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    TRANSISTOR BUZ Search Results

    TRANSISTOR BUZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53131 BUZ310 T0218AA; T-39-11 bbS3T31 T-39-H PDF

    Untitled

    Abstract: No abstract text available
    Text: , U na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PowerMOS transistor GENERAL DESCRIPTION BUZ84 QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a metal envelope.


    Original     		BUZ84 PDF

    BUZ34

    Abstract: 6j11 V103
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103 PDF

    BUZ351

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ351 T0218AA; T-39-13 BUZ351 PDF

    BUZ54

    Abstract: No abstract text available
    Text: , Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope.


    Original     		BUZ54 Tmb-25 Tj-25Â VR-100V BUZ54 PDF

    BUZ14

    Abstract: D1267 D0145 transistor buz L11F
    Text: BUZ14 PowerMOS transistor N A 1ER PHILIPS/DISCRETE ObE D btiSBTBl D0mS77 4 T-51 H3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ14 D0mS77 T-51-13 BJJZ14 bbS3T31 BUZ14 D1267 D0145 transistor buz L11F PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ74A PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • bfc.53131 0014514 5 ■ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ74A BUZ74A_ T-39-1I bbS3T31 T-39-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE ObE D PowerMOS transistor • bbSB^l 0014535 T ■ “ BUZ78 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ78 BUZ78_ D01454Q T-39-11 PDF

    buz357

    Abstract: Transistor 5331 MC 140 transistor
    Text: N AMER PHILIPS/DISCRETE DfaE D » PowerMOS transistor bb53^31 0 DIM fiM3 BUZ357^_ ^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ357^ T0218AA; bbSBT31 BUZ357 T-39-13 buz357 Transistor 5331 MC 140 transistor PDF

    MC 140 transistor

    Abstract: "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor
    Text: N AMER PHILIPS/DISCRETE QbE 3> PowerMOS transistor • bb53131 0014714 1 BUZ385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor


    OCR Scan     		bb53131 BUZ385 T0218AA; BUZ38S T-39-13 MC 140 transistor "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ60 PowerMOS transistor N AMER PHILIPS/DISCRETE ObE D • v " bbSBTBl 0014475 1 ■ ^ # , * May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ60 O220AB; bbS3T31 001447b T-39-11 BUZ60_ T-39-u" PDF

    BUZ10

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53T31 BUZ10 D0143flb T-39-11 7Z21184 BUZ10_ BUZ10 PDF

    BUZ358

    Abstract: LDM80
    Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53131 BUZ358 r-31- T0218AA; T-39-13 800VC BUZ358 LDM80 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bfc,S3^31 0014366 1 ■ BUZ11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ11 BUZ11_ 00143TE T-39-11 bbS3T31 I-39-11 PDF

    BUZ50B

    Abstract: T0220AB 2SC252
    Text: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		hhS3T31 001MSb3 BUZ50B bb53131 T-39-11. BUZ50B T0220AB 2SC252 PDF

    sy 171

    Abstract: diode sy 171 BUZ76 T0220AB
    Text: BUZ76 PftwprMOS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl 0D14M7T H m ~ T - ^ - U May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ76 0D14M7T T0220AB; byS3T31 T-39-11 sy 171 diode sy 171 BUZ76 T0220AB PDF

    BUZ24

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53cl31 OOmSTfl 1 ■ - BUZ24 r-3 i-is July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE D PowerMOS transistor • bb53ci31 Oai45b3 4 ■ ” BUZ50B T'Sl' H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53c Oai45b3 BUZ50B Q0145b7 T-39-11 bbS3T31 00145bfl PDF

    BUZ24

    Abstract: IEC134
    Text: ObE D N AUER PHILIPS/DISCRETE ^53131 00145TÖ BUZ24 PowerMOS transistor 1 T -S i-lS July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		00145T6 BUZ24 T-39-13 BUZ24 IEC134 PDF

    BUZ54A

    Abstract: IEC134 BUZ54
    Text: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ54A 7Z63885 T-39-13 BUZ54A IEC134 BUZ54 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ83 ObE D • bb 53131 OOlMbfia 1 ■ r - 3 9 -!/ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ83 T-39-11 BUZ83_ bb53T31 bb53131 PDF

    BUZ73AI

    Abstract: buz73a
    Text: N AMER PHILIPS/DISCRETE PowerMUS transistor QbE J> m “ ^53=131 D0144bS 4 • BUZ73A -r_ ?< May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		D0144bS BUZ73A bbS3T31 T-39-11 BUZ73A_ aS3T31 BUZ73Ai- QD14471 BUZ73AI buz73a PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ObE D • bbS3T31 0014507 S ■ PowerMOS transistor ~~ BUZ74 T -3^- 11 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bbS3T31 BUZ74 BUZ74_ LLSBT31 T-39-11 PDF