TRANSISTOR C639 W Search Results

TRANSISTOR C639 W Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C639 W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor C639 Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGP430UD2 O-247AC C-640 transistor C639 C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
c638 transistor Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635 Text: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz	Original	PDF	IRGP430UD2 O-247AC C-640 c638 transistor C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
TRANSISTOR D2102 Abstract: L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS Text: TX-28/25/21MD4 Service Manual Safety Specifications Service Support Block Diagrams Parts List Service Information Adjustments Self Check Schematic Diagrams Service Hints Mechanical View Waveforms Supplementary Information This interface provides a link between the TV and	Original	PDF	TX-28/25/21MD4 TZS6EZ002 TZS7EZ006 TZS7EZ005 TRANSISTOR D2102 L3003 TRANSISTOR ETP35KAN619U L3005 TRANSISTOR 1SR124-4AT82 transistor D454 D362 TRANSISTOR l3007 ma29ta5 TELEVISION EHT TRANSFORMERS
C2625 transistor Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855 Text: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount	Original	PDF	C300-C4700, C5600-C5800 C2625 transistor C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
c63916 Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 bc639 nxp c639 equivalent Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA	Original	PDF	BC639; BCP56; BCX56 BC639 SC-43A BC640 BCP56 OT223 SC-73 BCP53 c63916 c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 nxp c639 equivalent
Alc201A Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN	Original	PDF	852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
transistor C639 Abstract: transistor C635 c639 transistor C639 w Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635	OCR Scan	PDF	BC635/637/639 BC635/638/640 BC635 BC637 BC639 transistor C639 transistor C635 c639 transistor C639 w