Untitled
Abstract: No abstract text available
Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
1000hrs
15min
20sec
1000cycle
96hrs
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SOT-23
Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
15min)
15min
20sec
1000cycle
96hrs
SOT-23
TRANSISTOR SMD fr 21
smd transistor ds 65
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BR 9014
Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Text: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector
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2T marking
Abstract: No abstract text available
Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case
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MMBT4403
MMBT4401
2N4403.
OT-23
MMBT4403
MMBT4403-GS18
MMBT4403-GS08
D-74025
24-May-04
2T marking
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2gm marking
Abstract: TRANSISTOR marking code vishay
Text: MMBTA56 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBTA06 is recommended. • This transistor is also available in the TO-92 case
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MMBTA56
MMBTA06
MPSA56.
OT-23
MMBTA56
MMBTA56-GS18
MMBTA56-GS08
D-74025
01-Sep-04
2gm marking
TRANSISTOR marking code vishay
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MMBT3906 vishay
Abstract: No abstract text available
Text: MMBT3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT3904 is recommended. • This transistor is also available in the TO-92 case
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MMBT3906
MMBT3904
2N3906.
OT-23
MMBT3906
MMBT3906-GS18
MMBT3906-GS08
D-74025
19-May-04
MMBT3906 vishay
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*2F MARKING
Abstract: No abstract text available
Text: MMBT2907A VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A.
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MMBT2907A
MPS2907A.
OT-23
MMBT2907A
MMBT2907A-GS18
MMBT2907A-GS08
D-74025
31-Aug-04
*2F MARKING
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BC550
Abstract: transistor bc550 pin configuration NPN transistor BC550 bc550 noise figure
Text: BC550 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups A, B and C according to its current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Collector 2. Base 3. Emitter
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BC550
BC550
transistor bc550
pin configuration NPN transistor BC550
bc550 noise figure
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PH2729-65M
Abstract: No abstract text available
Text: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation
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PH2729-65M
Curren44)
2052-56X-02
PH2729-65M
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Untitled
Abstract: No abstract text available
Text: RN4989AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4989AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 0.1±0.05
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RN4989AFS
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RN4983AFS
Abstract: No abstract text available
Text: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C fS6 R1 R2 B R2 B E 2 5
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RN4983AFS
RN4983AFS
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Untitled
Abstract: No abstract text available
Text: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 B fS6 R2 R2 B 2 5 3
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RN4983AFS
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RN4985AFS
Abstract: No abstract text available
Text: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 2 5 3 4 R1 fS6 1. EMITTER1
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RN4985AFS
RN4985AFS
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Untitled
Abstract: No abstract text available
Text: RN4987AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4987AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 0.1±0.05
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RN4987AFS
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Untitled
Abstract: No abstract text available
Text: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 fS6 2 5 3 4 1. EMITTER1
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RN4985AFS
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2SC4867
Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in
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ENN6117
FH201
2SC4871)
2SC4867)
FH20I
2SC4871
2SC4867,
FH201]
7117D7L
0D544b7
2SC4867
16T MARKING
FH201
ZS21
TA-1315
1hz OUTPUT
7CJE
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TLP621
Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
Text: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor
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TLP621
TLP621
TLP621,
TLP621-2,
TLP621-4
TLP621-2
TLP621-4
MARKING toshiba TLP621-4
e152349
11-5B2
E67349
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TLP620
Abstract: TLP620-2 TLP620-4
Text: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode
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TLP620
TLP620-2
TLP620-4
TLP620,
TLP620-2,
TLP620-4
TLP620
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BC250
Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
Text: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light
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BC250
BC250
transistor bc250
transistor bc 102
BC 250
transistor bc 100
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP621,TLP621-2JLP621-4 TOSHIBA PHOTOCOUPLER T L P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO G RAM M ABLE CONTROLLER A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor
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TLP621
TLP621-2JLP621-4
TLP621,
TLP621-2
TLP621-4
TLP621
TLP621-2
TLP621-4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2629
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TLP521
Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
Text: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.
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TLP521
TLP521-2JLP521
TLP521-1,
TLP521-2,
TLP521-4
TLP521-2
TLP521-4
2500Vrms
UL1577,
TLP521-1
Toshiba tlP521 Photocoupler
tlp521 Photocoupler
TLP521-2GB
TLP521 gr
TLP521-1GB
TLP521-2 gr
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2sc4525
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC4525 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2 S C 4 5 2 5 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65G H z. FEATURES • • High power gain: G p b ^ 6.0dB, P0 = 2 0W
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2SC4525
2SC4525
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,
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2SC3020
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