TRANSISTOR BF 459 Search Results

TRANSISTOR BF 459 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BF 459 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 1249 Abstract: UPA800T 1788 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR	Original	UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788	PDF
NF NPN Silicon Power transistor TO-3 Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz	Original	UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor	PDF
transistor bf 458 Abstract: NE685 S21E UPA806T UPA806T-T1 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1	Original	UPA806T NE685 UPA806T 24-Hour transistor bf 458 S21E UPA806T-T1	PDF
431 transistor Abstract: BJT IC Vce NE AND micro-X 2SC5433 NE681 NE681M03 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE681M03 NE681M03 NE681 c8e-12 12e-9 10e-9 2e-12 4e-12 24-Hour 431 transistor BJT IC Vce NE AND micro-X 2SC5433 S21E	PDF
NE681M03 Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE681M03 NE681M03 NE681 m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 S21E 2SC543	PDF
transistor KF 507 Abstract: 2SC5435 NE685 NE685M03 S21E bjt microwave 15 GHz npn transistor BF 507 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE685M03 NE685M03 transistor KF 507 2SC5435 NE685 S21E bjt microwave 15 GHz npn transistor BF 507	PDF
m03 transistor Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:	Original	NE680M03 NE680M03 24-Hour m03 transistor NE AND micro-X nec 08e 2SC5434 NE680 S21E BF179 bjt npn m03 low noise transistor bF 179	PDF
S21E Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350	PDF
bjt microwave 15 GHz npn Abstract: 2SC5436 NE687 NE687M03 S21E transistor 1038 BF-104 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE687M03 NE687M03 687M03 26e-12 19e-12 08e-12 12e-9 10e-9 bjt microwave 15 GHz npn 2SC5436 NE687 S21E transistor 1038 BF-104	PDF
bjt npn m03 Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03	Original	NE688M03 NE688M03 24-Hour bjt npn m03 BR 123 m03 bjt npn 2SC5437 NE688 S21E	PDF
transistor MJE -1103 Abstract: NE AND micro-X 2SC5432 NE856 NE856M03 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE856M03 NE856M03 transistor MJE -1103 NE AND micro-X 2SC5432 NE856 S21E	PDF
MARKING rks Abstract: BFR949F transistor bf 186 Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	BFR949F EHA07524 Jan-04-2002 MARKING rks BFR949F transistor bf 186	PDF
LOT CODE NE NEC Abstract: nec 08e 2SC5434 NE680 NE680M03 S21E nec manufacture year bf179 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	Original	NE680M03 NE680M03 LOT CODE NE NEC nec 08e 2SC5434 NE680 S21E nec manufacture year bf179	PDF
Transistor B C 458 Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458 Text: BF 457 BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature	OCR Scan	BF459sont Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458	PDF

transistor S104 Abstract: c 458 c transistor TRANSISTOR 2SC 458 Transistor B C 458 transistor c 458 s104 transistor BF458 transistor bf 458 S104 transistor 458 Text: 25C D • aZBSbOS 00044^5 T H S I E 6 ' r - i/ '- Z 'J BF 457 BF 458 BF 459 NPN Silicon RF Transistors SIEMENS A K TI EN GE SE LL SCH AF n.5 C 04495 fo r video and AF o u tp u t stages 6F 457, BF 458 and BF 459 are epitaxial NPN silicon planar transistors in TO 126 plastic	OCR Scan	-BF459 Q62702-F315 Q62702-F316 Q62702-F317 Q62902-B62 Q62902-B63 25mii. l23Sfe BF457 BF458 transistor S104 c 458 c transistor TRANSISTOR 2SC 458 Transistor B C 458 transistor c 458 s104 transistor BF458 transistor bf 458 S104 transistor 458	PDF
ULN2003NA Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P Text: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series \|T r a n s i s t o r \| [ A r r a y ] \|DM O S\| T r a n s i s t o r \|A r r a y \| — Multi-Chip — Module	OCR Scan	TD62M TD62C TD/TB62 N29B3a 54S63PA 54597p 54598PÜ 2786A UDN2580a ULN2003NA transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P	PDF
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan		PDF
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan		PDF
BF298 Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457	PDF
TRANSISTOR 131-6 BJ 946 Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise	OCR Scan	B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16	PDF
APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700	PDF
NF NPN Silicon Power transistor TO-3 Abstract: transistor bf 458 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package PACKAGE O UTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2.1 ± 0.1	OCR Scan	NE685 UPA806T UPA806T 24-Hour NF NPN Silicon Power transistor TO-3 transistor bf 458	PDF
bjt npn m03 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS um ts in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: pi • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	NE681M03 NE681M03 NE681 4e-12 24-Hour bjt npn m03	PDF
NEC 1357 Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357 Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	NE688M03 NE688M03 24-Hour NEC 1357 1357 transistor NEC nec transistor 1357 transistor NEC 1357	PDF

TRANSISTOR BF 459 Search Results

TRANSISTOR BF 459 Result Highlights (5)

TRANSISTOR BF 459 Datasheets Context Search

transistor 1249

NF NPN Silicon Power transistor TO-3

transistor bf 458

431 transistor

NE681M03

transistor KF 507

m03 transistor

S21E

bjt microwave 15 GHz npn

bjt npn m03

transistor MJE -1103

MARKING rks

LOT CODE NE NEC

Transistor B C 458

transistor S104

ULN2003NA

3866S

catalogue des transistors bipolaires de puissance

BF298

TRANSISTOR 131-6 BJ 946

APC UPS CIRCUIT DIAGRAM rs 1500

NF NPN Silicon Power transistor TO-3

bjt npn m03

NEC 1357