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    TRANSISTOR CD 4400 Search Results

    TRANSISTOR CD 4400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CD 4400 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    TRANSISTOR 2N 4401

    Abstract: transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401
    Text: HN/2N 4400/4401 NPN EPITAXIAL SILICON TRANSISTOR General purpose transistor Collector Emitter Voltage: VCE0 = 40V Collector Dissipation: Pc max = 625mW On special request, these transistors can be manufactured in different pin configurations. Please refer to the “TO-92


    OCR Scan     		625mW TRANSISTOR 2N 4401 transistor 4400 4401 transistor 2N4400 2N4401 4401 NPN 4401 transistor transistor 2n transistor 4401 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 PDF

    marking code 439

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 • Self-aligned process entirely ion implanted


    OCR Scan     		OT440A LTE21025R OT44QA marking code 439 PDF

    darlington optocoupler cross reference

    Abstract: sot229 OPTOCOUPLER dc 4N46 optocoupler LP 250 OPTOCOUPLER dc 1ma optocoupler NPN
    Text: D E V E L O P M E N T DATA • bfaS3*131 o a a i n s _ 3 ■ 11 T h is data sheet contain* advance Inform ation and specifications are subject to change w ith o u t n o tice. 4N46 I I N AMER P H I L I P S / D I S C R E T E


    OCR Scan     		OT229 T-41-85 tr-tf-16iw darlington optocoupler cross reference sot229 OPTOCOUPLER dc 4N46 optocoupler LP 250 OPTOCOUPLER dc 1ma optocoupler NPN PDF

    stepping motor EPSON EM - 234

    Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
    Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A PDF

    schematic diagram analog tv tuner rca

    Abstract: dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017
    Text: ORDER NO.DSD0503040C2 DVD Video Recorder DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG Vol.1 Colour K .Black Type (S).Silver Type 2005 Matsushita Electric Industrial CO., Ltd. All rights reserved. Unauthorized copying and


    Original     		DSD0503040C2 DMR-EH50EB DMR-EH50EG DMR-EH50EP DMR-EH52EG schematic diagram analog tv tuner rca dsc r3918 IC3001 jvc hdd motor c1507 transistor B0ACCK000005 c4060 transistor B3RAD0000092 C1518 transistor C0DACZH00017 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Data Sheet SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process


    Original     		SBA-4089 SBA-4089 1950MHz EDS-102822 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA4089Z OT-89 SBA4089Z DS111204 SBA-4089 SBA-4089Z PDF

    BA5 marking

    Abstract: SBA-5089 marking ba5 BA5 Amplifier class d rf power amplifier
    Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with


    Original     		SBA-5089 SBA-5089 1950MHz EDS-102743 BA5 marking marking ba5 BA5 Amplifier class d rf power amplifier PDF

    vqe 24 e

    Abstract: bt 1840 vqe 24 d vqe 14 E MHPM7A12A120A VQE 24 AE 1600-S LP12A sc 8256 diode e4f
    Text: MOTOROLA Order this documents by MHPM7A12A120A/D SEMICONDUCTOR TECHNICAL DATA H y b rid P o w e r M o d u le MHPM7A12A120A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10S120DC3)


    OCR Scan     		MHPM7A12A120A/D MHPM7A10S120DC3) b3b72SS G1GG204 vqe 24 e bt 1840 vqe 24 d vqe 14 E MHPM7A12A120A VQE 24 AE 1600-S LP12A sc 8256 diode e4f PDF

    SBA-5089

    Abstract: No abstract text available
    Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with


    Original     		SBA-5089 SBA-5089 EDS-102743 PDF

    SBA-5089Z

    Abstract: sba5089z
    Text: SBA5089Z SBA5089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA5089Z OT-89 SBA5089Z DS111204 SBA-5089 SBA-5089Z SBA-5089Z PDF

    sba4089z

    Abstract: sba-4089z
    Text: SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA4089Z OT-89 SBA4089Z DS111204 SBA-4089 SBA-4089Z sba-4089z PDF

    SBA-4089

    Abstract: S1-101 BA433 ba4 transistor
    Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with


    Original     		SBA-4089 SBA-4089 1950MHz EDS-102822 S1-101 BA433 ba4 transistor PDF

    BA5 Amplifier

    Abstract: GSM/BA5 Amplifier marking ba5 class d rf power amplifier
    Text: Advanced Data Sheet SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process


    Original     		SBA-5089 SBA-5089 EDS-102743 BA5 Amplifier GSM/BA5 Amplifier marking ba5 class d rf power amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA-4089 OT-89 areBA-4089 SBA4089â SBA4089Zâ SBA-4089Z SBA-4089 EDS-102822 PDF

    Untitled

    Abstract: No abstract text available
    Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA-5089 OT-89 areA-5089 SBA5089â SBA5089Zâ SBA-5089Z SBA-5089 EDS-102743 PDF

    BA4Z

    Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
    Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA-4089 OT-89 Matching-5570 SBA4089" SBA4089Z" SBA-4089Z SBA-4089 BA4Z sba4089 sba-4089z InP transistor HEMT sot 163 Package PDF

    BA5Z

    Abstract: BA5 marking marking ba5 sba5089 SBA-5089 sba-5089z MMIC "SOT89" marking CODE h marking sba marking code ba5
    Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal


    Original     		SBA-5089 OT-89 Matching5570 SBA5089" SBA5089Z" SBA-5089Z SBA-5089 BA5Z BA5 marking marking ba5 sba5089 sba-5089z MMIC "SOT89" marking CODE h marking sba marking code ba5 PDF

    LBC7

    Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
    Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,


    Original     		7to30V LBC7 BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st LBC7 RONA free transistor e2p PDF

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: CHIP capacitor cross reference panasonic transistor cross array resistor bourns CD1005 KOA Chip Resistors Packaging rohm cross TVS diode micro MELF Bourns resistors CD1005-B00340
    Text: Networks Application Note Designer’s Guide to Chip Resistors, Chip Diodes, & Power Chokes For Power Supplies & DC-DC Converters Industry: Telecommunication, Computer, Industrial, Automotive Application: DC-DC Converters in Power Supplies Statement of the Problem:


    Original     		e/N0406 TRANSISTOR REPLACEMENT GUIDE CHIP capacitor cross reference panasonic transistor cross array resistor bourns CD1005 KOA Chip Resistors Packaging rohm cross TVS diode micro MELF Bourns resistors CD1005-B00340 PDF