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    TRANSISTOR BU 210 Search Results

    TRANSISTOR BU 210 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BU 210 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    014S4C BUZ80A_ BUZ80A T-39-11 PDF

    MTPBP10

    Abstract: UL-44 l44 transistor transistor L44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed


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    BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44 PDF

    BUH713

    Abstract: No abstract text available
    Text: SGS-THOMSON IM O e œ iL i © « BU H 713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. F ILE # E81734(N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR


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    ISOWATT218 E81734 BUH713 PDF

    L146F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUL146/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet BUL146* BU L146F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device The BUL146/BUL146F have an applications specific s ta te -o f-th e -a rt die designed


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    BUL146/D BUL146* L146F* BUL146/BUL146F BUL44F 221D-02 O-220 L146F PDF

    V103 TRANSISTOR

    Abstract: BUZ80A T0220AB V103 buz80
    Text: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in


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    BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80 PDF

    m605

    Abstract: 1di200 m602 ic 6DI30B-050
    Text: Q BIPOLAR TRANSISTOR MODULES Ratings and Specifications 1400 volts class pow er transistor m odules • P o w e r tra n sisto rs and free w h e e l d io d e s are bu ilt into o n e package. • T e rm in a l la yo u t in w h ic h driv e w irin g and p o w e r w irin g d o not c o m e accross.


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    2DI30A-140 2DI100A-140 1DI200A-140 2DI200A-020 m605 1di200 m602 ic 6DI30B-050 PDF

    PPCP

    Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
    Text: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity


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    DJ40/EI PPCP transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk PDF

    TDA 4600-2

    Abstract: Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100
    Text: S IE M E N S Control ICs for Switched-Mode Power Supplies TDA 4601 Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic Base current drive proportional to collector current


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    Q67000-A2379 4601-D Q67000-A2390 P-DIP-18 4601/D /125V TDA 4600-2 Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100 PDF

    VEB mikroelektronik

    Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
    Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP


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    57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft PDF

    IR 92 0151

    Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.


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    AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184 PDF

    transistor 5BM

    Abstract: BUK443 BUK443-60A BUK443-60B
    Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In


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    0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B PDF

    transistor BU 102

    Abstract: bk 101 transistor SS TRANSISTOR DIN19234
    Text: Proximity Sensors Inductive ABS Housing Type DU, Fork-shaped • Fork-shaped ABS housing • Slot sizes: 3.5, 5, 6, 10 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: NAMUR (DIN 19234) Transistor NPN, make switching • Protection: Reverse polarity


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    N493

    Abstract: basf 100cjd
    Text: MOTORCLA SC XSTRS/R F 12E D | b3fc,72SM O G ä M m M T | T- 33-/3 MOTOROLA BUX47 BUX47A SEMICONDUCTOR TECHNICAL DATA 9 AM PERES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS 400 AND 450 V O LT S BVCEO 160 WATTS 850 * 1000 V (BVCEX)


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    BUX47 BUX47A N493 basf 100cjd PDF

    w016

    Abstract: SL1018 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode
    Text: SL1018 Semiconductor FM IF SYSTEM Description The SL1018 has versatile muting characteristics and allows receiver designers to realize the muting performance according to their design concept. Functions • FM IF Amplifier/Limiter • Quadrature Detector • AFC Clamp • AGC Drive


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    SL1018 SL1018 400Hz -75KH -75KHz KSI-W016-000 w016 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode PDF

    up/tic 236b

    Abstract: No abstract text available
    Text: BL9180 Dual,3 Dual,300mA UltraUltra-low Noise CMOS LDO Regulator FEATURES DESCRIPTION Up to 300mA Output Current Each LDO The BL9180 dual, low noise, low-dropout regulator Dual Shutdown Pins Control Each Output supplying up to 300mA output current at each


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    BL9180 300mA BL9180 220mV 300mA up/tic 236b PDF

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING PIN : Pin VCC1 ®VCC2 ©PO ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted


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    M57774 220-225MHZ, Parame90 PDF

    pt100 LAPP

    Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751
    Text: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES


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    XTR105 k/XTR105. 4-20mA 30nAp-p 110dBmin 14-PIN SO-14 Pt100 pt100 LAPP IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N XTR106 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization FEATURES APPLICATIONS • LOW TOTAL UNADJUSTED ERROR • PRESSURE BRIDGE TRANSMITTER • 2.5V, 5V BRIDGE EXCITATION REFERENCE • STRAIN GAGE TRANSMITTER • 5.1V REGULATOR OUTPUT


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    XTR106 4-20mA i25ppm 25fiV/Â 110dBmin 14-PIN SO-14 D033b22 ZZ235 PDF

    transistor 123 DL

    Abstract: F6-15R10K
    Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor Itansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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    F6-15R10K 34d32ci7 transistor 123 DL F6-15R10K PDF

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « | b b | XTR110 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS • 4mA TO 20mA TRANSMITTER • INDUSTRIAL PROCESS CONTROL • SELECTABLE INPUT/OUTPUT RANGES:


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    XTR110 10-turn LM324 IR513( IRFF9113 200mA 17313fcj5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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    Untitled

    Abstract: No abstract text available
    Text: 15 ÛEC PLE SS EY SEMICONDS D 3 7 böS EE 0D0Ô313 M « P L S B • PLESSEY Semiconductors. ZN447/ZN448/ZN449 " P - S 1 - I0 - Q 2 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing


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    ZN447/ZN448/ZN449 ZN447, ZN448 ZN449 PDF