TRANSISTOR CIRCUITS Search Results

TRANSISTOR CIRCUITS Result Highlights (5)

Part	Manufacturer	Description
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK421G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

TRANSISTOR CIRCUITS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
transistor Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor	Original	X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list	PDF
IC-3479 Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits	Original	PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH	PDF
PA1476 Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134	PDF
ic 8705 Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213	PDF
DARLINGTON MANUAL Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202 Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1436 PA1436 PA1436H DARLINGTON MANUAL pa1436ah uPA1436H iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202	PDF
uPA1456H Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1456 PA1456 PA1456H uPA1456H IC-3521 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY	PDF
pa1437 Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1437 PA1437 PA1437H IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
2SD2165 Abstract: NEC marking b Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and	Original	2SD2165 2SD2165 NEC marking b	PDF
2SD2164 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and	Original	2SD2164 2SD2164	PDF
2SD2165 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and	Original	2SD2165 2SD2165	PDF
2SD2165 Abstract: nec transistor Transistor NEC 30 Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and	Original	2SD2165 2SD2165 nec transistor Transistor NEC 30	PDF
DUAL TRANSISTOR Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES Two MMBT2907A chips in an SMT package. Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA EQUIVALENT CIRCUITS	Original	IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR	PDF

Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	400mA M54583WP 400mA) M54583 Jul-2011 Jun-2011	PDF
M63828DP Abstract: 16PIN M63828WP 16P4X-A IL500 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500	PDF
M54523 Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) M54523 pnp 8 transistor array 18P4G 20P2N-A M54583 8 pin 4v power supply ic	PDF
M54583FP Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54583P/FP 400mA M54583P M54583FP M54583P 400mA) pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 pnp 8 transistor array	PDF
IL500 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN IL500	PDF
M54522 Abstract: m54566 M54566WP Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54566WP 400mA M54566WP 400mA) M54522 m54566	PDF
8 pin 4v power supply ic Abstract: Seven Transistor Array PNP M54222 M54566FP M54566P pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor	Original	M54566P/FP 400mA M54566P M54566FP 400mA) 8 pin 4v power supply ic Seven Transistor Array PNP M54222 pnp 8 transistor array pnp DARLINGTON TRANSISTOR ARRAY PNP DARLINGTON ARRAYS	PDF
18P4G Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array" Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP	Original	M54562P/FP 500mA M54562P M54562FP 500mA) 18P4G 20P2N-A pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"	PDF
M54522 Abstract: M54566DP Seven Transistor Array PNP m54566 Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated	Original	M54566DP 400mA M54566DP 400mA) Jul-2011 M54522 Seven Transistor Array PNP m54566	PDF
M63827DP Abstract: M63827WP 16PIN 16P4X-A IL500 Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made	Original	M63827WP/DP 500mA M63827WP M63827DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500	PDF

TRANSISTOR CIRCUITS Search Results

TRANSISTOR CIRCUITS Result Highlights (5)

TRANSISTOR CIRCUITS Datasheets Context Search

MCT8 opto

transistor

IC-3479

PA1476

ic 8705

DARLINGTON MANUAL

uPA1456H

pa1437

MN1280

2SD2165

2SD2164

2SD2165

2SD2165

DUAL TRANSISTOR

Untitled

M63828DP

M54523

M54583FP

IL500

M54522

8 pin 4v power supply ic

18P4G

M54522

M63827DP