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    TRANSISTOR C 458 Search Results

    TRANSISTOR C 458 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 458 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms

    FMMT458

    Abstract: FMMT558
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 100ms FMMT458 FMMT558

    FMMT458

    Abstract: FMMT558 ic tba 500 DSA003671
    Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO


    Original     		PDF FMMT458 FMMT558 Vol75 100ms FMMT458 FMMT558 ic tba 500 DSA003671

    Untitled

    Abstract: No abstract text available
    Text: FMMT458 NPN Type Elektronische Bauelemente Palstic Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector Power dissipation 3 3 PCM : 0.5 W Collector Current ICM : 225 mA Collector-base voltage


    Original     		PDF FMMT458 OT-23 01-Jun-2002

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


    OCR Scan     		PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    OXF*9

    Abstract: No abstract text available
    Text: TLX* HEW LETT WSEm P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 AT-32011: AT-32033: OT-23 OT-143 AT-32033 OT-23, OXF*9

    2N4115

    Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
    Text: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP


    OCR Scan     		PDF NPWTO-111 fl35a 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346

    2N5084

    Abstract: 2N5284 FL-35A 2N4115 2N5085 2N4116 2N5002 2N5004 2N5083 2N5285
    Text: llP NPMTO-111 I s o la t e d c n llB n t n . - lt e n n . - r t ' ^ 84aa_^ 2 DIQDE TRANSISTOR CO IN C . l a f l H B 3 S E 0G0Q13S □ I Ö4D 0 0 1 2 8 ^ ——— t D1DDE TRANSISTOR CQ.J(\IC. FA X ^ 201 ^ 6 75 58 83 139-385 * 0u,8lde N V 4 N J area ca|l T O LL F R EE 800-526-4581


    OCR Scan     		PDF NPWTO-111 fl35a Tfidf\l515T0R 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 FL-35A 2N5285

    RC723DP

    Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
    Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525


    OCR Scan     		PDF /2525A /3525A /2527A /3527A 523/3523A RC723DP SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK

    0733

    Abstract: No abstract text available
    Text: BFP 81 NPN Silicon RF Transistor • For low -noise am plifiers up to 2 G H z at collector currents from 0.5 to 25 mA. E C E C C -ty p e in preparation: C E C C 50002/. E E S D : E lectro static d isch arg e sensitive device, observe handling precautions!


    OCR Scan     		PDF T-143 0733

    Transistor B C 458

    Abstract: GS 069 LF BUK637-450B buk637-450
    Text: N AMER P H ILIP S /D IS C R E TE 5SE J> • tibSB Tai □0201a7S 1 Ml PowerMOS transistor Fast Recovery Diode FET BUK637-450B T -3 ? -|S " GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK637-450B Transistor B C 458 GS 069 LF BUK637-450B buk637-450

    Transistor B C 458

    Abstract: BUK637-450B G02G
    Text: N AMER P H ILIP S /D IS C R E TE 5SE D • tibSB Tai □D201a7S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-450B T -3 ? -|S " GENERAL DESCRIPTION QUICK REFERENCE OATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF BUK637-450B Transistor B C 458 G02G

    c 458 c transistor

    Abstract: transistor UIE
    Text: r z 7 S C S -T H O M S O N ^ 7# G FAST NPN SWITCHING TRANSISTOR • VERY LOW SATURATION VOLTAGE ■ FAST TURN-OFF AND TURN-ON DESCRIPTION High speed transistor suited for low voltage applica­ tions. High frequency and efficiency converters switching regulators motor control.


    OCR Scan     		PDF BUV28 c 458 c transistor transistor UIE

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 - SEPTEMBER 1994_ FEATURES * 400 V o lt VCE0 * 0.5 A m p c o n tin u o u s c u rre n t * Ptot= 1 W a tt REFER TO Z TX 458 FOR GRAPHS E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS.


    OCR Scan     		PDF 20MHz -10mA

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    Transistor B C 458

    Abstract: c 458 c transistor 60V transistor npn 2a switching applications bd533 Transistor n 535
    Text: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO-220 • Com plem ent to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C olle ctor Base Voltage C olle ctor Em itter Voltage


    OCR Scan     		PDF BD533/535/537 BD534, BD536 BD538 O-220 BD533 BD535 BD537 Transistor B C 458 c 458 c transistor 60V transistor npn 2a switching applications Transistor n 535

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		PDF 2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking

    TRANSISTOR GB 558

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558

    2N4211

    Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
    Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP


    OCR Scan     		PDF 0D0D130 T-33-13 mDDETMI\l515TDRCCLiniC. NPNTO-63 2N1936 2N1937 2N3265 2N3266 2N3597 2N6246 2N4211 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210

    2N3867

    Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
    Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803


    OCR Scan     		PDF Efl463S2 TMI\I515TQR rc-25Â 2N3867 2N3868 2N5147 2N5149 2N5151 2N5153 2N5148 2N5150 2N5152 2N5154

    transistor 3504 npn

    Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
    Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803


    OCR Scan     		PDF Efl463S2 TMI\I515TQR rc-25Â 2N3867 2N3868 2N5147 2N5149 2N5151 2N5153 2N5148 transistor 3504 npn 2N3742 2N5150 2N5152