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    TRANSISTOR CB 308 Search Results

    TRANSISTOR CB 308 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CB 308 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    y-parameter

    Abstract: common base amplifier circuit designing FPNH10 TRANSISTOR C 3223
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    PDF FPNH10 y-parameter common base amplifier circuit designing FPNH10 TRANSISTOR C 3223

    NPN rf transistor

    Abstract: FPNH10
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    PDF FPNH10 NPN rf transistor FPNH10

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    PDF FPNH10

    TF135

    Abstract: bf308
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


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    PDF FPNH10 TF135 bf308

    11KW 3 phase motor

    Abstract: temperature dependent dc fan speed control by using thermistor heat sensor 2N4400 MC642 MC642DR2 MC642P MPS2222 MPS2222A three phase 18kW motor 2N4401 NPN Switching Transistor
    Text: MC642 PWM Fan Speed Controller with Fault Detection The MC642 is a pulse width modulation PWM fan speed controller for use with DC motors. It provides temperature proportional speed control. A thermistor connected to the VIN input furnishes the required control voltage of 1.25V to 2.65V for 0% to


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    PDF MC642 MC642 r14525 MC642/D 11KW 3 phase motor temperature dependent dc fan speed control by using thermistor heat sensor 2N4400 MC642DR2 MC642P MPS2222 MPS2222A three phase 18kW motor 2N4401 NPN Switching Transistor

    transistor 2n2222a to-92

    Abstract: 2N4400 MC642 MC642DR2 MC642P MPS2222 MPS2222A NPN transistor 2n4400 beta value
    Text: MC642 PWM Fan Speed Controller with Fault Detection The MC642 is a pulse width modulation PWM fan speed controller for use with DC motors. It provides temperature proportional speed control. A thermistor connected to the VIN input furnishes the required control voltage of 1.25 V to 2.65 V for 0% to


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    PDF MC642 MC642 r14525 MC642/D transistor 2n2222a to-92 2N4400 MC642DR2 MC642P MPS2222 MPS2222A NPN transistor 2n4400 beta value

    Thermistor NTC-10

    Abstract: PTC 1k thermistor conversion table 2N4401 NPN Switching Transistor missing pulse detector
    Text: MC642 PWM Fan Speed Controller with Fault Detection The MC642 is a pulse width modulation PWM fan speed controller for use with DC motors. It provides temperature proportional speed control. A thermistor connected to the VIN input furnishes the required control voltage of 1.25 V to 2.65 V for 0% to


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    PDF MC642 MC642 r14525 MC642/D Thermistor NTC-10 PTC 1k thermistor conversion table 2N4401 NPN Switching Transistor missing pulse detector

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    TRANSISTOR BC 213

    Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    EN3083

    Abstract: No abstract text available
    Text: Ordering number: EN3083 FC 115 No.3083 SANYO, PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 10kft,R2 = lOkQ • Composite type with 2 transistors contained in the CP package currently in use, improving the


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    PDF EN3083 10kft FC115 2SA1344, EN3083

    Untitled

    Abstract: No abstract text available
    Text: Ordering n u m b e r:E N 3 0 8 4 N o.3084 _ F C 1 1 6 N P N E pitaxial Planar Silicon Composite T ransistor Switching Applications Features • On-chip bias resistors Ri = 10kQ,R2 = lOkfi •Composite type with 2 transistors contained in the CP package currently in u se, im p rovin g the


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    PDF FC116 2SC3398,

    TYP 513 309

    Abstract: GE-514
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309


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    PDF BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514

    fr 309

    Abstract: BC307 309 T BC239 BC309
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


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    PDF BC307/308/309 BC309 BC307 BC308/309 BC308/309 fr 309 BC307 309 T BC239 BC309

    BC307

    Abstract: No abstract text available
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


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    PDF BC307/308/309 BC309 BC307 BC308/309 BC307

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 3080 F C 112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 22kft,R2 = 22k£2 • Composite type with 2 transistors contained in the CP package currently in use, improving the


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    PDF 22kft FC112 2SC3396,

    NFA 220

    Abstract: TB6526F transistor truth table p j 85 diod
    Text: TOSHIBA TENTATIVE TB6526F TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC TB6526F CHOPPER-TYPE BIPOLAR STEPPING MOTOR CONTROL DRIVER 1C The TB6526F is a PWM chopper-type sinusoidal micro-step bipolar stepping motor driver 1C. It is capable of 1-2 and 2W1-2 phase excitation modes


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    PDF TB6526F TB6526F SSOP24-P-300-1 SSQP24-P-300-1 961001EBA1 NFA 220 transistor truth table p j 85 diod

    pulse h1251

    Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
    Text: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common


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    PDF MPSH10 MMBTH10 1000pF bSD113D pulse h1251 H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


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    PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE bbS3^31 D0Efle 4cJ m BLV25 D IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. Features: • internally matched input fo r wideband operation and high power gain;


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    PDF BLV25