BFX34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
-65ny
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BFX34
Abstract: DSASW003743
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
DSASW003743
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bfx34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
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BFX34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
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BFX34
Abstract: No abstract text available
Text: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at
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BFX34
BFX34
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BFX30
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor BFX30
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M3D111
BFX30
MAM334
SCA54
117047/00/02/pp8
BFX30
BP317
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2108 npn transistor
Abstract: BFX34 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34
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M3D111
BFX34
MAM317
SCA54
117047/00/02/pp8
2108 npn transistor
BFX34
BP317
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transistor BFX85
Abstract: BFX85 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX85 NPN switching transistor Product specification Supersedes data of Sepember 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX85
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M3D111
BFX85
MAM317
SCA54
117047/00/02/pp8
transistor BFX85
BFX85
BP317
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Untitled
Abstract: No abstract text available
Text: HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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BFX34
870mW
O-205AD)
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BFX34
Abstract: transistor bfx34 BFX34 DATASHEET LE17
Text: HIGH CURRENT GENERAL PURPOSE TRANSISTOR BFX34 • Silicon Epitaxial NPN Transistor • High Speed, Low Saturation Switch • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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BFX34
870mW
O-205AD)
BFX34
transistor bfx34
BFX34 DATASHEET
LE17
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BFX85
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX85
C-120
BFX85Rev310701
BFX85
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX85 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX85
C-120
BFX85Rev310701
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bfx84
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX84 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX84
C-120
BFX84Rev310701
bfx84
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BFX84
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BFX84 TO-39 Metal Can Package AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO
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BFX84
C-120
BFX84Rev310701
BFX84
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D ISÌ S IIL[1CTISÌ ÌD©S BFX34 SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPN transistor in JedecTO -39 metal case, intented for high current applications.
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BFX34
BFX34
P008B
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BFX62
Abstract: Transistor BFX 25 Transistor BFX 4 Transistor BFX
Text: BFX62 NPN Transistor for amplifier and oscillator stages up to 1 GHz BFX 62 is an NPN silicon planar transistor in a case 18A 4 DIN 41876 TO-72 . The leads are insulated from the case. The transistor is particularly suitable for amplifier and oscillator stages at frequencies up to 1 GHz.
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BFX62
Q60206-X
-C12e
BFX62
Transistor BFX 25
Transistor BFX 4
Transistor BFX
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
2JS41W
BFX89
Transistor BFX 90
BFX 514
Q62702-F296
Q 371 Transistor
2sc 684
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Untitled
Abstract: No abstract text available
Text: CRO BFX48 PNP SILICON TRANSISTOR DESCRIPTION BFX48 is PNP silicon transistor designed for general purpose, saturated switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
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BFX48
BFX48
100mA
360mW
100MHz
300/xS,
Jan-97
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
BFX55
Q60206-X55
fl235bOS
3004x
Transistor BFX 59
634 transistor
bfx 63
63310-A
BFX55
D-10
Q60206-X55
Transistor BFX 90
BFX 79
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BFX48
Abstract: 04JE small signal transistor
Text: BFX48 PNP SILICON TRANSISTOR DESCRIPTION BFX48 is PNP silicon transistor designed for general purpose, saturated switching and amplifier applications. ELECTRO-OPTICAL CHARACTERISTICS T a= 25°C SYMBOL MIN Collector-Emitter Breakdown Voltage LVCEO* 30 V
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BFX48
100mA
360mW
100MHz
04JE
small signal transistor
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BFX89
Abstract: F296 Q62702 Scans-0010548 transistor TO-72 Transistor BFX Transistor BFX 41
Text: NPIVI-Transistor fü r A n ten n en verstärker BFX 89 BFX 89 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allge meine Anwendungen bis in den GHz-Bereich geeignet, z.B. für Antennen- und Hochfre
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BFX89
Q62702â
F296
Q62702
Scans-0010548
transistor TO-72
Transistor BFX
Transistor BFX 41
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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BFX85
Abstract: No abstract text available
Text: BFX85 NPN '~1 SILICON TRANSISTOR T O -3 9 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high yoltage and high current are required. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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BFX85
800mW
150mA
500mA
100mA*
20MHz
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