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    TRANSISTOR C3198 Search Results

    TRANSISTOR C3198 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    C3198

    Abstract: transistor C3198 C3198 transistor C3198 Y C3198 GR C3198 BL C3198 GR transistor transistor c3198 y Elite Enterprises (H.K.) Elite Enterprises
    Text: C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC max =625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO


    Original     		PDF C3198 625mW 150mA 100mA, 30MHz C3198 transistor C3198 C3198 transistor C3198 Y C3198 GR C3198 BL C3198 GR transistor transistor c3198 y Elite Enterprises (H.K.) Elite Enterprises