tempo : 15 kinds presto-largo * Direct piezo drive * Solution of automatic stop or repeat of the melody	OCR Scan	BT66T 64-note BT66T-19L BT66T-02L BT66T-08L BT66T-12L BT66T-68L 1500X1000 110X110 BT66T pin configuration NPN transistor c945 NPN SImple Melody Generator SImple Melody Generator bt66t12l BT66T19L bt66 melody generator SImple Melody Generator bt66t19l	PDF
PTGL09BD3R3N2B51B0 Abstract: pth resistor pth posistor pTH murata Murata PTH Text: R90E6.pdf 04.3.1 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF catalog	Original	R90E6 24/32V DC24V PTGL09BD3R3N2B51B0 pth resistor pth posistor pTH murata Murata PTH	PDF
D675A Abstract: d679a Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica	OCR Scan	BD675/D BD675, BD676, O-225AA D675A d679a	PDF
D675A Abstract: d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica	OCR Scan	BD675/D BD675, BD676, O-225AA D675A d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE	PDF
um3166 Abstract: No abstract text available Text: UNITED MI CR OELE C T R ON I C S TE D Ë J ‘ïBESfllE ODQDSbb 1 9 3 25812 UNITED MICR O E L E C T R O N I C S 92D 00566 LJlYiO D U M 3166AG r -1 o ; Simple Melody Generator Features • 64-note ROM memory ■ Direct piezo drive ■ 1.3V to 3.3V power supply and low power consumption	OCR Scan	3166AG 64-note UM3166AG UM3166AG UM3166AG1 UM3166AG2 UM3166AG3 UM3166AG4 UM3166AG5 um3166	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58	PDF
230V ac to 5V dc usb charger circuit Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5	Original	ACT36X, ACT33X 2012-Octâ ACT365-02 EPC17) 85-264Vac 2200mA 230V ac to 5V dc usb charger circuit D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
PTH8L14ar3r3m Abstract: PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61 Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal	Original	CG01-J PTH8L14ar3r3m PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61	PDF
transistor BD 522 Abstract: PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265 Text: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal	Original	CG01-H transistor BD 522 PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265	PDF

TRANSISTOR BD 680 Search Results

TRANSISTOR BD 680 Result Highlights (5)

TRANSISTOR BD 680 Datasheets Context Search

BD681

Untitled

BD682

pin configuration transistor bd140

Untitled

st bd681 transistor

transistor BD 680

transistor BD 680

D679A

BD876

bc 540

transistor BD 677

transistor kt 326

BO677

BT66T-19L

PTGL09BD3R3N2B51B0

D675A

D675A

um3166

D 5038 Transistor Horizontal

230V ac to 5V dc usb charger circuit

2sb504

PTH8L14ar3r3m

transistor BD 522