Untitled
Abstract: No abstract text available
Text: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417
|
Original
|
BF416
BF418
-25mA)
-250V
-300V
70MHz
O-126-
CB-16
|
PDF
|
bf417
Abstract: Bf 417 g transistor
Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418
|
Original
|
BF415
BF417
JO-126-
CB-16
bf417
Bf 417 g transistor
|
PDF
|
BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti
|
OCR Scan
|
BF180
BF180
s21b
BF180 TRANSISTOR
s parametres
s22b
bf 180
CE 470 10V
J BF180
MAX S21B
est 504
|
PDF
|
bf579
Abstract: No abstract text available
Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion
|
OCR Scan
|
Q62702-F971
OT-23
0B3Sb05
B235b05
bf579
|
PDF
|
marking code g1s
Abstract: Q62702-F1129 D 998 TRANSISTOR
Text: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO
|
Original
|
Q62702-F1129
OT-143
marking code g1s
Q62702-F1129
D 998 TRANSISTOR
|
PDF
|
marking code g1s
Abstract: Q62702-F1771 VPS05178 marking G2s
Text: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771
|
Original
|
Q62702-F1771
VPS05178
OT-143
marking code g1s
Q62702-F1771
VPS05178
marking G2s
|
PDF
|
BF998
Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
Text: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129
|
Original
|
Q62702-F1129
OT-143
BF998
marking code GL
Q62702-F1129
d 998 transistor circuit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23
|
OCR Scan
|
Q62702-F1042
OT-23
S35hDS
fl235bDS
|
PDF
|
s22b
Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Text: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili
|
OCR Scan
|
BF181
s22b
bf181
s21b
b 514 transistor
bf 181
bf181 transistor
ic s21b
J BF181
MAX S21B
|
PDF
|
TFK 840
Abstract: BF167 TRANSISTOR tfk 840 TFK 105 A1187 AMB-45
Text: BF 167 Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am plifier stages in com m on em itter configuration Besondere Merkmale: Features:
|
OCR Scan
|
|
PDF
|
BFR93
Abstract: bfr93a R93A
Text: BFR93 BFR93A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R93 R1 BFR93A R2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,
|
Original
|
BFR93
BFR93A
OT-23
bfr93a
R93A
|
PDF
|
BFR92
Abstract: BFR92A BFR92 transistor transistor p2 marking
Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,
|
Original
|
BFR92
BFR92A
OT-23
BFR92A
BFR92 transistor
transistor p2 marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BF 770A NPN Silicon RF Transistor F eature • For IF am p lifiers in T V -sa t tuners and for VC R m odulators E S D : E le ctro sta tic d isch a rg e sensitive device, o b se rve handling p recautions! T yp e ^ M arking j BF 770 A ' IS O rd erin g C o d e
|
OCR Scan
|
|
PDF
|
transistor bc 7-40
Abstract: No abstract text available
Text: <£&ml- lon£Luctoi tPicxLct}., fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON PLANAR EPITAXIAL THANSISTOB BF 173 THE BP173 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR
|
Original
|
BP173
200mA
35MHz
transistor bc 7-40
|
PDF
|
|
2SA1527
Abstract: 9600M
Text: 2SA1527 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 6.115a BF 370.0 NF 999.0m VAF 54.0 IKF 960.0m ISE 1.50p NE 2.00 BR 30.0 NR 1.00 VAR 30.0 IKR 30.90m R1 5.50k Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB
|
Original
|
2SA1527
27deg
2SA1527
9600M
|
PDF
|
BF199
Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor
|
Original
|
M3D186
BF199
SCA55
117047/00/02/pp8
BF199
BF 234 transistor
BP317
data bf199
transistor NPN BF199
|
PDF
|
BF506
Abstract: No abstract text available
Text: leiizu ^E.mi-C-ondu.cko'i O^ioaueti, Una. CX !_/ TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BF506 FAX: (973) 376-8960 SILICON PLANAR PNP VHP OSCILLATOR MIXER The BF 506 is a silicon planar epitaxial PNP transistor in Jedec TO-92 plastic package.
|
Original
|
BF506
BF506
|
PDF
|
2sd1048
Abstract: 5620P BR 101 Transistor 450nr 2200F
Text: 2SD1048 SPICE PARAMETER NPN SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 220.0f BF 370.0 NF 1.01 VAF 25.0 IKF 590.0m ISE 90.00f NE 1.50 BR 45.0 NR 1.00 VAR 20.0 IKR 100.9m Unit Parameter Value Unit A ISC NC RB IRB RBM RE RC XTB EG XTI 5.620p
|
Original
|
2SD1048
27deg
2sd1048
5620P
BR 101 Transistor
450nr
2200F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking
|
OCR Scan
|
Q62702-F944
OT-23
fl23SbDS
00bb7fi
EHTG7054
|
PDF
|
k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Text: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
|
Original
|
VPS05178
OT-143
Res00
EHT07305
EHT07306
Oct-26-1999
k d 998 0
transistor BF 998
998 transistor
bf998
EHT0730
VPS05178
BF 998
|
PDF
|
J3005
Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages
|
OCR Scan
|
569-GS
J3005
BF311
transistor BF 37
transistor marking ra
marking code YA Transistor
U16020
|
PDF
|
gummel
Abstract: TRANSISTOR 1F 2SC3649
Text: 2SC3649 SPICE PARAMETER SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 375.4f 200.8 BF 999.8m NF 4 VAF IKF 288.2m ISE 326.1f 1.479 NE 50 BR NR 1 VAR 49 IKR 30.00m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 500.0p 2
|
Original
|
2SC3649
27deg
gummel
TRANSISTOR 1F
2SC3649
|
PDF
|
d 998 transistor circuit
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998
|
OCR Scan
|
Q62702-F1129
T-143
M27ol
BB5151
J8B515
d 998 transistor circuit
|
PDF
|
zq 405-MF
Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
23b320
BFP193
62702-F
OT-143
zq 405-MF
siemens 30 090
GP 819
SAA 1006
saa 1070
|
PDF
|