TRANSISTOR D 471
Abstract: transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn
Text: 2SC D • ßSBSbOS OQQMMR'l 7 « S I E NPN Silicon Planar Transistors G , ~ T ~ 3 l BF 469 BF 471 SIEMENS AKT IE NG ES E L LS C H A F BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic
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62702-F497
62702-F507
Q62902-B63
Q62902-B62
BF471
535b05
GQQ45Q1
BF469
TRANSISTOR D 471
transistor BR 471 A
S100 NPN Transistor
transistor 547 b
471 npn
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transistor K 1413
Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
Text: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S
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BF470S
DIN41
BF469S
T0126
15A3DIN
transistor K 1413
D 1413 transistor
MARKING NJ CODE SOT 23
k 1413 FET
sf-471
TRANSISTOR D 471
BF471S
BF469S
BF470S
S110
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transistor BR 471 A
Abstract: Planar RF Transistor BF 472 BF471
Text: BF 472 Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon P N P Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video ß-c/ass p o w e r stages in TV-receivers Besondere Merkmale: Features: • Hohe Sperrspannung
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627/1176A1
transistor BR 471 A
Planar RF Transistor
BF 472
BF471
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transistor BR 471 A
Abstract: BF471
Text: 4m> BF 472 'W Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video B-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Hohe Sperrspannung
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N125A
627/1177A2
transistor BR 471 A
BF471
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transistor BR 471 A
Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage
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N125A
626/1177A2
transistor BR 471 A
be27
BF 471
Transistor A 471
CM 90-PS
Scans-0010675
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45mO
Abstract: 2SK2985
Text: TOSHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O S ÏÏ 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= 4.5mO (Typ.)
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2SK2985
45mO
2SK2985
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2SK2985
Abstract: No abstract text available
Text: TOSHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U - M O S ÏÏ 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON) = 4.5 mH (Typ.) High Forward Transfer Admittance : |Yfs| = 70S (Typ.)
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2SK2985
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON) = 4.5 m il (Typ.)
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2SK2985
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TRANSISTOR D 471
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-M O SII 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= 4.5mfl (Typ.)
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2SK2985
20kil)
TRANSISTOR D 471
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK2985 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SH 2SK2985 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 Low Drain-Source ON Resistance
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2SK2985
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Untitled
Abstract: No abstract text available
Text: S0 T89 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX704 FEATURES: * 1A CONTINUOUS COLLECTOR CURRENT * 1.5W POWER DISSIPATION * GUARANTEED HFE SPECIFIED UP TO 2A * FAST SWITCHING PARTMARKING DETAIL - 704 ABSOLUTE MAXIMUM RATINGS VALUE UNIT -120
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FCX704
-10mA*
-10mA,
-100mA,
300/iS.
DS150
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DIN125A
Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Text: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:
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T-33-17
DIN41869
DIN125A
BF472S
T0126
15A3DIN
transistor bc 470
BF470S
din 125a
transistor Al6
a02 Transistor rf
TRANSISTOR G13
transistor marking code AL
BF472
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UC130
Abstract: transistor BR 471 A din 125a BF 471 bf471
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class p o w e r stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung •
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626/1176A1
UC130
transistor BR 471 A
din 125a
BF 471
bf471
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2sk2312
Abstract: transistor BR 471 A
Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance
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2SK2312
2sk2312
transistor BR 471 A
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k2312
Abstract: k2312 transistor 2SK2312 toshiba motor k231
Text: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) High forward transfer admittance
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2SK2312
k2312
k2312 transistor
2SK2312
toshiba motor
k231
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K2312
Abstract: 2sk2312 k1101
Text: TOSHIBA 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ± 0.3 4 V Gate Drive
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2SK2312
K2312
2sk2312
k1101
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BLX65
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the
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BLX65
7Z61745
BLX65
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K2312
Abstract: 2sk2312
Text: T O S H IB A 2SK2312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS r 4V Gate Drive
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2SK2312
K2312
2sk2312
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BLS3135-50
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A
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M3D259
BLS3135-50
OT422A
125002/02/pp8
BLS3135-50
BP317
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
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bbS3R31
bbS3R31
Q02RltlR
7Z88750
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Untitled
Abstract: No abstract text available
Text: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 70 S (typ.)
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2SK2985
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2SK2376
Abstract: VNQ marking MOS RG 701 TRANSISTOR MARKING kd
Text: TOSHIBA 2SK2376 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2376 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS 10.3MAX.
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2SK2376
2SK2376
VNQ marking MOS
RG 701
TRANSISTOR MARKING kd
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transistor 2SA
Abstract: 2106a
Text: Ordering n u m b e r:EN4 7 1 9 J I SA\YO 2SA1864 No.4719 PNP Epitaxial Planar Silicon Transistor i Muting Circuits, Driver Applications F eatu res •On-chip bias resistors R l = 4.7kQ, R2 = 4.7kQ . ■Very sm all-sized package making 2SA1864-applied sets small and slim.
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2SA1864
2SA1864-applied
--10V
62094MT
AX-8999
transistor 2SA
2106a
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BSH112
Abstract: No abstract text available
Text: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.
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BSH112
M3D088
BSH112
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