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    TRANSISTOR C 558 Search Results

    TRANSISTOR C 558 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 558 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vp 3082

    Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
    Text: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,


    OCR Scan     		PDF

    bc556

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556 PDF

    16 pin diagram of uln 2003

    Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
    Text: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington


    OCR Scan     		600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001 PDF

    transistor B 560

    Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560 PDF

    D 1437 transistor

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


    OCR Scan     		2SC5004 D 1437 transistor PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    Untitled

    Abstract: No abstract text available
    Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25t: Sym bol C haracteristic Collector Base Voltage Rating U nit -60 -80 V VcBO :KST55 :KST56 Collector-Em itter Voltage V VcEO :KST5S :KST56 Emitter-Base Voltage Collector Current


    OCR Scan     		KST55/56 KST55 KST56 KSP55 PDF

    TRANSISTOR C 557 B

    Abstract: BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = - 6 5 • LOW NOISE: 8C 559, BCS60 • Com plem ent to BC546 . BC 550 V ABSOLUTE MAXIMUM RATINGS Ta=25°C C hara c te ristic Sym bol C ollector Base Capacitance


    OCR Scan     		BC556/557/558/559/560 BC556, 8C559, BCS60 BC546 BC556 BC557/560 BC558/559 BC557/56Ã TRANSISTOR C 557 B BC 558 transistor transistor c 557 transistor B 560 transistor 557 b transistor bc 557 c le B 557 PNP TRANSISTOR transistor 200ma pnp bc transistor c 558 BC559 PDF

    Untitled

    Abstract: No abstract text available
    Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e


    OCR Scan     		BC558 BC556 270TYP 050TYP PDF

    BC556

    Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
    Text: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage


    Original     		BC556, BC557, BC558, BC556 BC557 BC558 270TYP 050TYP BC556 of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A PDF

    BLW81

    Abstract: No abstract text available
    Text: -^dnauator Lpioauoti, Unc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


    Original     		BLW81 BLW81 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEo= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector-Base Capacitance


    OCR Scan     		BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 PDF

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


    OCR Scan     		BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC PDF

    BC547 transistor kec

    Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
    Text: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC547 transistor kec APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548 PDF

    APPLICATION OF BC548 transistor

    Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃


    Original     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 100MHz APPLICATION OF BC548 transistor bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR for bc548 npn transistor PDF

    MRF517

    Abstract: 2761 l transistor 336 motorola OB2200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF517 The R F Line HIG H FREQUENCY NPN SILICON HIGH FREQ UENCY TRANSISTOR TRANSISTOR NPN SILICON . . . designed s p e c ific a lly fo r b roadb and a p p lic a tio n s re q u irin g lo w d is to r tio n characteristics. S p e cifie d fo r use in C A T V d is tr ib u tio n


    OCR Scan     		MRF517 MRF517 2761 l transistor 336 motorola OB2200 PDF

    APPLICATION OF BC548 transistor

    Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor
    Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ


    Original     		BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 APPLICATION OF BC548 transistor BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor for bc548 npn transistor PDF

    CT 1975 sam

    Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the


    OCR Scan     		2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BC556,B BC557,A,B,C BC558,B Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data


    Original     		BC556 BC557 BC558 150oC 625mW BC556 BC557 BC558 PDF

    transistor D 1557

    Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
    Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly


    OCR Scan     		fi235bOS GG04Q 2701-F88 transistor D 1557 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power PDF

    MRF325

    Abstract: BH rn transistor
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON


    OCR Scan     		MRF325 MRF325 BH rn transistor PDF

    transistor 2SB

    Abstract: c103 m TRANSISTOR 2SB558 c103 TRANSISTOR 2SB558-R MTT 65 A 12 N 8SD4 2SD428 2SB5580 C103 pnp
    Text: 2SB SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR 558 U n i t i n mm o • Power A m p l i f i e r A p p l i c a t i o n s JZfe&OMAX. SiWfch-c-i- ; p c = 6 0W ; Vqjjq = - l o o v 2SD488 y 7 '1 * y f i ' K i b t - t o 4 ow t Hi - P i * - r < * r y y 't n j j g k i r c ^ m r - t o


    OCR Scan     		2SD428 8SD488 -C103 300X300X1 200X200X1-5 transistor 2SB c103 m TRANSISTOR 2SB558 c103 TRANSISTOR 2SB558-R MTT 65 A 12 N 8SD4 2SB5580 C103 pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		M19500/558-02 StyleTO-86 PDF

    Untitled

    Abstract: No abstract text available
    Text: M19500/558-02+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)


    Original     		M19500/558-02 StyleTO-86 PDF