TRANSISTOR BFT 65 Search Results

TRANSISTOR BFT 65 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BFT 65 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
30227 Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 Text: BFT 92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s	Original	VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23	PDF
Transistor BFT 98 Abstract: Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w Text: BFT 92W PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92W NPN 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92W W1s	Original	VSO05561 OT-323 900MHz Oct-25-1999 Transistor BFT 98 Transistor BFR 900mhz 75167 BFt 65 infineon marking W1s RF NPN POWER TRANSISTOR C 10-12 GHZ 30227 Transistor BFT 10 GHz PNP transistor bft92w	PDF
Transistor BFT 93 Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93 Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package	Original	OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93	PDF
Transistor BFT 92W Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681 Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Original	OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681	PDF
30227 Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23 Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Original	OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23	PDF
marking p1S Abstract: Q62702-F1488 GMA marking Text: BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-323 Q62702-F1488 900MHz Dec-10-1996 marking p1S Q62702-F1488 GMA marking	PDF
BCR108W Abstract: BFR92W E6327 VSO05561 Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92W VSO05561 OT323 BCR108W BFR92W E6327 VSO05561	PDF
E 94733 Abstract: No abstract text available Text: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92P VPS05161 150cal E 94733	PDF
Untitled Abstract: No abstract text available Text: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92P VPS05161 150cal	PDF
BFR92W Abstract: VSO05561 marking p1S Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92W VSO05561 OT323 900MHz Aug-03-2001 BFR92W VSO05561 marking p1S	PDF
BFR92P Abstract: 011v1 Text: BFR92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92P VPS05161 900MHz Aug-03-2001 BFR92P 011v1	PDF
Untitled Abstract: No abstract text available Text: BFR92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR92W VSO05561 OT323	PDF
BFr pnp transistor Abstract: No abstract text available Text: BFR 92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05161 OT-23 900MHz Oct-13-1999 BFr pnp transistor	PDF
VSO05561 Abstract: Transistor BFR 14 Text: BFR 92W NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92W PNP 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 14	PDF

Transistor BFT 42 Abstract: VSO05561 Text: BFR 92W 3 NPN Silicon RF Transistor For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA 2 Complementary type BFT 92 PNP 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VSO05561 OT-323 900MHz Nov-30-2000 Transistor BFT 42 VSO05561	PDF
BFr pnp transistor Abstract: SC-75 BFT92T Text: BFR 92T NPN Silicon RF Transistor Preliminary data 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA Complementary type: BFT 92T PNP 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05996 SC-75 900MHz Oct-13-1999 BFr pnp transistor SC-75 BFT92T	PDF
Transistor BFT 10 Abstract: transistor 3Ft bux c 651 emetteur 3ft73 Text: BFT 72 3FT 73 BFT 74 NPN SILICON TRANSISTOR, PLANAR T R AN SISTO R N P N SILIC IU M , P L A N A R BFT 72, BFT 73 and B FT 74 are plastic encapsulated transistor designed for video output stages in black and white and color T V receivers. These transistors feature	OCR Scan	74sont Transistor BFT 10 transistor 3Ft bux c 651 emetteur 3ft73	PDF
BFT65 Abstract: transistor bft65 f451 61 SIEMENS 25813 Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration	OCR Scan	BFT65 BFT65 Q62702-F451 fl235bDS transistor bft65 f451 61 SIEMENS 25813	PDF
Transistor BFT 96 Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884 Text: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain	OCR Scan	q0q532q 0484E1 ft-11 569-GS 000s154 hal66 if-11 Transistor BFT 96 bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884	PDF
E 94733 Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6 Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1488 OT-323 900MHz E 94733 p1S SOT-89 BFr pnp transistor SPICE 2G6	PDF
Untitled Abstract: No abstract text available Text: BSE D • Ô23fc»320 0 0 1 7 0 ^ PNP Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS ñ H SIP BFT 93 _ *'" " _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN .	OCR Scan	OT-23 23b320 BFT93	PDF
2N3055 RCA Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A	OCR Scan	lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N3055 RCA RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410	PDF
RCA transistor 40410 Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410	PDF
rca 40410 Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA	PDF

TRANSISTOR BFT 65 Search Results

TRANSISTOR BFT 65 Result Highlights (5)

TRANSISTOR BFT 65 Datasheets Context Search

30227

Transistor BFT 98

Transistor BFT 93

Transistor BFT 92W

30227

marking p1S

BCR108W

E 94733

Untitled

BFR92W

BFR92P

Untitled

BFr pnp transistor

VSO05561

Transistor BFT 42

BFr pnp transistor

Transistor BFT 10

BFT65

Transistor BFT 96

E 94733

Untitled

2N3055 RCA

RCA transistor 40410

rca 40410