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    TRANSISTOR C 3206 Search Results

    TRANSISTOR C 3206 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 3206 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAPHST0034

    Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
    Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry


    Original     		PDF MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
    Text: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation


    Original     		PDF MAPRST0912-350 35 W 960 MHz RF POWER TRANSISTOR NPN TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08

    PH2729-25M

    Abstract: j178 VCC36
    Text: PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY M/A-COM PHI, INC. OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry


    Original     		PDF PH2729-25M DS046 PH2729-25M j178 VCC36

    L-Band 1200-1400 MHz

    Abstract: No abstract text available
    Text: MICROWAVE POWER TRANSISTOR PH1214-30 • 5t,422Q5 oaaaaat, mto n/A-con p M M M /A / A -C - C iO M P H I. I N C . b3E D o h Am hap The PHI 214-30 is an internally matched high power transistor designed for long pulse or CW applications from 1200 to 1400 MHz. Internal matching both at the


    OCR Scan     		PDF PH1214-30 422Q5 L-Band 1200-1400 MHz

    Rogers 6010.5

    Abstract: epco 6010.5 T-33-J-S
    Text: n/A-con p h o 2 5E Sb4250S D QaDDSS? 311 MAP y p o MICROWAVE PULSED POWER TRANSISTOR PH1090 - 600S REV. PREUMINARY » M /A -C C M/A-COM PHI, INC. T-33'JS DESIGN CHARACTERISTICS • • • • • • Short Pulse Operation New High Efficiency Transistor Geometry


    OCR Scan     		PDF Sb4250S PH1090 ATC100A 9BC155H050KDADFB, D--13 Rogers 6010.5 epco 6010.5 T-33-J-S

    Untitled

    Abstract: No abstract text available
    Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors


    OCR Scan     		PDF PH2323-6 513MM) 5b422D5 00013D3

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-22 22 Watts, 2.856 GHz, 12 jlis Pulse, 10% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • High Efficiency Interdigitated Geometry


    OCR Scan     		PDF PH2856-22 TT50M50A ATC100A TRANSISTOR zo 109 ma transistor zo 109 transistor TI 310 Rogers 6010.5 PH2856

    transistor c 3206

    Abstract: transistor j7
    Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7

    T4 0450

    Abstract: transistor j8
    Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-30EL Sb42E05 Sb422DS D001177 T4 0450 transistor j8

    transistor yb

    Abstract: M220S transistor t 04 27
    Text: Afa Radar Pulsed Power Transistor PH0404-1OOEL 100 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PDF PH0404-1OOEL M220S PH0404-lOOEL 5b422DS transistor yb transistor t 04 27

    omni spectra sma

    Abstract: transistor n03 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry


    OCR Scan     		PDF PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856

    transistor 355

    Abstract: SHM-2E CC 1215
    Text: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-2 ShM2E05 transistor 355 SHM-2E CC 1215

    Untitled

    Abstract: No abstract text available
    Text: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-20 5b4220S

    VCO 1.4 GHz

    Abstract: No abstract text available
    Text: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    OCR Scan     		PDF PH3135-80M SbM250S VCO 1.4 GHz

    Untitled

    Abstract: No abstract text available
    Text: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH1090-800S 5b42E05

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH0912-5 Sb42205

    yb 0d

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-400S yb 0d

    Untitled

    Abstract: No abstract text available
    Text: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-30S 5b422G5 GQG12D5

    VCC36

    Abstract: No abstract text available
    Text: PH2729-180M Radar Pulsed Power Transistor Preliminary 180 Watts, 2.70-2.90 GHz, 100 |is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry


    OCR Scan     		PDF PH2729-180M 5b422Q5 VCC36

    Untitled

    Abstract: No abstract text available
    Text: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-75S b42205

    PT 4107

    Abstract: transistor tt 2222 Rogers 6010.5 TT 2222
    Text: M / A -C O fl P E S Z 1> H 0 SbMSEGS GOODSI^ bis • MAP sm e MICROWAVE PULSED POWER TRANSISTOR PH9612 - 75 REV. PRELIMINARY * & u / A -r < M/A-COM PHI, INC. T-33-/3 DESIGN CHARACTERISTICS • High Efficiency Transistor Geometry • Broadband 960 • 1215 MHz Operation


    OCR Scan     		PDF PH9612 T-33-/3 MD1889 ATC100A 195D555X0050F PT 4107 transistor tt 2222 Rogers 6010.5 TT 2222

    Untitled

    Abstract: No abstract text available
    Text: Aß MOSFET P o w er Transistor C R 2 6 120D Preliminary 120 Watts, 850 - 960 MHz Features • • • • • • • • Outline Drawing N-Channel Enhancement Mode Device Cellular Base Station Applications 120 Watts C W Common Source Gemini Configuration


    OCR Scan     		PDF

    transistor c 3206

    Abstract: TRANSISTOR 2SC Audio Amplifier Applications 2SC3206
    Text: SILICON NPN TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS 2SC 3206 ( A PPLIC A TIO N S ) • Black and White TV Video Output Applications. • High Voltage Switching A pplications. ■ D riv e r Stage Audio A mplifier Applications. C FEATU RES • High VCEO * VcEO — 150 V


    OCR Scan     		PDF 120MHz 92MOD transistor c 3206 TRANSISTOR 2SC Audio Amplifier Applications 2SC3206

    J-205

    Abstract: transistor j8 PH1600
    Text: Afa Satellite C om m unications Power Transistor PH 1600-7.5 7.5 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System


    OCR Scan     		PDF PH1600-7 Sb422DS 00D12bS J-205 transistor j8 PH1600