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    TRANSISTOR CEP703AL Search Results

    TRANSISTOR CEP703AL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    CEP703AL

    Abstract: ceB703 10V Schottky Diode ceb703al
    Text: CEP703ALS2/CEB703ALS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		CEP703ALS2/CEB703ALS2 CEP703ALS2/CEB703AL2 CEP703AL ceB703 10V Schottky Diode ceb703al PDF

    TRANSISTOR cep703al

    Abstract: CEP703AL ceb703al A3525 CEP703
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		CEP703AL/CEB703AL TRANSISTOR cep703al CEP703AL ceb703al A3525 CEP703 PDF

    CEP703AL

    Abstract: TRANSISTOR cep703al ceb703al
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		CEP703AL/CEB703AL O-220 O-263 CEP703AL TRANSISTOR cep703al ceb703al PDF

    CEP703AL

    Abstract: TRANSISTOR cep703al
    Text: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.


    Original     		CEP703AL/CEB703AL O-220 O-263 CEP703AL TRANSISTOR cep703al PDF

    cep703al

    Abstract: TRANSISTOR cep703al ceb703al CEP- 83 A
    Text: CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		CEP703AL/CEB703AL O-220 O-263 cep703al TRANSISTOR cep703al ceb703al CEP- 83 A PDF

    CEP703AL

    Abstract: TRANSISTOR cep703al B703A P4010 B703AL ceb703al P703 B703
    Text: CEP703AL/CEB703AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 4 0 A , R ds on =1 7mQ @V g s =1 0V. RDS(ON)=30mQ @ V g s =4.5V. • Super high dense cell design for extremely low R ds (on ). • High power and current handling capability.


    OCR Scan     		CEP703AL/CEB703AL O-22Q O-263 to-263 t0-220 P703AL/CE B703AL CEP703AL TRANSISTOR cep703al B703A P4010 B703AL ceb703al P703 B703 PDF

    B703A

    Abstract: GS109 P703
    Text: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage


    OCR Scan     		CEP703ALS2/CEB703ALS2 B703A GS109 P703 PDF