Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BR B772 Search Results

    TRANSISTOR BR B772 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BR B772 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    br b772

    Abstract: b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		O-126 O-126 -100mA 10MHz br b772 b772 transistor TRANSISTOR br b772 b772 pnp b772 TRANSISTOR b772 transistors b772 b772 pnp PDF

    b772 p

    Abstract: br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:


    Original     		-100mA 10MHz b772 p br b772 TRANSISTOR b772 B772 transistors b772 pnp b772 b772 transistor b772 pnp TRANSISTOR br b772 DSA0026811 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range


    Original     		O-126 290TYP 090TYP PDF

    B772

    Abstract: TRANSISTOR br b772 TRANSISTOR B772 sot-89
    Text: SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		OT-89 OT-89 -100mA 10MHz B772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 PDF

    br b772

    Abstract: TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br
    Text: B772 B772 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 625 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		-100mA 10MHz br b772 TRANSISTOR b772 TRANSISTOR br b772 b772 p B772 b772 transistor pnp b772 B772 equivalent b772 pnp TRANSISTOR b772 br PDF

    transistor b722

    Abstract: transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p
    Text: B772 TO-126 Plastic-Encapsulate Transistors Transistor PNP FEATURES TO-126 Power dissipation o P CM :1.25 W (Tamb=25 C) Collector current I CM :-3 A 1.EMITTER Collector-base voltage 2.COLLECTOR V (BR)CBO :-40 V 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS o (Tamb=25 C unless otherwise specified)


    Original     		O-126 O-126 transistor b722 transistor b722 p B722 p B722 TRANSISTOR DATA b772 to 126 transistor b722 b N E C B772 b722 transistor pnp b722 b772 p PDF

    b772s

    Abstract: No abstract text available
    Text: B772S Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3 BASE Features — Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage


    Original     		B772S -100A -10mA -100A 10MHz b772s PDF

    TRANSISTOR b772

    Abstract: br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772
    Text: B772 PNP TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3 BASE 1 2 3 Features Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO


    Original     		O-251 O-251 -100A -10mA -100A 10MHz TRANSISTOR b772 br b772 B772 PNP B772 TRANSISTOR br b772 TO-251 B772 R/SmD transistor b772 PDF

    B772 TRANSISTOR

    Abstract: br b772 TRANSISTOR b772 b772 TRANSISTOR br b772
    Text: B772 Transistor PNP 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features — Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage


    Original     		O-252-2L -100A -10mA -100A 10MHz B772 TRANSISTOR br b772 TRANSISTOR b772 b772 TRANSISTOR br b772 PDF

    br b772

    Abstract: TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f
    Text: B772 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLETOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Low speed switching 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30


    Original     		OT-89 OT-89 -100A -10mA -100A 10MHz br b772 TRANSISTOR b772 b772 TRANSISTOR br b772 TRANSISTOR B772 sot-89 B772 SOT-89 sot 89 b772 transistor PNP b772 B772 TRANSISTOR b772 f PDF

    br b772

    Abstract: TRANSISTOR b772 TRANSISTOR br b772 B772 b772 to 126 B772 PNP transistor GR 3200 b772 to126 TRANSISTOR b772 br B772 TO-126
    Text: B772 PNP TO-126 Transistor TO-126 2.500 1.100 2.900 1.500 7.400 7.800 1. EMITTER 3.900 4.100 3.000 3.200 10.60 0 11.00 0 2.COLLECTOR 0.000 0.300 2.100 2.300 3.BASE 3 2 Features — 1.170 1.370 1 15.30 0 15.70 0 Low speed switching 0.660 0.860 0.450 0.600 2.290 TYP


    Original     		O-126 O-126 -100A -10mA -100A 10MHz br b772 TRANSISTOR b772 TRANSISTOR br b772 B772 b772 to 126 B772 PNP transistor GR 3200 b772 to126 TRANSISTOR b772 br B772 TO-126 PDF

    Untitled

    Abstract: No abstract text available
    Text: B772S PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G  Emitter  Collector  Base H J A D A B C D E F G H J K B K E C Millimeter


    Original     		B772S 10MHz 07-May-2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: B772C -3A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C FEATURES    Low frequency power amplifier High Current Low Speed Switching Emitter


    Original     		B772C O-126C B772C-R B772C-O B772C-Y B772C-GR -10mA, -100mA -200mA PDF

    b772s

    Abstract: B772S-R B772 400DA pnp Transistor TO92 5V 200mA
    Text: B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H 1Emitter 2Collector 3Base J CLASSIFICATION OF hFE A Product-Rank


    Original     		B772S B772S-R B772S-O B772S-Y B772S-GR -10mA, -200mA -100mA, 10MHz b772s B772S-R B772 400DA pnp Transistor TO92 5V 200mA PDF

    b772 p

    Abstract: C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLETOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage


    Original     		OT-89 OT-89 -100mA 10MHz b772 p C01A TRANSISTOR B772 sot-89 br b772 TRANSISTOR b772 transistors b772 b772 pnp b772 B772 TRANSISTOR SOT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		O-251 O-251 10MHz PDF

    b772

    Abstract: TRANSISTOR b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		O-252 O-252 10MHz b772 TRANSISTOR b772 PDF

    b772

    Abstract: BR B772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-252 FEATURES •Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		O-252 O-252 10MHz b772 BR B772 PDF

    br b772

    Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		O-126 O-126 -10mA -100A 10MHz br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126 PDF

    TO-251 B772

    Abstract: br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		O-251 O-251 -100A 10MHz TO-251 B772 br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 B772 equivalent B772 PNP b772 transistor transistors b772 PDF

    B772

    Abstract: br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 TRANSISTOR（PNP） SOT-89 FEATURES Low speed switching 1 2 3 1. BASE 1 2. COLLETOR 2 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units


    Original     		OT-89 OT-89 -10mA -100A 10MHz B772 br b772 TRANSISTOR b772 B772 PNP B772 SOT-89 sot 89 b772 transistors b772 B772 datasheet B772 equivalent PDF

    TO-251 B772

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors B772 TO-251 TRANSISTOR PNP FEATURES 1. EMITTER •Low speed switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		O-251 O-251 10MHz TO-251 B772 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 B772 TRANSISTOR PNP FEATURES 1. EMITTER Low Speed Switching 2. COLLECTOR 3 BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		O-251 O-251 -10mA 10MHz PDF

    b772s

    Abstract: transistors b772s
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors B772S TO-92 TRANSISTOR PNP FEATURES Low speed switching 1. EMITTER 2. COLLECTOR 3 BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		B772S -100A 10MHz b772s transistors b772s PDF