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    TRANSISTOR CODE 1Z Search Results

    TRANSISTOR CODE 1Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CODE 1Z Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd transistor 2f

    Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
    Text: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.


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    Tap15 FTO-220 S10VB S15VB S15VBA S25VB S50VB S10WB S15WB S20WB smd transistor 2f 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z PDF

    BUP101

    Abstract: bup transistor A 671 transistor
    Text: • 823SbD5 QDSlBb^ 2 O S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF 47E I> r-3 3 -13 BUP101 SIRET Siemens Ring Emitter Transistor VGe = 1000 V /0 =15 A • N channel • Breakdown-proof • Package: TO-218 AA TO P-3 1) Type Ordering code B U P 101 C 6 7 060-A 1000-A 2


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    823SbD5 QDS13bci BUP101 O-218 C67060-A1000-A2 01234s6789a10 r-33-/3 BUP101 bup transistor A 671 transistor PDF

    smd TRANSISTOR 27e

    Abstract: TRANSISTOR SMD a38 smd 27E
    Text: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.


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    QQ03M37 CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z CNY17 CNY17F1: CNY17F2: CNY17F3: E50151 ii54i smd TRANSISTOR 27e TRANSISTOR SMD a38 smd 27E PDF

    transistor 41 74t

    Abstract: smd TRANSISTOR 27e
    Text: d U A L I T Y - T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E ì> 74bhfl51 □ □ □ 3 5 5 1 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS _ T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z PACKAGE DIMENSIONS ifil DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide


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    74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e PDF

    Untitled

    Abstract: No abstract text available
    Text: JUALÌTY TE CHNOLOG IES CORP QUALITY TECHNOLOGIES 74L>L>aSl Q0G34SS b E7E D HIGH-VOLTAGE VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS H11D1/1Z H11D2/2Z H11D3/3Z DESCRIPTION PACKAGE DIMENSIONS & c§3 dft t 6.86 15° MAX 6.35 0.36 I T S ngnr 8,89 8.38 0.20 7.62


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    Q0G34SS H11D1/1Z H11D2/2Z H11D3/3Z H11DX H11D1-D2, H11D3, MCT9001 PDF

    a36 smd transistor

    Abstract: transistor smd 4z
    Text: ÖUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D 74fe.bfl51 0003431 3 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS < != > CNY17-1/1Z CN Y17-3/3Z C N Y17-2/2Z CN Y17-4/4Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED


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    bfl51 CNY17-1/1Z Y17-3/3Z Y17-2/2Z Y17-4/4Z CNY17 CNY17-1: CNY17-2: CNY17-3: CNY17-4: a36 smd transistor transistor smd 4z PDF

    Untitled

    Abstract: No abstract text available
    Text: >» oc LU s <fi o t2o5 J u E 3 J - Ì P". CO o 1^ 1 1 z 1z 1 * CM CM CN O CO CO CO CO O O O . i <3- <3* Z Z Z CN CN CM CMLÍ lO ID O o co o o ir> t- r- CM CN CM LO CO CO O O CM O O O O 0 1 1 )0 0 0 o o o o o co to r-* co r- §§ 8§§ CN CN 8888 CM CM CM CM


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    O-237 MELF-002, MELF006 L0T17aa O-181LOW PDF

    smd diode UJ 64 A

    Abstract: smd TRANSISTOR 27e
    Text: dUA LIT Ÿ TE CH NOL OGIE S CÔRP QUALITY TECHNOLOGIES 27E D 74bt.aSl 00034^5 7 VDE APPROVED NON-ZERO-CROSSING TRIACS T -U -2 7 MCP3020/0Z* MCP3021/1Z MCP3022/2Z PACKAGE DIMENSIONS db db DESCRIPTION The MCP3020, MCP3021 and MCP3022 are optically isolated


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    MCP3020/0Z* MCP3021/1Z MCP3022/2Z MCP3020, MCP3021 MCP3022 MCT9001 smd diode UJ 64 A smd TRANSISTOR 27e PDF

    smd 27E

    Abstract: MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031
    Text: DUALITY- TE CHNOLOG IES CÔRP VDE APPROVED ZERO-CROSSING TRIACS QUALITY TECHNOLOGIES 7non ranee,ur 30 mA MCP3030* MCP3040/0Z* ZEHO-GKUaaiNU 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z ’ bVE ' DESCRIPTION PACKAGE DIMENSIONS These devices are optically isolated zero-crossing triac


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    MCP3030* MCP3040/0Z* 15mAMCP3031 MCP3041/1Z MCP3032 MCP3042/2Z MCP3031 MCP303Z smd 27E MCP3041 smd TRANSISTOR 27e c2075 transistor C2078 MCP3040 MOC3041 optocoupler S7E SMD TRANSISTOR transistor C2075 optocoupler moc3031 PDF

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


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    TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note PDF

    TPL621

    Abstract: MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note
    Text: Optoelectronic Products Reference Guide 2007-2008 1 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. www.toshiba.com/taec 1 Toshiba is proud to provide this comprehensive optoelectronic products reference guide. As one of the world’s largest manufacturers of optoelectronic products,


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    AQS210PSX AQS210PSZ, TLP270G TPL621 MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    KE724502

    Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
    Text: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts


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    00QCH47 T-33-35 KE72450210 KE7245021Û KE72450210 KE724502 DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72 PDF

    4311 mosfet transistor

    Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
    Text: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.


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    2SC3164 VR61F1 MA1000 MA2000 4311 mosfet transistor 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072 PDF

    Untitled

    Abstract: No abstract text available
    Text: l i Ê i w j r î Î x riïr x ï j x ._rm_mrmm r M ic m s e m i W C o m m e rc e Drive M o n tg o m eryviile . PA 18936-1013 m» Tel; {21S 631-9340 SD14Q2 RF a MICROWAVE TRANSISTORS 86 0-960MHZ CLASS C, MOBILE APPLICATION * 0.ASS C i RANSISTOR » FR irO U & N C Y


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    SD14Q2 0-960MHZ TAGE12 800MHz 870MH. 870MHz SDI482 PDF

    sc6211

    Abstract: PBSS4480X PBSS5480X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat BISS transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor


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    M3D109 PBSS5480X SCA76 R75/02/pp13 sc6211 PBSS4480X PBSS5480X PDF

    DRM004

    Abstract: dali master schematic MC74HC04N HC0438A LCD driver Motorola DALI demonstration board PVAL3N ec16b MC74HC125N dali ballast halogen SMD CODE G13 motorola
    Text: Digitally Addressable Lighting Interface DALI Unit Using the MC68HC908KX8 Designer Reference Manual M68HC08 Microcontrollers DRM004/D Rev. 3.0, 3/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS Digitally Addressable Lighting Interface (DALI) Unit Using the MC68HC908KX8


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    MC68HC908KX8 M68HC08 DRM004/D SE-252 DRM004 dali master schematic MC74HC04N HC0438A LCD driver Motorola DALI demonstration board PVAL3N ec16b MC74HC125N dali ballast halogen SMD CODE G13 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat BISS transistor Product specification 2004 Jun 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X FEATURES QUICK REFERENCE DATA


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    M3D109 PBSS5480X SC-62) SCA76 R75/01/pp12 PDF

    694JN

    Abstract: 4.20 mA Transmitter ad694 S708S HE2V
    Text: ANALOG DEVICES 4-20 mA Transmitter AD694* FEATURES 4 -2 0 mA, 0 -2 0 mA O utput Ranges Precalibrated Input Ranges: 0 V to 2 V, 0 V to 10 V Precision Voltage Reference Program m able to 2.000 V or 10.000 V Single or Dual Supply Operation W ide Power Supply Range: 4.5 V to 36 V


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    AD694* 16-Lead S-013AA AD694 8/02--Data 694JN 4.20 mA Transmitter ad694 S708S HE2V PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 8 2004 Nov 08 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X


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    M3D109 PBSS5480X R75/02/pp13 PDF

    PBSS4480X

    Abstract: PBSS5480X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2004 Jun 8 2004 Nov 08 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X


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    M3D109 PBSS5480X R75/02/pp13 PBSS4480X PBSS5480X PDF

    DRM004

    Abstract: lights MC74HC04N dali schematic PVAL3N dali master schematic HC0438A LCD driver datasheet HC0438A LCD driver hc0438a EC16B24204
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Digitally Addressable Lighting Interface DALI Unit Using the MC68HC908KX8 Designer Reference Manual M68HC08 Microcontrollers DRM004/D Rev. 3.0, 3/2002 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product,


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    MC68HC908KX8 M68HC08 DRM004/D SE-252 DRM004 lights MC74HC04N dali schematic PVAL3N dali master schematic HC0438A LCD driver datasheet HC0438A LCD driver hc0438a EC16B24204 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage


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    MMBT6517LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: H M i n y S MwHmZFK 9 W U \ * M r t \ * 0 \ + t ¥ tm M M U ftojjJlWSr PßWßtKXt JiJvftjjx'iifflj ’ 140 C o m m e rc e Drive Montgomeryville, PA 1S936-1Ö13 _ _ ^ j e j : 2 1 5 )6 3 1 -9 8 4 0 S D 1 Ä 4 2 9 - 3 RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS


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    1S936-1Ã 450-512MHz 470MHz 8D14KÃ 142S-3 S58EJOiA2^ PDF