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    TRANSISTOR C 4004 Search Results

    TRANSISTOR C 4004 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 4004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 8 VCC NC 1 A 2 7 BVB C 3 6 C NC 4 5 E SFH6343 NC 1 8 VCC A 2 7 NC C 3 6 C NC 4 5 E i179069 DESCRIPTION The SFH6315T/SFH6316T/SFH6343T, high speed


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    SFH6315T/SFH6316T/SFH6343T SFH6315/6 SFH6343 i179069 SFH6343) SFH6315T-HCPL0500 SFH6316T-HCPL0501 SFH6343T-HCPL0453 08-Apr-05 PDF

    SFH6343

    Abstract: SFH6343T
    Text: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 8 VCC NC 1 A 2 7 BVB C 3 6 C NC 4 5 E SFH6343 NC 1 8 VCC A 2 7 NC C 3 6 C NC 4 5 E i179069 DESCRIPTION The SFH6315T/SFH6316T/SFH6343T, high speed


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    SFH6315T/SFH6316T/SFH6343T SFH6315/6 SFH6343 i179069 SFH6315T/SFH6316T/SFH6343T, 08-Apr-05 SFH6343 SFH6343T PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C


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    SFH636 i179064 2002/95/EC 2002/96/EC SFH636 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C


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    SFH636 i179064 2002/95/EC 2002/96/EC SFH636 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 NC 1 8 VCC • Surface mountable A 2 7 BVB • Industry standard SOIC-8 footprint C 3 6 C NC 4 5 E • Compatible with infrared vapor phase reflow


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    SFH6315T/SFH6316T/SFH6343T SFH6315/6 SFH6343 SFH6343) SFH6315T HCPL0500 SFH6316T HCPL0501 SFH6343T HCPL0453 PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 NC 1 8 VCC • Surface mountable A 2 7 BVB • Industry standard SOIC-8 footprint C 3 6 C NC 4 5 E • Compatible with infrared vapor phase reflow


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    SFH6315T/SFH6316T/SFH6343T SFH6315/6 SFH6343 SFH6343) SFH6315T HCPL0500 SFH6316T HCPL0501 SFH6343T HCPL0453 PDF

    0405-1000M

    Abstract: J307
    Text: 0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull


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    0405-1000M 0405-1000M 25oC1 J307 PDF

    E6327

    Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
    Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!


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    OT-343 O-220-3-1 O-220-2-2 OT-89 OT-23 OT-23 OT-89 OT-343 SC-74 SC-79 E6327 transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327 PDF

    Untitled

    Abstract: No abstract text available
    Text: P R E C I S I O N B U L K M E T A L F O I L T E C H N O L O G Y VISHAY MODEL 1421 MIN. Hermetic Resistor Network 12 Pin Transistor Outline The 12 pin TO-8 package is suitable for ladder networks up to ten bits and other more complicated networks. It is also a good choice


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    V15X5 VTF15X10 PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


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    CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 PDF

    MRF604

    Abstract: MRF-604 MM531
    Text: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications


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    MRF604 175MHz) MRF604 MRF-604 MM531 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ32 Semiconductor Data Sheet October 1998 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This is an N -C h a n n e l e n h a n c e m e n t m ode silicon g ate pow er field effect transistor d es ig n e d for applications such as File Number 2416.1 Features


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    BUZ32 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH6941T LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet i Package Dim ensions in mm FEATURES Transistor O ptocoupler In SO T223 Package End Stackable, 1.27 m m Spacing Low C urrent Input Very High CTR, 150% Typical at lF-1 m A, VCE*0 .S V


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    SFH6941T SFH6941T PDF

    TRANSISTOR SMD MARKING CODE 7B 6 pin

    Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
    Text: BUZ 110SL Infineon t « c h n o I o g <e s SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS R DS on Id 55 V 0.01 a


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    110SL BUZ110SL P-T0220-3-1 Q67040-S4004-A2 E3045A P-T0263-3-2 Q67040-S4004-A6 E3045 TRANSISTOR SMD MARKING CODE 7B 6 pin SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 OGESbbb fl • ' T ' - 3 C| - H SGS-THOMSON BUZ20 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G TYPE BUZ20 30E S-THOMSON VDss 100 V ^DS on 0.2 SI D Id 12 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE


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    BUZ20 T10C/' PDF

    250w smps

    Abstract: BUZ353
    Text: /= 7 S G S -T H O M S O N ^7# MfgtHiimiltgTriMDfgS BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ353 500 V 0.6 fl 9.5 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C URRENT - 9.5A FOR UP TO 250W


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    BUZ353 100KHz 250w smps BUZ353 PDF

    BUZ60

    Abstract: No abstract text available
    Text: C T SGS-THOMSON ^ 7 Æ» M f f lm iit g T M O È S BUZ60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ60 400 V ^ D S o n 1.0 fi 5.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND


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    BUZ60 00A//iS BUZ60 PDF

    buz41a

    Abstract: No abstract text available
    Text: m TTERSB? GD2Thû2 b • S C S -T H O M S O N BUZ41A [i*[itt[L i g ^ [M iD S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G 30E S-THOMSON TYPE BUZ41A Voss 500 V ^DS(on) 1.5 n D •d 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION


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    BUZ41A buz41a PDF

    buz354

    Abstract: No abstract text available
    Text: F ^ J ^ 7# , S G S - T H O M S O N BUZ354 llD gl^ IlLI(gTrMD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ354 500 V 0.8 Ü 8 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C U R R E N T -8 A FOR UP TO 200W SMPS


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    BUZ354 100KHz buz354 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS


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    JDG2T73S BUZ353 100KHz O-218 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDE D Æ 7 B 7^2^237 002^723 S C S -T H O M S O N S • 'T -3 P I-W - 6 S T H 0 flS 0 N A 7 f ß * [ i § » i ( g r a i D S BUZ74A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ74A VDSS 500 V ^DS(on 4 Q Id 2 A • HIGH VOLTAGE - FOR OFF-LINE SMPS


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    BUZ74A 10OKHz OC-W33 SGS-TH0M80N PDF

    BUZ45

    Abstract: IC LA 4127 la 4127
    Text: BUZ45 33 HARRIS N-Channel Enhancem ent-M ode Power Fìeld-E ffect Transistor August 1991 Features Package T0-204AA BOTTOM VIEW • 9 .6A , 5 0 0 V • rDS on = 0 -6 fl SOURCE • S O A is P o w e r-D is sip a tio n Lim ited _ . DRAIN /(FLA N G E) • N a n o s e c o n d S w itch in g S p e e d s


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    BUZ45 T0-204AA BUZ45 IC LA 4127 la 4127 PDF