D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
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2SC5004
D 1437 transistor
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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transistor c 616
Abstract: ksp25
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V ces=KSP25: 40V KSP26:50V KSP27:60V • Collector Dissipation:Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage
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KSP25/26/27
KSP25:
KSP26
KSP27
625mW
KSP25
KSP26
KSP25
transistor c 616
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MU2030
Abstract: MU-2030 MM3726 MM3725
Text: MM3726 SILICON PNP silicon annular transistor designed for medium-current, high-speed saturated switching and core driver applications, and for complementary c ir cuitry with NPN type MM3725. C o lle c to r c o n n e c te d to ca»«> CASE 31 (TO -5)
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MM3726
MM3725.
10-SATURATION
MU2030
MU-2030
MM3726
MM3725
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1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Text: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S
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2SC5289
2SC5289
SC-61
2SC5289-T1
1.4464
NEC 3358
transistor Mu
61344
nec 8339
transistor Mu s12
nec k 4145
nec transistor k 4145
84147
ha 13473
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cl 740
Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES
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PH1600-6
Sb4250S
00DDS71
1600MHZ
21-Z12
470pF
015uF
cl 740
tss405
PO65
7w RF POWER TRANSISTOR NPN
PH1600
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2SC5012-T1
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •
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2SC5012
2SC5012-T1
2SC5012-T2
2SC5012-T1
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TRANSISTOR GB 558
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •
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2SC5013
2SC5013-T1
2SC5013-T2
TRANSISTOR GB 558
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lm 9805
Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733
Text: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s
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BLV2047
SC08b
OT468A
125108/00/04/pp12
lm 9805
LM 886 IC chip
transistor smd za 28
ferroxcube 4322
tantalum 106 h
el 817
LM 858 IC chip
BO 536
OF sk 733
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Untitled
Abstract: No abstract text available
Text: AUIRG4PH50S AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
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AUIRG4PH50S
O-247AC
O-247AC
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smd ya transistor
Abstract: TRANSISTOR BO 344 BSH203 SMD TRANSISTOR qd
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH203 P-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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BSH203
135108/00/02/pp8
smd ya transistor
TRANSISTOR BO 344
BSH203
SMD TRANSISTOR qd
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smd ya transistor
Abstract: smd AYA
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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BSH206
OT363
135108/00/02/pp8
smd ya transistor
smd AYA
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ PHP222 Dual P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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PHP222
OT96-1
SCA59
135108/00/03/pp8
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smd transistor GY
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH205 P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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BSH205
135108/00/02/pp8
smd transistor GY
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2SC2718
Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Text: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS
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2SC2718
2SA1151
Pi078
0878j22
Ki0888
2SC2718
2SA1151
47 HFK
05B2
TL 5551
eu025
PA33
3773 transistor amplifier
A0886
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CA3045
Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Text: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general
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CA3045,
CA3046
CA3046
CA3045
CA3046 equivalent
ca301b
Harris CA3046
CA3046M
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transistor smd ba rn
Abstract: sot494
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c
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IS-95.
BLV2048
OT494A
SCA61
/printrun/ed/pp15
transistor smd ba rn
sot494
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c
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IS-95.
BLV2048
OT494A
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Untitled
Abstract: No abstract text available
Text: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c
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CA3046 equivalent
Abstract: CA3046 CA3045 Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96
Text: CA3045, CA3046 S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays May 1994 March 1993 Features Description • Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2µA Max at IC = 1mA The CA3045 and CA3046 each consist of five general
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CA3045,
CA3046
CA3045
CA3046
120MHz
500MHz
CA3046 equivalent
Harris CA3046
an5296
CA3018
CA3045F
CA3046M
CA3046M96
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mechanical pressure switch
Abstract: Pressure Switches "Pressure Switches" transistor 14305
Text: Electronic pressure switches Type 616 Technical The type 616 electronic differential pressure switches measure pressure by means of highly resistant ceramic elements. An open collector transistor output accommodates loads up to 100 mA. data Either an N/C or N/O contact may be used, and the upper and lower switching point
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from
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2SC5010
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transistor d 2389
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
transistor d 2389
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TRANSISTOR C 2577
Abstract: transistor A62
Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector
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PRF957
OT323
AM062
/printrun/ed/pp14
TRANSISTOR C 2577
transistor A62
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