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    TRANSISTOR C 459 Search Results

    TRANSISTOR C 459 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 459 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		PDF NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    IRFI840G

    Abstract: No abstract text available
    Text: PD - 97114A IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • IC = 11A, TC = 100°C Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA


    Original     		PDF 7114A IRGI4061DPbF IRFI840G O-220 IRFI840G

    transistor NEC D 822 P

    Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters


    OCR Scan     		PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		PDF 2SC5004 D 1437 transistor

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    BCY69

    Abstract: BCY 69 transistor 468
    Text: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation


    OCR Scan     		PDF

    0733

    Abstract: No abstract text available
    Text: BFP 81 NPN Silicon RF Transistor • For low -noise am plifiers up to 2 G H z at collector currents from 0.5 to 25 mA. E C E C C -ty p e in preparation: C E C C 50002/. E E S D : E lectro static d isch arg e sensitive device, observe handling precautions!


    OCR Scan     		PDF T-143 0733

    PS2532

    Abstract: ps2532 optocoupler
    Text: N E C h ig h c o l l e c t o r t o e m it t e r VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES ’'2’'4. ' ' ' FEATURES_ DESCRIPTION_ • PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled


    OCR Scan     		PDF PS2532-1, PS2532L-1, 24-Hour PS2532 ps2532 optocoupler

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T m in M P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


    OCR Scan     		PDF AT-32011 AT-32033 T-32011 14dBG T-32033 OT-23 OT-143 AT-32033

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FAI L4L M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES P A C K A G E D IM E N S IO N S in millimeters • Resistors B u ilt-in TY PE R, = lO k f t R 2 = 22 k ß • C o m plem entary to F N 1 L 4 L


    OCR Scan     		PDF

    LEI-4

    Abstract: Mitsubishi transistor ve32
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE j QM200DY-HB 1Ic Collector c u rre n t.200A •V c e x Collector-em itter • hFE DC current g am . 750 . v o lta g e 600V


    OCR Scan     		PDF QM200DY-HB E80276 E80271 LEI-4 Mitsubishi transistor ve32

    TRANSISTOR J 5804 NPN

    Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
    Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.


    OCR Scan     		PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF

    nec hf 324

    Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
    Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply


    OCR Scan     		PDF 2SC5338 2SC5338 2SC4703 nec hf 324 transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 transistor lc 7822 c

    Solitron Transistor

    Abstract: No abstract text available
    Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor


    OCR Scan     		PDF 91SP311of DD01S73 C--13 Solitron Transistor

    c 1685 transistor

    Abstract: ic ca 747 transistor NEC D 822 P
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M02 LOW DISTORTION FIGURE: IM 2 = 59 dB TYP at V c e = 10 V, Ic = 50 mA IM3 = 82 dB TYP at V c e = 10 V , Ic = 50 mA


    OCR Scan     		PDF NE461M02 OT-89 NE461M02 24-Hour c 1685 transistor ic ca 747 transistor NEC D 822 P

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


    OCR Scan     		PDF 2SC5010

    bsp106

    Abstract: 3fc relay transistor marking B5 UCB756 USB002 transistor marking CS 712 transistor 459 transistor transistor C 459
    Text: Philips Components Data sheet status Product specification date of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES SYMBOL • Very low RDS on • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP106 OT223 OT223 D03bQ42 BSP106. OT223. bsp106 3fc relay transistor marking B5 UCB756 USB002 transistor marking CS 712 transistor 459 transistor transistor C 459

    AM/SSC 9500 ic data

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE428M01 NE428M01 200//m AM/SSC 9500 ic data

    Untitled

    Abstract: No abstract text available
    Text: N ational J u ly 1 9 9 6 S e m ic o n d u c t o r ” NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s T he s e N -C h a n n e l e n h a n c e m e n t m o d e e ffe c t tra n s is to rs a re p ro d u c e d


    OCR Scan     		PDF NDS8926

    EM 4093 007

    Abstract: nec 14312 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA834TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V , Ic = 7 mA


    OCR Scan     		PDF UPA834TF NE681, NE856) NE68130 NE85630 PA834TF-T1 24-Hour EM 4093 007 nec 14312 transistor

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00B3&53 IflS « A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N AMER PHILIPS/DISCRETE FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL v DS • High-speed switching


    OCR Scan     		PDF bbS3T31 BSP152 MRC210 0023ASA MRC213

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED & PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 P R O G R A M M A B L E CO N TR O LLER S A C / D C -IN P U T M O D U L E U n it in mm T E L E C O M M U N IC A T IO N , 3 Tl.1’626 Weight : 0.26g T he TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared


    OCR Scan     		PDF TLP626 TLP626) TLP626, TLP626-2 TLP626-4 UL1577 E673T 939dU 929dll

    a 1757 transistor

    Abstract: A 1952 transistors a 1757 transistor 2SA 2SC5103 transistors 2SA rohm 2sa 1757 EM 5103
    Text: 2S A 1 952 / 2 S A 1 906 / 2S A 1 757 Transistors I 2 S C 5 1 03 / 2 S C 45 96 High-speed Switching Transistor 2 S A 1 952 / 2 S A 1 906 / 2 S A 1 757 •A b s o lu te maximum ratings Ta—2813 •F e a tu re s 1) 2) 3) 4) High speed sw itching (tf ! Typ. 0 A 5 ^ s at l c = —3A )


    OCR Scan     		PDF 2SA1952 2SA1906 2SA1757 2SC5103 2SC4596 Ta--2813) 5103/2S O-220, 0Dlb713 O-220FN a 1757 transistor A 1952 transistors a 1757 transistor 2SA transistors 2SA rohm 2sa 1757 EM 5103