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    TRANSISTOR BFR 900MHZ Search Results

    TRANSISTOR BFR 900MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BFR 900MHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR106

    Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
    Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor PDF

    BFR106

    Abstract: 2I k
    Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		OT-23 Q62702-F1219 BFR106 900MHz BFR106 2I k PDF

    Transistor BFr 99

    Abstract: No abstract text available
    Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99 PDF

    BFr pnp transistor

    Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
    Text: BFR 106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR 35AP NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking


    Original     		VPS05161 OT-23 900MHz Nov-30-2000 PDF

    VSO05561

    Abstract: Transistor BFR 30
    Text: BFR 93AW NPN Silicon RF Transistor 3  For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93AW


    Original     		VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 30 PDF

    BFR194

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194 PDF

    sot-23 rks

    Abstract: marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration
    Text: BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		OT-23 Q62702-F1346 900MHz Dec-13-1996 sot-23 rks marking code RKS transistors transistor bf 194 NF 841 pcb antenna 1356 Q62702-F1346 bf 194 pin configuration PDF

    marking 93A

    Abstract: BFR93A transistor marking R2s
    Text: BFR 93A NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 93A R2s Pin Configuration


    Original     		VPS05161 OT-23 900MHz Oct-13-1999 marking 93A BFR93A transistor marking R2s PDF

    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412 PDF

    TS 11178

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1346 OT-23 B535bQ5 BFR194 900MHz TS 11178 PDF

    transistor marking R2s

    Abstract: AMI siemens BFR93AW k150t
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1489 OT-323 900MHz transistor marking R2s AMI siemens BFR93AW k150t PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz Q62702-F1314 OT-23 BFR181 PDF

    marking 93A

    Abstract: transistor marking code 1325 b 11061
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1316 OT-23 BFR183 900MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz OT-323 Q62702-F1490 PDF

    Q62702-F1490

    Abstract: No abstract text available
    Text: BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		900MHz OT-323 Q62702-F1490 Dec-11-1996 Q62702-F1490 PDF

    Q62702-F1296

    Abstract: No abstract text available
    Text: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		900MHz OT-23 Q62702-F1296 Feb-04-1997 Q62702-F1296 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		900MHz Q62702-F1492 OT-323 IS211 PDF

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF PDF

    BFR 182 transistor

    Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
    Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1315 Sep-04-1996 BFR 182 transistor Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315 PDF

    Q62702-F1314

    Abstract: No abstract text available
    Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1314 Dec-11-1996 Q62702-F1314 PDF

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fj = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		900MHz Q62702-F1490 OT-323 Q122Q7M flE35bG5 D122G75 PDF