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    TRANSISTOR C238 Search Results

    TRANSISTOR C238 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C238 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    transistor c2383

    Abstract: C2383 c2383 transistor transistor c2383 0 A1013 transistor A1013 A1013 transistor C2383 NPN Transistor c2383 equivalent A1013 equivalent
    Text: C2383 C2383 Silicon NPN Epitaxial Transistor Description :The C2383 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to A1013 Chip Appearance Chip Size 1100umx1100um Chip Thickness 210±20um


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    C2383 C2383 A1013 1100um 1100um 240um 240um 330um 260um transistor c2383 c2383 transistor transistor c2383 0 A1013 transistor A1013 A1013 transistor C2383 NPN Transistor c2383 equivalent A1013 equivalent PDF

    A1013 transistor

    Abstract: transistor A1013 A1013 transistor c2383 a1013 pnp transistor C2383 A1013 equivalent A1013 pnp transistor c2383 0 c2383 transistor
    Text: A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size 1100umx1100um Chip Thickness 210±20um


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    A1013 A1013 C2383 1100um 1100um 240um 240um 330um 260um A1013 transistor transistor A1013 transistor c2383 a1013 pnp transistor C2383 A1013 equivalent A1013 pnp transistor c2383 0 c2383 transistor PDF

    marking code 533

    Abstract: bcr533
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor «Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R2=10ki2 XCs Pin Configuration 1 =B Q62702-C2382 Package O il CO Marking Ordering Code BCR 533 Ui II eg


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    10ki2) Q62702-C2382 OT-23 300ns; marking code 533 bcr533 PDF

    transistor C238

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2383 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2S C238 3 Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS. 5.1 M AX. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • High Voltage : V qeq = 160V • Large Continuous Collector Current Capability.


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    2SC2383 2SA1013 75MAX transistor C238 PDF

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


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    10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in resistor R-| = 2.2kÎ2, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 555 XDs Q62702-C2383 1=B Package 2=E 3=C SOT-23


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    Q62702-C2383 OT-23 10-21--------------LI------------ BH35bOS fl235b05 015CH01 PDF

    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II


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    10ki2) Q62702-C2382 OT-23 Thermal01 fi53SbQS PDF

    C2385

    Abstract: transistor c2385 transistor c2385 Data Sheet Q62702-C2385
    Text: BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ,R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    Q62702-C2385 OT-23 Nov-27-1996 C2385 transistor c2385 transistor c2385 Data Sheet Q62702-C2385 PDF

    C2382

    Abstract: Q62702-C2382 IC102
    Text: BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 533 XCs 1=B Q62702-C2382 Package 2=E 3=C SOT-23 Maximum Ratings


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    Q62702-C2382 OT-23 Nov-27-1996 C2382 Q62702-C2382 IC102 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23


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    10kii 10kii) Q62702-C2385 OT-23 PDF

    PIN CONFIGURATION IC 555

    Abstract: C2383 transistor c2383 IC 555 Q62702-C2383 c2383 transistor xds pnp datasheet of ic 555 transistor c2383 0 BR C2383
    Text: BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 2.2kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23 Maximum Ratings


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    Q62702-C2383 OT-23 Nov-27-1996 PIN CONFIGURATION IC 555 C2383 transistor c2383 IC 555 Q62702-C2383 c2383 transistor xds pnp datasheet of ic 555 transistor c2383 0 BR C2383 PDF

    transistor c2383

    Abstract: Toshiba transistor c2383 C2383 c2383 transistor transistor c2383 y transistor c2383 0 BR C2383 C2383 y C2383 NPN Transistor 2SA1013
    Text: 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 160 V • Large continuous collector current capability


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    2SC2383 2SA1013 transistor c2383 Toshiba transistor c2383 C2383 c2383 transistor transistor c2383 y transistor c2383 0 BR C2383 C2383 y C2383 NPN Transistor 2SA1013 PDF

    Toshiba transistor c2383

    Abstract: transistor c2383 c2383 transistor 2SC2383 transistor c2383 y transistor c2383 0 c2383 y
    Text: 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 160 V • Large continuous collector current capability


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    2SC2383 2SA1013 Toshiba transistor c2383 transistor c2383 c2383 transistor 2SC2383 transistor c2383 y transistor c2383 0 c2383 y PDF

    transistor c2383

    Abstract: C2383 NPN transistor ECB TO-92 500ma 1A transistor c2383 0 c2383 transistor transistor c316 BTC2383A3 C2383 y C2383 d C2383 NPN Transistor
    Text: CYStech Electronics Corp. Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features • High breakdown voltage, BVCEO≥ 200V • Large continuous collector current capability


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    BTC2383A3 BTA1013A3 UL94V-0 transistor c2383 C2383 NPN transistor ECB TO-92 500ma 1A transistor c2383 0 c2383 transistor transistor c316 BTC2383A3 C2383 y C2383 d C2383 NPN Transistor PDF

    transistor c2383

    Abstract: C2383 Toshiba transistor c2383 c2383 transistor 2SC2383 C2383 NPN Transistor transistor c2383 0 2sc2383 TRANSISTOR C2383 y 2SC2383 equivalent
    Text: 2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm • High breakdown voltage: VCEO = 160 V • Large continuous collector current capability


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    2SC2383 2SA1013 transistor c2383 C2383 Toshiba transistor c2383 c2383 transistor 2SC2383 C2383 NPN Transistor transistor c2383 0 2sc2383 TRANSISTOR C2383 y 2SC2383 equivalent PDF

    transistor c237

    Abstract: transistor C238 transistor c242 transistor c240 c238 transistor IRGBF20F
    Text: PD - 9.776A International mmRectifier IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    10kHz) IRGBF20F TQ-220AB C-242 transistor c237 transistor C238 transistor c242 transistor c240 c238 transistor IRGBF20F PDF

    transistor C239

    Abstract: transistor C238
    Text: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBF20F 10kHz) O-220AB C-241 TQ-220AB C-242 transistor C239 transistor C238 PDF

    transistor C238

    Abstract: transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor
    Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V


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    IRGBF20F 10kHz) O-220AB C-242 transistor C238 transistor c237 transistor c240 C-238 D-12 IRGBF20F transistor c242 c237 ge 239 c238 transistor PDF

    C-238

    Abstract: D-12 IRGBF20F transistor c240 transistor C238
    Text: PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 900V VCE(sat) ≤ 4.3V


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    IRGBF20F 10kHz) O-220AB C-242 C-238 D-12 IRGBF20F transistor c240 transistor C238 PDF

    transistor C239

    Abstract: C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238
    Text: Previous Datasheet Index Next Data Sheet PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBF20F 10kHz) O-220AB C-242 transistor C239 C-238 D-12 IRGBF20F transistor c237 C-237 transistor c242 transistor C238 PDF

    FX3U-48M

    Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M
    Text: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)


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    D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M PDF

    transistor c2383

    Abstract: C2383 C2383 NPN Transistor transistor c2383 0 BR C2383 c2383 y transistor c2383 y c2383 transistor
    Text: MCC TM Micro Commercial Components Features Capable of 0.9Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 160V Operating and storage junction temperature range: -55OC to +150 OC Case Material: Molded Plastic. Classification Rating 94V-0


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    2SC2383 -55OC C2383 O-92MOD 10mAdc, 100uAdc transistor c2383 C2383 C2383 NPN Transistor transistor c2383 0 BR C2383 c2383 y transistor c2383 y c2383 transistor PDF