TRANSISTOR C 373 Search Results

TRANSISTOR C 373 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C 373 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
AVF1000 Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w Text: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks	Original	PDF	AVF1000 AVF1000 000W/1090 c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w
ic TT 2222 Abstract: BLY91A transistor 1971 transistor c 1971 transistor tt 2222 a10 transistor Text: ObE D N AMER P H I L I P S /D IS C RE TE 8 60 1 1936 D • bbS3T31 0014174 T - ? 3 ~ I BLY91A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and	OCR Scan	PDF	bbS3T31 BLY91A OT-48/2 ic TT 2222 BLY91A transistor 1971 transistor c 1971 transistor tt 2222 a10 transistor
sm 9112 Abstract: three phase generator 9110 equivalent fairchild 9112 "THREE-PHASE GENERATOR" MQS3700 micrologic IV-11 9109 DC 9112 Text: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A F A IR C H IL D C O M P A T IB L E C U R R E N T S IN K IN G LO G IC P R O D U C T O 'C TO 7 5 * C T E M P E R A T U R E RA N G E GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor M icrologic* Integrated Circuit	OCR Scan	PDF	juM3700 sm 9112 three phase generator 9110 equivalent fairchild 9112 "THREE-PHASE GENERATOR" MQS3700 micrologic IV-11 9109 DC 9112
2SA1464 Abstract: 1S955 2SC3739 Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739	OCR Scan	PDF	2SA1464 2SA1464 1S955 2SC3739
CSA1012 Abstract: CSC2562 ic 356 transistor CSA1012 Text: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562 ic 356 transistor CSA1012
D 1437 transistor Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the	OCR Scan	PDF	2SC5004 D 1437 transistor
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
fairchild micrologic Abstract: D9109 10-JK 9110 F 9109 Text: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit	OCR Scan	PDF	M3700 10--JK fairchild micrologic D9109 10-JK 9110 F 9109
transistor 131 8D Abstract: transistor k 3728 QBE+61.2+dp2 Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran	OCR Scan	PDF	BLY90 transistor 131 8D transistor k 3728 QBE+61.2+dp2
Untitled Abstract: No abstract text available Text: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50	OCR Scan	PDF	34032T7 00D2Q74
transistor L6 Abstract: BLY92C BLY92 PL 431 transistor Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	PDF	BLY92C OT-120. 7z68949 transistor L6 BLY92C BLY92 PL 431 transistor
Untitled Abstract: No abstract text available Text: / NEC ELECTRON DEVICE SILICON TRANSISTOR / 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed: t stfl < 200 rts • C om plem entary to 2SA1461 ABSOLUTE M AXIM UM RATINGS	OCR Scan	PDF	2SA1461 2SC3734 10to2D
bfq68 scattering Abstract: BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor Text: b b 5 3 ^ 3 1 P h ilip s S e m ic o n d u c to rs 0 Q 3 ]ib 5 3 437 M l AP X P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor •— BFQ68 N A ME R P H IL IP S /D IS C R E T E b *1 E I> PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A	OCR Scan	PDF	bb53T31 0031bS3 BFQ68 OT122A bfq68 scattering BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor

Untitled Abstract: No abstract text available Text: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and	OCR Scan	PDF	bb53T31 BLY91A
CSA1012 Abstract: No abstract text available Text: CSA1012, CSC2562 L CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications OlM A B C D e F G H J K L _ * M N MSN MAX 16.51 10.67 4.83 _ 0.90 1,15 ! ,40 3,75 3.88 2,29 2.79 2,54 3.43 0,56 12,70 14,73 _ 6.35	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562
CSA1012 Abstract: CSC2562 Text: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35	OCR Scan	PDF	CSA1012, CSC2562 CSA1012 CSC2562 DD011EE
SF 369 Abstract: TRANSISTOR C 369 TB531 t03 package transistor pin dimensions BUZ83 K 3911 Text: PowerMOS transistor N AUER P H IL IP S /D IS C R ET E BUZ83 OLE D • OOlMbfiE 1 ■ T - 2 1 - 1 1 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effeci power transistor in a metal envetope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ83 tb53131 7Z8388S T-39-11 hbS3T31 SF 369 TRANSISTOR C 369 TB531 t03 package transistor pin dimensions BUZ83 K 3911
2SC5012-T1 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •	OCR Scan	PDF	2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1
BDX 241 Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905 Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide	OCR Scan	PDF	T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
darlington pair transistor 1A Abstract: ECG904 alu schematic circuit with transistor Darlington pair MHO16 BT 156 transistor Text: PHILIPS E C G INC bbSSÌHfl 000350^ t 17E D ECG904 GENERAL-PURPOSE TRANSISTOR ARRAY semiconductors DIMENSIONAL OUTLINE D im e n sio n s In In c h e s and m illim eters Fof-Low -Pow sr Applications at Frequencies from D C Through the V H F Range FEATURES •	OCR Scan	PDF	ECG904 ECG904 darlington pair transistor 1A alu schematic circuit with transistor Darlington pair MHO16 BT 156 transistor
Untitled Abstract: No abstract text available Text: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP	OCR Scan	PDF	CMPT591E OT-23 CMPT491E 500mA CP705 30-August
Untitled Abstract: No abstract text available Text: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.	OCR Scan	PDF	RZ2731B45W 001SH3S 7Z24137
cis 280v Abstract: No abstract text available Text: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz UF2815B Features • • • • • • N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration	OCR Scan	PDF	UF2815B UF2815B 50OHM cis 280v

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TRANSISTOR C 373 Search Results

TRANSISTOR C 373 Result Highlights (5)

TRANSISTOR C 373 Datasheets Context Search

AVF1000

ic TT 2222

sm 9112

2SA1464

CSA1012

D 1437 transistor

2N2222A 338

y51 h 120c

fairchild micrologic

transistor 131 8D

Untitled

transistor L6

Untitled

bfq68 scattering

Untitled

CSA1012

CSA1012

SF 369

2SC5012-T1

BDX 241

darlington pair transistor 1A

Untitled

Untitled

cis 280v