TRANSISTOR C 245 B Search Results

TRANSISTOR C 245 B Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR C 245 B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Te m ic TELEFUNKEN Semiconductors Mounting Instructions General Sem iconductor devices can be m ounted in any position. If the diam eter o f the term inal leads is less than 0.5 mm, bending o f leads is allow ed at least 1.5 mm aw ay from the sem iconductor body header . Bending should be	OCR Scan		PDF
transistor C 245 b Abstract: TRANSISTOR BI 185 SF245 245 transistor VEB Kombinat Scans-048 transistor AE DSAGER00063 Text: Vorläufige technische Daten SF£ 245 SUizium-npn-Spitaxie-Planar-Traxusisfeor im hybridgerechben Miniafeurplasbgehäuse für den Einsatz als Hf-Versbärker in Bmibfeeraclial fcung Grenzwerte, gültig für den Betriebstemperaturbereich 4-0 V ü010 25 ¥ UEB0	OCR Scan	E3902A0 III/18/397 transistor C 245 b TRANSISTOR BI 185 SF245 245 transistor VEB Kombinat Scans-048 transistor AE DSAGER00063	PDF
transistor BF 245 Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245 Text: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages	OCR Scan	BF245 CB-76 C22ss 300/is transistor BF 245 bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245	PDF
HALL EFFECT 21E Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr Text: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original		PDF
BLU98 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	BLU98 OT-103) OT-103. bb53T31 BLU98	PDF
L0025 Abstract: LF2802A f10 transistor Text: A títcor. W an AMP company RF MOSFETPower Transistor, 2W, 28V 500-1000 MHz LF2802A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	OCR Scan	LF2802A L0025 LF2802A f10 transistor	PDF
PBSS302NX Abstract: PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267 Text: Ultra low VCEsat BISS transistors in SOT89 (SC-62) 5.3 A continuous collector current in small medium power package Looking to reduce power consumption and create smaller end products? Then look no further than NXP ultra low VCEsat (BISS) transistors in SOT89 (SC-62). Housed in a medium-power package, these	Original	SC-62) transistorsinSOT89 3Acontinuousand10 ackagesizeSOT89 PBSS306PX PBSS302NX PBSS301NX PBSS303NX PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS4520X PBSS4540X mse267	PDF
transistor BD 246 Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A	OCR Scan	BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments	PDF
ASI10538 Abstract: ASI3001 Text: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is a common base transistor capable of providing 1 W Class-C RF output power @ 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.5 dB typ. at 1.0 W / 3,000 MHz	Original	ASI3001 ASI10538 ASI3001	PDF
UF2840G Abstract: transistor C 245 b Text: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n	OCR Scan	UF2840G 72APACITOR 1000pF 2-500pF 500pF UF2840G transistor C 245 b	PDF
MSC3003 Abstract: No abstract text available Text: MSC3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 6.0 dB min. at 3 W / 3,000 MHz	Original	MSC3003 MSC3003	PDF
BLU98 Abstract: L9 transistor transistor 4312 International Power Sources Planar choke SOT-103 transistor SOT103 l4 tam philips capacitor cross reference sot103 Text: PHILIPS INTERN A T I O N A L bSE T> m 711DÖSL GOtSTÖD 732 BLU98 IPHIN X U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 9 0 0 M Hz band. Features: • emitter-ballasting resistors fo r an optim um temperature profile	OCR Scan	G0ti27Ã BLU98 OT-103) OT-103. 7Z92503 711002b BLU98 L9 transistor transistor 4312 International Power Sources Planar choke SOT-103 transistor SOT103 l4 tam philips capacitor cross reference sot103	PDF
6AM12 Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15 Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching	OCR Scan	10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 SP-12 6AM11 2SK970 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1	PDF
transistor BD 246 Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241 Text: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A	OCR Scan	BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241	PDF

ZTX1053A Abstract: BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12 Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A t1 140 D=t1 tp D=0.2 D=0.1 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu 60 0.50 C B 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible ra pe 80 m te D=0.5 0.75 t en bi tp 120 Am	Original	ZTX1053A 100ms NY11725 ZTX1053A BF 245 A spice ztx1053a datasheet NC176 BF600 bf 245 spice 1053A ZTX1053 zetex transistor to92 21E12	PDF
BU218 Abstract: 2N3419 2N3421 BFX34 BSV64 BUX34 BUY80 BUY81 BUY82 BUY90 Text: NPN HIGH CURRENT SWITCHING TABLE11 NPN SILICON PLANAR HIGH C U R R E N T SW ITCHING T R A N S IS T O R S The transistors show n in this table are designed for high current, high dissipation switching applications in Industrial and M ilitary equipments. This table should be referred to in conjunction w ith the LF Power Transistor Product Guide	OCR Scan	BUY82 10igh BUY92 BUY91 BUY90 BUY81 BUY80 BU218 2N3419 2N3421 BFX34 BSV64 BUX34 BUY80	PDF
BDX 241 Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137 Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A	OCR Scan	BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137	PDF
2N3419 Abstract: 2N3421 BFX34 BSV64 BUX34 BUY81 BUY82 BUY90 BUY91 BUY92 Text: NPN HIGH CURRENT SWITCHING TABLE 11- N P N SILICON PLANAR HIGH CURRENT SW ITCHING TRANSISTORS The transistors shown in this table are designed fo r high current, high dissipation sw itching applications in Industrial and M ilitary equipm ents. This table should be referred to in conjunction w ith the LF Power Transistor Section w hich contains full	OCR Scan	11-NPN BUY82 BUY92 BUY91 BUY90 2N4036 2N4037 TP-39 2N3419 2N3421 BFX34 BSV64 BUX34 BUY81	PDF
Untitled Abstract: No abstract text available Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for	Original	MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11,	PDF
2N4001 Abstract: BUY80 2N3419 BUY82 BUY90 TRANSISTOR G13 2n4037 ferranti bfx34 bux34 BFX34 BSV64 Text: NPN HIGH CURRENT SWITCHING < TABLE 11- N P N SILICON PLANAR HIGH CURRENT SW ITCHING TRANSISTORS The transistors shown in this table are designed for high current, high dissipation switching applications in Industrial and Military equipments. This table should be referred to in conjunction with the LF Power Transistor Section which contains full	OCR Scan	11-NPN BUY82 BUY80 BUY81 BUY90 BUY91 BUY92 2N4001 2N3419 TRANSISTOR G13 2n4037 ferranti bfx34 bux34 BFX34 BSV64	PDF
C945 Abstract: transistor c945 fscq765rt c945 applications c945 transistor C945 NPN transistor c945 data c945 application FSCQ965RT TRANSISTOR c945 y Text: KSC945 KSC945 Audio Frequency Amplifier & High Frequency OSC. • • • • Complement to KSA733 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz TYP Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)	Original	KSC945 KSA733 300MHz I4146: AN-4149: KSC945CGBU KSC945CGTA KSC945CLTA KSC945COTA C945 transistor c945 fscq765rt c945 applications c945 transistor C945 NPN transistor c945 data c945 application FSCQ965RT TRANSISTOR c945 y	PDF
2005Z Abstract: TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B Text: Reliability Qualification Report SPA-2318 - SnPb Plated SPA-2318Z - Matte Sn, RoHS compliant Products Qualified by Similarity SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z SPA-2118Z SXA-3318BZ The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for	Original	SPA-2318 SPA-2318Z SPA-1118 SPA-1218 SPA-1318 SPA-2118 SXA-3318B SPA-1118Z SPA-1218Z SPA-1318Z 2005Z TRANSISTOR a105 a105 transistor 2005 Z 2005.z SXA3318BZ JESD22-A113C spa2318z JESD22-A-102 JESD22-A104B	PDF
NTE158 Abstract: germanium pnp transistor Germanium power Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V	Original	NTE158 NTE158 300mA germanium pnp transistor Germanium power	PDF
T092 Abstract: ZTXI053A Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR I ZTXI053A ISSUE 2- JANUARY I Full characterised 1995 P data now available Ca E E-Line T092 Cnmnetible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter I ZTX1 053A I IvcBo I 150	Original	ZTXI053A 100mA* 100MHz T092 ZTXI053A	PDF

TRANSISTOR C 245 B Search Results

TRANSISTOR C 245 B Result Highlights (5)

TRANSISTOR C 245 B Datasheets Context Search

Untitled

transistor C 245 b

transistor BF 245

HALL EFFECT 21E

BLU98

L0025

PBSS302NX

transistor BD 246

ASI10538

UF2840G

MSC3003

BLU98

6AM12

transistor BD 246

ZTX1053A

BU218

BDX 241

2N3419

Untitled

2N4001

C945

2005Z

NTE158

T092