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    TRANSISTOR C 4106 Search Results

    TRANSISTOR C 4106 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 4106 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMP20P10

    Abstract: No abstract text available
    Text: SMP20P10 C X *Siliconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V BR DSS -1 0 0 rDS(ON) (O ) (A) •d 0 .2 0 -2 0 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1


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    SMP20P10 O-22QAB 10peration SMP20P10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor VN 2406L 3 DRAIN N -C h an n el — Enhancem ent Motorola Preferred Device 1 SOURCE MAXIMUM RATINGS Unit Symbol Value D rain-Source Voltage V d SS 240 Vdc D rain-G ate Voltage V d GR 60 Vdc G ate-S ource Voltage


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    2406L VN2406L GDT3773 PDF

    2SC4356

    Abstract: transistor c 4106
    Text: M ITSUBISHI SEM ICONDUCTO R SM A LL-SIG N A L TRANSISTO R 2SC4356 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION M itsubishi 2 S C 4 3 5 6 is a silicon N P N epitaxial type transistor d e sign e d relay OUTLINE DRAWING u ,mm


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    2SC4356 2SC4356 transistor c 4106 PDF

    Untitled

    Abstract: No abstract text available
    Text: National May 1996 Semiconductor" NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-C hannel e n h a n ce m e n t m o d e p o w e r fie ld effect tra n s is to rs are p ro d u ce d u s in g N a tio n a l's


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    NDS9405 PDF

    transistor c 4106

    Abstract: varta 4106 varta alkaline varta alkaline aa
    Text: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2.600 (discharge with high-resistance)


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    D-73479 transistor c 4106 varta 4106 varta alkaline varta alkaline aa PDF

    varta 4106

    Abstract: varta aa lr6 alkaline varta transistor c 4106 varta aa VARTa aa 4106 alkaline varta 4106 varta alkaline varta alkaline aa
    Text: LR 6 / AA power one Primary Alkaline Manganese Cylindrical Data Sheet Type Number 4106 Designation IEC System LR6 Zn-MnO2 Alkaline Shelf Life (Coding)* 7 years Nominal Voltage [V] Typical Capacity C [mAh] Premissible Temperature Range 1.5 2600 (discharge with high-resistance)


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    D-73479 varta 4106 varta aa lr6 alkaline varta transistor c 4106 varta aa VARTa aa 4106 alkaline varta 4106 varta alkaline varta alkaline aa PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    sm 41056

    Abstract: 32N25E TIC 136 Transistor 25C312
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    PDF

    AX688

    Abstract: 2N2907A PNP Transistor AX68 7668-LF
    Text: ykiyjxi>ki 19-0329; R e v 0, 12/94 EMftLU A "0 'jKI1 H ig h -A c c u racy, L o w -D ro p o u t L in e a r R e g u la to rs The 3.3V M AX687 autom atically shuts down whenever the o u tp u t v o lta g e d ro p s b e lo w 2.96V . An in te rn a l power-fail com parator also monitors the output and pro­


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    687/M AX689) 688/M 150pA ZTX749 T1P42 2N4403 2N2907A CMPT2907A PZT2907AT1 AX688 2N2907A PNP Transistor AX68 7668-LF PDF

    AT-41410

    Abstract: 41410 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth


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    AT-41410 AT-41410 5965-8923E RN/50 41410 NF50 S21E PDF

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 PDF

    TM 1621 lcd

    Abstract: TRANSISTOR SUBSTITUTION "TRANSISTOR SUBSTITUTION" AX1621 S05402 TPF0410 diode s0540 T 1621 MH
    Text: 19-1214; Rev 0; 7/97 D igitally Adjustable LCD Bias Supplies Output voltage can be set to a desired positive or nega­ tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con­ verter 0 A C or with a potentiometer. The MAX1620/


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    MAX1620/MAX MAX1620/ MAX1621 X1620/MAXI CT10NS MAX162Û MAX1S21 MAX1621 TM 1621 lcd TRANSISTOR SUBSTITUTION "TRANSISTOR SUBSTITUTION" AX1621 S05402 TPF0410 diode s0540 T 1621 MH PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    Diode LT 4104

    Abstract: No abstract text available
    Text: r r im m TECHNOLOGY LT1083/4/5-5 LT1083/4/5-12 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators F€ATUA€S DCSCRIPTIOn • Three Terminal Fixed 5V and 12V ■ Output Current of 3A, 5A or 7.5A ■ Operates Down to 1V Dropout ■ Guaranteed Dropout Voltage at Multiple Current Levels


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    LT1083/4/5-5 LT1083/4/5-12 LT1083 O-220 Diode LT 4104 PDF

    AT-41410

    Abstract: AT41410
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz


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    AT-41410 AT-41410 Rn/50 AT41410 PDF

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601 PDF

    Untitled

    Abstract: No abstract text available
    Text: • b H ^T O 00073*40 TAB « t l I T C » -u o o c ^ n IW IIT C I IV Irlo o O iU Central Office Interface LS/GS Advance Information 9161-002-106-NA Features Pin Connections • Transformerless 2W to 4W conversion • Line state detection outputs: - forward current


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    9161-002-106-NA 2N5657, E/M12V2FormC MH88630 PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    T1P31

    Abstract: texas instruments tip31 T1P30C Texas Instruments TIP31C TIP31C T1P-31 transistor tip31 TIP31 texas instruments tip31a TIP30
    Text: TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS JULY 1968 - R EVISED MAY 1995 • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature TO -220 PACKAGE TOP VIEW • 1 A Continuous Collector Current BC • 3 A Peak Collector Current


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    T1P31, TIP31 T1P31B, TIP31C O-220 TIP29 TIP30 TIP30A TIP30B T1P30C T1P31 texas instruments tip31 Texas Instruments TIP31C T1P-31 transistor tip31 texas instruments tip31a PDF

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


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    304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C01 HD Medium Power Surface Mount Products Motorola Preferred D evice C o m p le m e n ta ry TM O S Field E ffe c t Transistors COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS M iniM O S™ d e vice s are a n a d va n ce d s e rie s o f p o w e r M O S F E Ts


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    MMDF2C01 MMDF2C01HD PDF

    35N15E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTW35N15E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 35 AMPERES 150 VOLTS RDS on = 0-05 OHM N-Channel Enhancement-Mode Silicon Gate


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    0E-01 35N15E PDF

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


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    HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601 PDF