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    TRANSISTOR BSS138 Search Results

    TRANSISTOR BSS138 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BSS138 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TD 367C

    Abstract: dual gate n-channel mosfet transistor BSS138W
    Text: BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current


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    BSS138W BSS138W TD 367C dual gate n-channel mosfet transistor PDF

    BSS138W

    Abstract: No abstract text available
    Text: BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current


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    BSS138W OT-323 OT-323 BSS138W PDF

    d 417 transistor

    Abstract: No abstract text available
    Text: N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: • • • • • Low On-Resisrance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input / Output Leakage SOT-23 Applications: • N-channel Enhancement Mode Effect Transistor


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    OT-23 element14 d 417 transistor PDF

    BSS138

    Abstract: transistor bss138
    Text: May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products


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    BSS138 OT-23 BSS138 transistor bss138 PDF

    B5G1

    Abstract: BSS138
    Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan
    BSS138 OT-23 B5G1 BSS138 PDF

    J1 TRANSISTOR DIODE SOT-23 PACKAGE

    Abstract: J1 TRANSISTOR DIODE SOT-23 marking J1 sot-23 BSS138LT1 marking 8b sot-23 BSS138LT3 TO-236A MOSFET j1 sot-23 SOT 23 MOSFET
    Text: MOTOROLA Order this document by BSS138LT1/D SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in


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    BSS138LT1/D BSS138LT1 OT-23 J1 TRANSISTOR DIODE SOT-23 PACKAGE J1 TRANSISTOR DIODE SOT-23 marking J1 sot-23 BSS138LT1 marking 8b sot-23 BSS138LT3 TO-236A MOSFET j1 sot-23 SOT 23 MOSFET PDF

    K38 SOT-23

    Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23


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    BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144 K38 SOT-23 BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING marking k38 BSS138-7 BSS138-7-F PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    BSS138AKA O-236AB) AEC-Q101 PDF

    BSS138DW-7-F

    Abstract: TRANSISTOR K38 BSS138DW BSS138DW-7
    Text: BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version Note 4


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    BSS138DW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS30203 BSS138DW-7-F TRANSISTOR K38 BSS138DW BSS138DW-7 PDF

    K38 SOT-23

    Abstract: marking k38
    Text: BSS138 ADVANCE INFORMATION N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · ·


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    BSS138 OT-23 OT-23, MIL-STD-202, 250mA -250mA 300ms, DS30144 K38 SOT-23 marking k38 PDF

    BSS138K

    Abstract: marking sk A114A FAIRCHILD DIODE
    Text: BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    BSS138K A114A C101C BSS138K marking sk A114A FAIRCHILD DIODE PDF

    BC237

    Abstract: BC857A MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


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    BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC857A MARKING CODE diode sod123 W1 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    BSS138K A114A C101C PDF

    equivalent transistor k38

    Abstract: K38 SOT-23 bss138 k38
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Note 3


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    BSS138 AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS30144 equivalent transistor k38 K38 SOT-23 bss138 k38 PDF

    BSS138-7

    Abstract: BSS138 transistor bss138 bss138 MARKING
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


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    BSS138 OT-23 BSS138-7 BSS138 transistor bss138 bss138 MARKING PDF

    spice model BSS138W

    Abstract: TRANSISTOR K38 BSS138* spice model BSS138W BSS138W-7 BSS138W-7-F J-STD-020A
    Text: SPICE MODELS: BSS138W BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version A B C G Mechanical Data ·


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    BSS138W OT-323, J-STD-020A MIL-STD-202, DS30206 spice model BSS138W TRANSISTOR K38 BSS138* spice model BSS138W BSS138W-7 BSS138W-7-F J-STD-020A PDF

    marking SK

    Abstract: BSS138K A114A
    Text: BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    BSS138K A114A C101C marking SK BSS138K A114A PDF

    K38 SOT-23

    Abstract: equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    BSS138 AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30144 K38 SOT-23 equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138 PDF

    BC237

    Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,


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    BSS138LT1 OT-23 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


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    BSS138 PDF

    transistor bss138

    Abstract: bss138 bss138 MARKING BSS138 SS
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


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    BSS138 OT-23 transistor bss138 bss138 bss138 MARKING BSS138 SS PDF

    BSS138* spice model

    Abstract: bss138 K38 SOT-23
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23


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    BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144 BSS138* spice model bss138 K38 SOT-23 PDF

    equivalent transistor k38

    Abstract: marking k38 sot323-6
    Text: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    BSS138W OT-323 J-STD-020C MIL-STD-202, DS30206 equivalent transistor k38 marking k38 sot323-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Available in Lead Free/RoHS Compliant Version Note 4


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    BSS138DW AEC-Q101 OT-363 J-STD-020 MIL-STD-202, DS30203 PDF