Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C 331 Search Results

    TRANSISTOR C 331 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 331 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking xa

    Abstract: XA MARKING CODE CMPTA29 sot 23 marking code c29
    Text: Central C M P T A 29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C TO R CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


    OCR Scan     		CMPTA29 OT-23 CMPTA29 100mA, 100mA 100mA 100MHz marking xa XA MARKING CODE sot 23 marking code c29 PDF

    Untitled

    Abstract: No abstract text available
    Text: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.


    OCR Scan     		PS2021 PS2021 T-41-83 J22686 PDF

    BC369

    Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
    Text: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.


    OCR Scan     		D027S43 BC369 BC368/BC369 BC369 TRANSISTOR bH Silicon Epitaxial Planar Transistor philips PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    1581m

    Abstract: nec ps2021 PS2021 M5010
    Text: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES


    OCR Scan     		PS2021 PS2021 J22686 1581m nec ps2021 M5010 PDF

    transistor NEC D 822 P

    Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA


    OCR Scan     		2SC5336 2SC3357 transistor NEC D 822 P transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic PDF

    nec ps2021

    Abstract: T-AV83 PS2021 1581m
    Text: N E C ELECTRONICS INC 3QE D • T - W* f 3 b4E7S2S 002=1^40 fl ■ PHOTO COUPLER P S 2021 PHO TO COUPLER High Isolation Voltage Single Transistor — n e p o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a GaAs light em itting diode and an NPN silicon photo transistor.


    OCR Scan     		PS2021 PS2021 J22686 nec ps2021 T-AV83 1581m PDF

    bfq34 application note

    Abstract: ON4497 BFQ34 sf 122 transistor
    Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a


    OCR Scan     		DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor PDF

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		BLY92A HF 331 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: l^asu ^E.mi-(2ond\jLcto\ (inc. C/ 4/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)237-6005 FAX: (973) 376-8960 BLY87C VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		BLY87C OT120A PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHI LIP S/DISCRETE 2SE D btaS3T31 00E05S0 3 BUK457-450B PowerMOS transistor G E N E R A L D E S C R IP T IO N Q U IC K R E F E R E N C E D A TA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		btaS3T31 00E05S0 BUK457-450B bbS3T31 PDF

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		/2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK PDF

    RXB12350Y

    Abstract: ATC capacitor
    Text: _LL N AMER P H I L I P S / D I S C R E T E ObE » • 1^53^31 0015SD7 J *] ■ RXB12350Y T-'ìl-!S' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.


    OCR Scan     		0015SD7 RXB12350Y r-33-/S" ATC capacitor PDF

    100-C

    Abstract: BUK482-60A
    Text: N AUER P H I L IP S /D IS C RE TE h'lE J> m bbSB^l DD30727 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in


    OCR Scan     		DD30727 BUK482-60A OT223 OT223. 100-C BUK482-60A PDF

    ts 4142

    Abstract: ksa634 KSC1096
    Text: SAMSUNG SEMICONDUCTOR INC 14E 0 KSA634 42 0007485 fi PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1096 • C ollector Current lc = -2 A • C ollector Dissipation PC=10W Tc =25',C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		KSA634 KSC1096 GQG77fe ts 4142 ksa634 KSC1096 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3T31 0015273 0 ObE » RZ3135B50W T -33-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 3,1 to 3,5 GHz.


    OCR Scan     		bbS3T31 RZ3135B50W 33-ia. PDF

    3004x

    Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
    Text: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna


    OCR Scan     		BFX55 BFX55 Q60206-X55 50ff1A 3004x antenna amplifiers Transistor BFX 25 63310-A Q60206-X55 PDF

    2SK67A

    Abstract: Zero-Gate Voltage Drain Current TC-1488
    Text: NEC JUNCTION FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters inches L o w zero gate voltage dra in c u rre n t: I d s s = 2 0 0


    OCR Scan     		2SK67A 500/iS J22686 2SK67A Zero-Gate Voltage Drain Current TC-1488 PDF

    RX1011B250Y

    Abstract: No abstract text available
    Text: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.


    OCR Scan     		DD1S17S RX1011B250Y VCB-50 VCE-20 0Q1S17Ã T-33-15 RX1011B250Y PDF

    transistor vergleichsliste

    Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
    Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		BUK436-60A/B BUK436 PDF

    BUK457-450B

    Abstract: T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E S5E m D bia53T31 00E05S0 3 • PowerMOS transistor BUK457-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		biaS3T31 00205S0 BUK457-450B ID/100 T0220AB PDF

    RX1214B300Y

    Abstract: No abstract text available
    Text: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.


    OCR Scan     		RX1214B300Y D01S113 RX1214B3 RX1214B300Y PDF