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    TRANSISTOR C 1279 Search Results

    TRANSISTOR C 1279 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 1279 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    Transistor C 1279

    Abstract: 2SC1279 2SC127 C1279 MA177
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION 2S C 127 9 D The 2SC 1279 is designed fo r use high voltage switching ap­ plication. FEATURES • High Breakdown Voltage 2 B V cbo : 180 V ABSOLUTE M AXIM U M RATINGS Maximum Temperatures Storage Tem perature. -5 5 to +125 °C


    OCR Scan     		PDF

    transistor c 2335

    Abstract: C-150 IRFI840G IRGIB15B60KD1
    Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGIB15B60KD1 O-220 IRFI840G O-220 transistor c 2335 C-150 IRFI840G IRGIB15B60KD1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGIB15B60KD1PbF O-220 O-220 PDF

    IRGIB15B60KD1P

    Abstract: C-150
    Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGIB15B60KD1P O-220 O-220 IRGIB15B60KD1P C-150 PDF

    transistor BR 9013

    Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
    Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		4599A IRGIB15B60KD1 O-220 IRFI840G O-220 transistor BR 9013 C-150 IRFI840G IRGIB15B60KD1 transistor c 2335 PDF

    transistor BR 9013

    Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
    Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		4599A IRGIB15B60KD1 O-220 IRFI840G O-220 transistor BR 9013 C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGIB15B60KD1P O-220 O-220 PDF

    C-150

    Abstract: IRGIB15B60KD1P
    Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		IRGIB15B60KD1P O-220 O-220 C-150 IRGIB15B60KD1P PDF

    2SC1271

    Abstract: EP253 transistors 1UW
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		Tc-25 re-25-C) /-175MHz. /-175MHz, 2SC1271 EP253 transistors 1UW PDF

    0116 Solar Lamp Controller

    Abstract: transistor 2A ZXSC300
    Text: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the


    Original     		ZXSC100 ZXSC100 wit701-04 0116 Solar Lamp Controller transistor 2A ZXSC300 PDF

    0116 Solar Lamp Controller

    Abstract: d01608c-223 solar converter dc to dc diagram 0116 solar 0116 Solar Lamp 0116 solar 4 pins solar charge controller 24 TRANSISTOR MAKING transistor pnp 30V 2A 1W D03316P-223
    Text: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the


    Original     		ZXSC100 ZXSC100 0116 Solar Lamp Controller d01608c-223 solar converter dc to dc diagram 0116 solar 0116 Solar Lamp 0116 solar 4 pins solar charge controller 24 TRANSISTOR MAKING transistor pnp 30V 2A 1W D03316P-223 PDF

    0116 Solar Lamp Controller

    Abstract: 0116 Solar Lamp 0116 solar 4 pins 0116 solar D01608C-223 D03316P-223 NY TRANSISTOR MAKING LIST transistor 6835 ZXT14N20DX 2N2907
    Text: ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION DESCRIPTION efficiency over a wider range of load currents, several circuit configurations are possible with power dissipation up to 2W. The step up output voltage is easily programmed with external resistors, the


    Original     		ZXSC100 ZXSC100 0116 Solar Lamp Controller 0116 Solar Lamp 0116 solar 4 pins 0116 solar D01608C-223 D03316P-223 NY TRANSISTOR MAKING LIST transistor 6835 ZXT14N20DX 2N2907 PDF

    stk6105

    Abstract: sanyo motor 3 phase
    Text: Ordering number : EN4345A Thick Film Hybrid 1C No. 4345A STK6105 DC 3-phase Brushless Motor Driver Output Current 5A Overview Package Dimensions The STK6105 is a hybrid IC incorporating a 3-phase brushless motor controller and driver into a single package, on the Sanyo IMST (Insulated Metal Substrate


    OCR Scan     		EN4345A STK6105 STK6105 sanyo motor 3 phase PDF

    PCF7931AS

    Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
    Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps PDF

    transistor BF 697

    Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
    Text: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		711Dfl2tj 00bT3D5 BFS540 OT323 MBC870 OT323. emitt-172 transistor BF 697 transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn PDF

    Transistor C 1279

    Abstract: 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter
    Text: LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. Low phase noise oscillators up to 16 GHz VCO’s, DRO’s and YIG oscillators


    Original     		LPT16ED LPT16ED 16GHz. OC-192 OC-768 38-DST-01 Transistor C 1279 07AN001 BIPOLAR TRANSISTOR BARE die yig oscillator application note bipolar transistor ghz s-parameter 07MS001 SiGe POWER TRANSISTOR SiGe Semiconductor bipolar transistor s-parameter bipolar transistor 50 ghz s-parameter PDF

    PHC20306

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Complementary enhancement mode MOS transistor D u ro n «« PHC20306 PINNING -SOT96-1 S08 FEATURES • Very low on-state resistance • High-speed switching PIN SYMBOL 1 S1 DESCRIPTION t i l ’l l source 1


    OCR Scan     		PHC20306 -SOT96-1 OT96-1 PHC20306 PDF

    equivalent transistor TT 3043

    Abstract: transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308
    Text: Philips Semiconductors • 7 1 1 0 fl2 tj □0bT305 7bT B iP H IN Productspecification NPN 9 GHz wideband transistor BFS540 PINNING FEATURES PIN CONFIGURATION DESCRIPTION PIN • High power gain Code: N4 • Low noise figure • High transition frequency 1


    OCR Scan     		7110fl2tj BFS540 OT323 MBC370 OT323. emitte-176 equivalent transistor TT 3043 transistor TT 3043 transistor BI 342 905 LT312 MRC005 RF NPN POWER TRANSISTOR C 10-12 GHZ k a 431 transistor Transistor BF 479 BFR540 BTS 308 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage RF LDMOS Technology for Broadcast Applications S.J.C.H. Theeuwen, W.J.A.M. Sneijers, J.G.E. Klappe, J.A.M. de Boet NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands [email protected], [email protected], [email protected], [email protected]


    Original     		0-50V) 00-500W IEDM2006, PDF

    transistor k 4110

    Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
    Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­


    OCR Scan     		i-noa36Â osit34Â 354G-01 transistor k 4110 K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13 PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    4435a

    Abstract: 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 LC587006 LC587008 QFP80
    Text: Ordering number : EN*4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8, 12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC587008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD


    Original     		LC587008, LC587004, LC587006 LC587008 80-pin LC5870 4435a 4435 4435 transistor F 4435a 4435 m sanyo CG LC587004 QFP80 PDF

    44358

    Abstract: 4435a serial counter 24129 lek 923 LC587004 LC587006 LC587008 QIP80A 587006
    Text: Ordering number : ENÌK4435A CMOS LSI LC587008, 587006, 587004 Single-Chip 4-Bit Microprocessors with LCD Driver, 2 Kb RAM, and 8,12, or 16 KB ROM on chip Preliminary Overview The LC587004, LC587006 and LC5B7008 are 80-pin lowvoltage CMOS 4-bit microprocessors that include LCD


    OCR Scan     		K4435A LC587008, LC587004, LC587006 LC5B7008 80-pin LC5870 44358 4435a serial counter 24129 lek 923 LC587004 LC587008 QIP80A 587006 PDF