Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR CR MARKING Search Results

    TRANSISTOR CR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) Visit Rochester Electronics LLC Buy
    54F350/BEA Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/B2A Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) Visit Rochester Electronics LLC Buy

    TRANSISTOR CR MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    supersot 6 TE

    Abstract: Supersot 6
    Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor


    OCR Scan     		FMB1020 300mA. 100uA 100mA 150mA 100MHz 100uA, 200mA, supersot 6 TE Supersot 6 PDF

    transistor Y4

    Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
    Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package


    OCR Scan     		FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 complementary npn-pnp power transistors marking A1 TRANSISTOR marking 004 PDF

    supersot 6 TE

    Abstract: No abstract text available
    Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor


    OCR Scan     		FMB3946 100mA 100MHz 100uA, supersot 6 TE PDF

    M0607

    Abstract: No abstract text available
    Text: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR


    OCR Scan     		Q015045 M06075B400Z M0607 PDF

    LT 6724

    Abstract: D 1878 TRANSISTOR transistor 1758 si2502
    Text: MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES • Suitable for use as R F amplifier in U H F T V tuner. PACKAGE DIMENSIONS in m illim eters • Low Cr„ : 0.02 pF TYP.


    OCR Scan     		3SK135A LT 6724 D 1878 TRANSISTOR transistor 1758 si2502 PDF

    smd TRANSISTOR 1D

    Abstract: smd transistor marking 2J TRANSISTOR SMD 2X K BST122 SMD TRANSISTOR MARKING 1D transistor ZR TRANSISTOR MARKING DM Marking LR sot89
    Text: • bbSB^ai 0023^00 0^4 « A P X N AUER PH ILI PS / D IS CR E TE h7£ BST122 P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SO T89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SM D-techno logy.


    OCR Scan     		BST122 200mA bbS3T31 7Z94272 7Z94273 smd TRANSISTOR 1D smd transistor marking 2J TRANSISTOR SMD 2X K BST122 SMD TRANSISTOR MARKING 1D transistor ZR TRANSISTOR MARKING DM Marking LR sot89 PDF

    TRANSISTOR 9642

    Abstract: transistor D 2395 3SK133 te 2395 TRANSISTOR transistor B 1184 3SK133A TA 9181
    Text: MOS FIELD EFFECT TRANSISTOR 3SK133A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as RF a m p lifie r in U H F T V tuner. in m illim eters • L o w Cr „


    OCR Scan     		3SK133A TRANSISTOR 9642 transistor D 2395 3SK133 te 2395 TRANSISTOR transistor B 1184 3SK133A TA 9181 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK207 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3<;K7fl7 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. — +rnr Unit in mm 2.9 - Q 3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Cr^ = 0.015pF Typ.


    OCR Scan     		3SK207 015pF PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc


    OCR Scan     		MSB709-RT1 318D-03, SC-59 3b72S5 PDF

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Text: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04 PDF

    JY marking transistor

    Abstract: Transistor 5331 MRB11080Y
    Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates


    OCR Scan     		fafa53T31 1SD47 MRB11080Y FO-67 JY marking transistor Transistor 5331 MRB11080Y PDF

    everlight Ha 1.0

    Abstract: No abstract text available
    Text: 4 PIN LO ONG CR REEPAG GE SOP P P PHOTOT TRANSISTOR PHOTO P OCOUPL LER E EL101X-G Serie es Schematic F Features: • Free halo ogens compliiant • Current trransfer ratio CTR: 50 0~600% at IF =5mA, VCE =5V (CTR: 63 3~320% at IF =10mA, VCE =5V) • High isola


    Original     		EL101X- DPC-0000037 everlight Ha 1.0 PDF

    marking CODE M92

    Abstract: No abstract text available
    Text: • bbS3T31 0023blfi a n ■ APX BF992 N AUER PHI LIP S/ DIS CR ETE L7E D _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 m icrom iniature envelope w ith source and substrate interconnected. T his M O S-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		bbS3T31 0023blfi BF992 0023b22 marking CODE M92 PDF

    sot-23 npn marking code cr

    Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code


    Original     		2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 PDF

    transistor CR NPN

    Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
    Text: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current


    OCR Scan     		SC-74A) 2SC2411K) 2SA1036K) transistor CR NPN transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp PDF

    SL 100 NPN Transistor base emitter collector

    Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
    Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,


    OCR Scan     		2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN PDF

    transistor CR NPN

    Abstract: 2sd transistors equivalent
    Text: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2


    OCR Scan     		2SD1383K SC-59) 2SD1383K; 2SD1383K Coll229 2SD1383K, transistor CR NPN 2sd transistors equivalent PDF

    transistors 2SA

    Abstract: No abstract text available
    Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K


    OCR Scan     		2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; 2SC3906K 2SC4102 2SA1514K transistors 2SA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05


    OCR Scan     		2SC4132 OT-89, SC-62) 2SC4132; 2SC4132 PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    2SA 016

    Abstract: A1834 2SA series transistor transistor B 560
    Text: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,


    OCR Scan     		2SA1834F5 SC-63) A1834 2SC5001 2SA1834F5 2SA 016 2SA series transistor transistor B 560 PDF

    TRANSISTOR BI 237

    Abstract: NPN/TRANSISTOR BI 237
    Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for


    OCR Scan     		2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237 PDF

    113 marking code PNP transistor

    Abstract: 2sb darlington Darlington pair pnp
    Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)


    OCR Scan     		2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 2sb darlington Darlington pair pnp PDF

    2SD1664

    Abstract: marking 2sd1664
    Text: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code


    OCR Scan     		2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664 PDF