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    TRANSISTOR COMMON COLLECTOR CONFIGURATION Search Results

    TRANSISTOR COMMON COLLECTOR CONFIGURATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR COMMON COLLECTOR CONFIGURATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor ZO 103 MA

    Abstract: zo 103 ma ZO 103 BPT25C01 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor
    Text: BIPOLARICS, INC. Part Number BPT25C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT25C01 is a high performance silicon bipolar transistor intended for use in


    Original     		BPT25C01 BPT25C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 transistor ZO 103 TRANSISTOR L 043 A transistor c3 POWER TRANSISTOR 1 WATT 2.4 GHZ oscillaor PDF

    zo 103 ma

    Abstract: transistor ZO 103 MA transistor ZO 103 ZO 103 BPT24C01 TRANSISTOR L 043 A
    Text: BIPOLARICS, INC. Part Number BPT24C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT24C01 is a high performance silicon bipolar transistor intended for use in


    Original     		BPT24C01 BPT24C01 500MHz) zo 103 ma transistor ZO 103 MA transistor ZO 103 ZO 103 TRANSISTOR L 043 A PDF

    transistor ZO 103 MA

    Abstract: zo 103 ma BPT23C01 ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ
    Text: BIPOLARICS, INC. Part Number BPT23C01 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C01 is a high performance silicon bipolar transistor intended for use in


    Original     		BPT23C01 BPT23C01 500MHz) transistor ZO 103 MA zo 103 ma ZO 103 POWER TRANSISTOR 1 WATT 2.4 GHZ PDF

    BPT23C02

    Abstract: transistor 200 watt 28 v 0-30 mhz 30GHz transistor
    Text: BIPOLARICS, INC. Part Number BPT23C02 SILICON MICROWAVE POWER OSCILLAOR TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Collector Configuration DESCRIPTION AND APPLICATIONS: Bipolarics' BPT23C02 is a high performance silicon bipolar transistor intended for use in


    Original     		BPT23C02 BPT23C02 transistor 200 watt 28 v 0-30 mhz 30GHz transistor PDF

    MS1409

    Abstract: No abstract text available
    Text: MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high


    Original     		MS1409 MS1409 PDF

    norton amplifier

    Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
    Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output


    Original     		AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3T31 DDS7b74 707 b^E » IAPX B hcJ24 H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended fo r r.f. stages in f.m. front-ends in common base configuration. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		bbS3T31 DDS7b74 hcJ24 BF324 DD27b77 PDF

    7107 ic

    Abstract: 7107 7107 datasheet 7107 GP IC 7107 MS1649
    Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor


    Original     		MS1649 MS1649 100mA 470MHz 7107 ic 7107 7107 datasheet 7107 GP IC 7107 PDF

    MS1649

    Abstract: No abstract text available
    Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor


    Original     		MS1649 MS1649 470MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor


    Original     		MS1649 MS1649 PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor


    Original     		MS1649 MS1649 470MHz PDF

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223 PDF

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


    Original     		MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1 PDF

    TF135

    Abstract: bf308
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 TF135 bf308 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.


    Original     		FPNH10 PDF

    ne5504n

    Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
    Text: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression


    OCR Scan     		E5501/5502/5503/5504-N 600mA NE5501 NE5502 NE5504 /5502/5503/5504-N NE5503 ne5504n NE5503N NE5504 cmos open collector NE5501N Transistor 5503 PDF

    STR-S5707

    Abstract: 220 ac voltage regulator without transformer 8050S 8120S quasi resonant STR S5707 STR-S5703 STR-S5708 GK-001-1 220 ac voltage regulator SMPS without transformer
    Text: Data Sheet 28114.1* STR-S5703 OFF-LINE SWITCHING REGULATOR – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 The STR-S5703 is specifically designed to meet the requirement for increased integration and reliability in off-line quasi-resonant flyback


    Original     		STR-S5703 STR-S5703 STR-S5707 220 ac voltage regulator without transformer 8050S 8120S quasi resonant STR S5707 STR-S5708 GK-001-1 220 ac voltage regulator SMPS without transformer PDF

    CBVK741B019

    Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223 PDF

    PN5179

    Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency


    Original     		PN5179 MMBT5179 OT-23 PDF

    str 5707

    Abstract: datasheet str 5707 STR 6707 SMPS CIRCUIT datasheet str 6707 str 6707 STR-S5707 str 6707 diagram guide ic str 6707 str 6708 str 5708
    Text: STR-S5703 QUASI-RESONANT QUASI-RESONANTFLYBACK FLYBACK OFF-LINE SWITCHING OFF-LINE SWITCHINGREGULATOR REGULATOR OFF-LINE SWITCHING REGULATOR – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE


    Original     		STR-S5703 STR-S5703 str 5707 datasheet str 5707 STR 6707 SMPS CIRCUIT datasheet str 6707 str 6707 STR-S5707 str 6707 diagram guide ic str 6707 str 6708 str 5708 PDF

    str 6707

    Abstract: str 5707 STR-S6707 circuit diagram datasheet str 5707 str 6709 STR 6707 SMPS CIRCUIT datasheet str 6707 str 6708 STR-S6707 thru STR-S6709 S6707
    Text: STR-S6707 THRU STR-S6709 STR-S6707 THRU STR-S6709 Data Sheet 28113* QUASI-RESONANT FLYBACK OFF-LINE SWITCHING REGULATORS OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 DRIVE 5 OVER-CURRENT PROTECTION


    Original     		STR-S6707 STR-S6709 STR-S6707, STR-S6708, STR-S6709 str 6707 str 5707 STR-S6707 circuit diagram datasheet str 5707 str 6709 STR 6707 SMPS CIRCUIT datasheet str 6707 str 6708 STR-S6707 thru STR-S6709 S6707 PDF

    ic sc 6200

    Abstract: transistor 2222a data sheet AT-38043 AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		AT-38043 OT-343 SC-70) AT-38043 5966-1275E ic sc 6200 transistor 2222a data sheet AT-38043-BLK AT-38043-TR1 AT-38043-TR2 at38043blk 38043 sc 6200 ic diagram PDF

    BF 494 C

    Abstract: ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2 AT-38043
    Text: NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies Surface Mount Package SOT-343 SC-70 Outline 4T • +25.0 dBm P1dB and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.


    Original     		AT-38043 OT-343 SC-70) AT-38043 5966-1275E BF 494 C ic sc 6200 AT-38043-TR1 transistor 2222a data sheet 5-04P SOT c5 87 ZO 607 MA AT-38043-BLK AT-38043-TR2 PDF