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    TRANSISTOR CR MARKING CODE Search Results

    TRANSISTOR CR MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR CR MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sot-23 npn marking code cr

    Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code


    Original     		2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 PDF

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor


    Original     		2SC2411 200mW 2SA1036. OT-23 BL/SSSTC097 PDF

    transistor marking PB

    Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4097W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.


    Original     		2SC4097W 200mW OT-323 BL/SSSTF003 transistor marking PB transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor PDF

    13003F

    Abstract: 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage


    Original     		CR13003 C-120 CR13003Rev230106E 13003F 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a PDF

    mosfet nA idss

    Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
    Text: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and


    Original     		CMRDM3590 CMRDM3590 OT-963 200mA 25-February mosfet nA idss transistor cr marking "MARKING CODE CR" mosfet low vgs PDF

    transistor cr marking

    Abstract: No abstract text available
    Text: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS


    Original     		CMRDM3590 CMRDM3590 125mW OT-963 125mA 200mA transistor cr marking PDF

    transistor 13003F

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage


    Original     		CR13003 C-120 CR13003Rev230106E transistor 13003F PDF

    transistor cr marking

    Abstract: No abstract text available
    Text: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS


    Original     		CMRDM3590 CMRDM3590 125mW OT-963 200mA transistor cr marking PDF

    D1980

    Abstract: diode marking F5
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated


    OCR Scan     		2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5 PDF

    SL 100 NPN Transistor base emitter collector

    Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
    Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,


    OCR Scan     		2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN PDF

    transistor CR NPN

    Abstract: 2sd transistors equivalent
    Text: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2


    OCR Scan     		2SD1383K SC-59) 2SD1383K; 2SD1383K Coll229 2SD1383K, transistor CR NPN 2sd transistors equivalent PDF

    transistors 2SA

    Abstract: No abstract text available
    Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K


    OCR Scan     		2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; 2SC3906K 2SC4102 2SA1514K transistors 2SA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05


    OCR Scan     		2SC4132 OT-89, SC-62) 2SC4132; 2SC4132 PDF

    TRANSISTOR BI 237

    Abstract: NPN/TRANSISTOR BI 237
    Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for


    OCR Scan     		2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237 PDF

    113 marking code PNP transistor

    Abstract: 2sb darlington Darlington pair pnp
    Text: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)


    OCR Scan     		2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 2sb darlington Darlington pair pnp PDF

    2SD1834

    Abstract: No abstract text available
    Text: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA


    OCR Scan     		2SD1834 OT-89, SC-62) 2SD1834; A/500 2SD1834 2SD1834, PDF

    transistor QB

    Abstract: PNP TRANSISTOR SOT89
    Text: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; A E *, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = -2 A/-0.1 A


    OCR Scan     		2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor QB PNP TRANSISTOR SOT89 PDF

    MMBT2222

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		1b414E 0007253M MMBT2222 lo-10mA, PDF

    2SD1664

    Abstract: marking 2sd1664
    Text: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code


    OCR Scan     		2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664 PDF

    SC marking code NPN transistor

    Abstract: No abstract text available
    Text: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage


    OCR Scan     		2SD1782K SC-59) 2SD1782K; 2SB1198K 2SD1782K SC marking code NPN transistor PDF

    2SA amplifier

    Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
    Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K


    OCR Scan     		2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; -120V 2SC3906K 2SC4102 2SA1514K 2SA amplifier H1000I 2SA1579 2SC4102 transistor 2SA transistor PNP PDF

    TRANSISTOR b1181

    Abstract: b1181 2SB1181F5
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,


    OCR Scan     		2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]


    OCR Scan     		2SC2413K 2SC4098 SC-59) SC-70) 2SC2413K, 2SC4098; 2SC4098 PDF

    A1807

    Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
    Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for


    OCR Scan     		2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v PDF