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    TRANSISTOR C342 Search Results

    TRANSISTOR C342 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C342 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)


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    PDF 2SC3425

    C3425

    Abstract: transistor 2sc3425 2SC3425
    Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)


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    PDF 2SC3425 C3425 transistor 2sc3425 2SC3425

    C3425

    Abstract: 2SC3425
    Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 1.0 s (max)


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    PDF 2SC3425 C3425 2SC3425

    2sc3425

    Abstract: transistor 2sc3425
    Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs (max)


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    PDF 2SC3425 2sc3425 transistor 2sc3425

    C3425

    Abstract: 2SC3425
    Text: 2SC3425 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC3425 Industrial Applications Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 1.0 s (max)


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    PDF 2SC3425 C3425 2SC3425

    transistor c3423

    Abstract: 2sc3423 c3423 transistor c3423 Y 2Sc3423 TRANSISTOR 2SA1360
    Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)


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    PDF 2SC3423 2SA1360 transistor c3423 2sc3423 c3423 transistor c3423 Y 2Sc3423 TRANSISTOR 2SA1360

    transistor c3423

    Abstract: 2sc3423 transistor c3423 Y c3423 transistor 2Sc3423 TRANSISTOR
    Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)


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    PDF 2SC3423 2SA1360 transistor c3423 2sc3423 transistor c3423 Y c3423 transistor 2Sc3423 TRANSISTOR

    transistor c3423

    Abstract: C3423 transistor c3423 Y 2sc3423 2SA1360 c3423 transistor
    Text: 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3423 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.)


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    PDF 2SC3423 2SA1360 transistor c3423 C3423 transistor c3423 Y 2sc3423 2SA1360 c3423 transistor

    C3422

    Abstract: 2SC3422 2SA1359
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


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    PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359

    C3422

    Abstract: 2SC3422 2SA1359
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


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    PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359

    c3421 transistor

    Abstract: c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Maximum Ratings (Tc = 25°C)


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    PDF 2SC3421 2SA1358 c3421 transistor c3421 2SC3421 transistor c3421 2SA1358 C3421 TOSHIBA

    c3422

    Abstract: No abstract text available
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


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    PDF 2SC3422 2SA1359. c3422

    C3422

    Abstract: 2SC3422 2SA1359 C342-2
    Text: 2SC3422 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3422 Audio Frequency Power Amplifier Low-Speed Switching Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SA1359.


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    PDF 2SC3422 2SA1359. C3422 2SC3422 2SA1359 C342-2

    c3421 transistor

    Abstract: C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Tc = 25°C)


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    PDF 2SC3421 2SA1358 c3421 transistor C3421 TOSHIBA c3421 transistor c3421 2SA1358 2SC3421

    c3421 transistor

    Abstract: c3421 2SA1358 2SC3421
    Text: 2SC3421 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3421 Audio Frequency Power Amplifier Applications • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC3421 2SA1358 c3421 transistor c3421 2SA1358 2SC3421

    c3420 transistor

    Abstract: C3420 Bl c3420 2SC3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


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    PDF 2SC3420 c3420 transistor C3420 Bl c3420 2SC3420

    c3420 transistor

    Abstract: C3420 2SC3420 Bl c3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)


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    PDF 2SC3420 c3420 transistor C3420 2SC3420 Bl c3420

    C3420

    Abstract: c3420 transistor 2SC3420 Bl c3420
    Text: 2SC3420 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3420 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • High DC current gain : hFE = 140 to 600 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)


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    PDF 2SC3420 C3420 c3420 transistor 2SC3420 Bl c3420

    transistor c345

    Abstract: transistor c343 smd c345 transistor c342 g10 smd transistor AN-994 D-12 IRGBC30M-S SMD-220 ic smd 342
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1133 IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC30M-S 10kHz) SMD-220 C-346 transistor c345 transistor c343 smd c345 transistor c342 g10 smd transistor AN-994 D-12 IRGBC30M-S SMD-220 ic smd 342

    transistor c342

    Abstract: C342 C342-0464 Veeder-Root 7 digit 7 segment lcd display Veeder-Root brand Counter Model Programing l.E.D message display C3420 C342-0462 8 digit lcd display
    Text: VEEDER-ROOT brand Electronic Totalizing Counters C342 Totalizing Counter 1 E L E C T R O N I C Ultra-compact 1/32 DIN totalizers… available with LCD or LED display and AC/DC inputs T O T A L I Z I N G All in the family - Matching C342 series products in other sections of this catalog:


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    PDF See32 C342-0464, transistor c342 C342 C342-0464 Veeder-Root 7 digit 7 segment lcd display Veeder-Root brand Counter Model Programing l.E.D message display C3420 C342-0462 8 digit lcd display

    LE C346

    Abstract: No abstract text available
    Text: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC30M-S 10kHz) SMD-220 C-346 4flS54S2 002013b LE C346

    transistor c342

    Abstract: LE C346 c342
    Text: P D -9.1133 International IMI Rectifier IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF 10kHz) IRGBC30M-S SMD-220 C-346 transistor c342 LE C346 c342

    10-20l

    Abstract: SOP8 npn Transistor Package SOP8 PNP Transistor Package
    Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Advance Information SCSI-2 Active Terminator Regulator Series SCSI-2 THREE-TERMINAL VOLTAGE REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The M C34268 is a medium current, low dropout positive voltage regulator specifically designed for use in SCSI-2 active termination circuits. This device


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    PDF C34268 MC34268 10-20l SOP8 npn Transistor Package SOP8 PNP Transistor Package

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR h h h h MC34268 h TECHNICAL DATA Advance Information SCSI-2 Active Terminator Regulator Series SCSI-2 THREE-TERMINAL VOLTAGE REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The M C34268 is a medium current, low dropout positive voltage regulator


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    PDF MC34268 C34268 MC34268