TRANSISTOR BW 51 Search Results

TRANSISTOR BW 51 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BW 51 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DIL-4044 Abstract: Dionics 8C27 4044 Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,	Original	DIL-4044 100nA; Dionics 8C27 4044	PDF
7474 ic Abstract: IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DIL-4044 MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Description: Dual NPN transistors, Dielectrically Isolated,	Original	DIL-4044 100nA; 7474 ic IC 7474 IC 7474 datasheet 4044 transistor nf 7474 IC datasheets dionics 7474 features of ic 7474 10PA	PDF
7474 ic Abstract: IC 7474 IC 7474 datasheet 7474 IC datasheets datasheet of 7474 ic 7474 7474 ic datasheet IC 7479 Dionics pin IC 7474 Text: DIONICS, INC. Phone: 516 997-7474 Fax: (516) 997-7479 Website: www.dionics-usa.com 65 Rushmore Street Westbury, NY 11590 DI-4044 SOIC MATCHED DIELECTRICALLY ISOLATED DUAL NPN TRANSISTORS Package Layout: Dielectrically Isolated Small 8-pin SOIC Package High Operating Temperature	Original	DI-4044 100nA; 7474 ic IC 7474 IC 7474 datasheet 7474 IC datasheets datasheet of 7474 ic 7474 7474 ic datasheet IC 7479 Dionics pin IC 7474	PDF
Untitled Abstract: No abstract text available Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990	PDF
transistor 7350 A Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor 7350 Text: AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19060E Hz--1990 AGR19060E AGR19060XU AGR19060EF AGR19060XE 12-digit transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor 7350	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU JESD22-C101A R190 19090 Text: AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E AGR19090EU AGR19090EF 100B100JCA500X AGR19090EF AGR19090EU JESD22-C101A R190 19090	PDF
transistor 7350 Abstract: 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A transistor z14 L Text: Preliminary Data Sheet March 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19060E Hz--1990 AGR19060E DS04-078RFPP DS01-216RFPP) transistor 7350 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A transistor z14 L	PDF
2N4261 Abstract: 2N4261UB Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV	Original	MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UB, T4-LDS-0150 2N4261 2N4261UB	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-079RFPP DS04-034RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF
100B100JCA500X Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19090E Hz--1990 AGR19090E DS04-160RFPP DS04-079RFPP) 100B100JCA500X AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A	PDF
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496	PDF
smd code HF transistor Abstract: BLF3G21-6 Text: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance	Original	BLF3G21-6 ACPR600k BLF3G21-6 smd code HF transistor	PDF
LMX2332LTM Abstract: HPE3610A LMX2332L Text: LMX2332LTM EVALUATION BOARD OPERATING INSTRUCTIONS General Description The LMX2332LTM Evaluation Board simplifies evaluation of the LMX2332L 1.2 GHz/510 MHz PLLatinum dual frequency synthesizer. The board enables all performance measurements with no additional support circuitry.	Original	LMX2332LTM LMX2332LTM LMX2332L GHz/510 LMX2332L, 10-Pin LMX2332LTMFPEB HPE3610A	PDF
Untitled Abstract: No abstract text available Text: BLF3G21-6 UHF power LDMOS transistor Rev. 2 — 11 April 2013 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance	Original	BLF3G21-6 ACPR600k	PDF

block diagram of ca3130 Abstract: CA3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E Text: CA3130, CA3130A Data Sheet 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output CA3130A and CA3130 are op amps that combine the advantage of both CMOS and bipolar transistors. Gate-protected P-Channel MOSFET PMOS transistors are used in the input circuit to provide very-high-input	Original	CA3130, CA3130A 15MHz, CA3130A CA3130 -55oC block diagram of ca3130 pin diagram of IC ca3130 IC1 CA3130 CURRENT TO VOLTAGE CONVERTER ca3130 equivalent Ic2 ca3130 about the IC ca3130 IC1 CA3130 CA3130T CA3600E	PDF
TCHT1130 Abstract: Ex-90C Text: J TELEFUNKEN ELECTRONIC 4ME D HH fi^GO^ti 001117= T E i ALG6 Optocouplers ' T ' H I - $ "J? Standard Opto Isolators w ith Transistor Output Package Type C haracteristics UL-recognized: CTR File No. E 76414 Dimensions see page 56 - _ i j bW 1T T m N ; liJ	OCR Scan	TCHT1130 0806/IE 601-0860/IEC TCHT1130 Ex-90C	PDF
MURATA VCO Series Abstract: LQN2A transistor AFR 16 transistor afr 22 murata vco module transistor bw 51 fujitsu power amplifier GHz vco fujitsu 900mhz taiyo yuden transistor 8P Text: D S 0 4 -2 1 6 0 0 -3 E . MB551 1 : DATA SHEET ASSP for DTS BIPOLAR Prescaler with VCO Dual-Modulus, 1.0 GHz • DESCRIPTION The MB551 is a dual-modulus prescaler incoporating a voltage controlled oscillator (VCO) and is used with 900-MHz band frequency synthesizers. The MB551 consists of: a Colpitts oscillator with grounded base capa	OCR Scan	MB551 MB551 900-MHz MURATA VCO Series LQN2A transistor AFR 16 transistor afr 22 murata vco module transistor bw 51 fujitsu power amplifier GHz vco fujitsu 900mhz taiyo yuden transistor 8P	PDF
Untitled Abstract: No abstract text available Text: ASSP forDTS BIPOLAR Prescaler with VCO Dual-Modulus, 1.0 GHz MB551 DESCRIPTION The MB551 is a dual-modulus prescaler incorporating a voltage controlled oscillator (VCO) used for 900-MHz band frequency synthesizers. The MB551 consists of: a Colpitts oscillator with grounded base capacitor, a buffer	OCR Scan	MB551 MB551 900-MHz 002SCH0 374T7SL. MB551PF FPT-8P-M01)	PDF
Untitled Abstract: No abstract text available Text: 2 'S » FUJITSU July 1990 Edition 1.0 DATA SH EET • MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual m odulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.	OCR Scan	MB551 MB551	PDF
mb551 Abstract: colpitts oscillator construction TEL Prober MURATA VCO Series Fujitsu 10ghz transistor UCN103C sin 3545 transistor Text: July 1990 Edition 1.0 FUJITSU DATA SHEET MB551 1.0GHz DUAL MODULUS PRESCALER 1.0 GHz DUAL MODULUS PRESCALER CONTAINS VCO CIRCUIT The Fujitsu MB551 is a dual modulus prescaler on-chip VCO Voltage controlled oscillator designed for use in 900 MHz frequency synthesizer application.	OCR Scan	MB551 D-6000 colpitts oscillator construction TEL Prober MURATA VCO Series Fujitsu 10ghz transistor UCN103C sin 3545 transistor	PDF
LQN2A Abstract: MURATA VCO Series murata vco module taiyo 88-R Text: ASSE for DTS preicaler w ffiVG Q Dual-MoëutuSHîOGHz • DESCRIPTION The MB551 is a dual-modulus prescaler incorporating a voltage controlled oscillator (VCO) used for 900-MHz band frequency synthesizers. The MB551 consists of: a Col pitts oscillator with grounded base capacitor, a buffer	OCR Scan	MB551 900-MHz F9703 LQN2A MURATA VCO Series murata vco module taiyo 88-R	PDF
Untitled Abstract: No abstract text available Text: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Fairchild Im aging Sensors CCD326A 256/512-B it Analog Shift Register Charge Coupled Device FEATURES • Electrically variable analog delay line for audio and video applications. ■ Excellent bandwidth at video and audio rates due to burled channel technology.	OCR Scan	CCD326A 256/512-B CCD326 256-bit CCD326VM CCD326A-3. CCD321VM.	PDF
J300 Siliconix Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note Text: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier	OCR Scan		PDF

TRANSISTOR BW 51 Search Results

TRANSISTOR BW 51 Result Highlights (5)

TRANSISTOR BW 51 Datasheets Context Search

DIL-4044

7474 ic

7474 ic

Untitled

transistor 7350 A

100B100JCA500X

transistor 7350

2N4261

100B100JCA500X

100B100JCA500X

transistor 7350

smd code HF transistor

LMX2332LTM

Untitled

block diagram of ca3130

TCHT1130

MURATA VCO Series

Untitled

Untitled

mb551

LQN2A

Untitled

Untitled

J300 Siliconix