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    TRANSISTOR D 1002 Search Results

    TRANSISTOR D 1002 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D 1002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR SMD CODE 15

    Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
    Text: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:


    Original     		2SD669XD/2SD669AXD O-252) MIL-STD-202G, 2SD669XD 2SD669AXD TRANSISTOR SMD CODE 15 smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A PDF

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		Q01414fl BLY89A 7Z675I bly89a Transistor bly89a PDF

    ic TT 2222

    Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
    Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    CZT5401

    Abstract: No abstract text available
    Text: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.


    Original     		CZT5401 OT-223 CZT5401 -10mA -50mA -10mA -50mA PDF

    CZT5551

    Abstract: No abstract text available
    Text: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.


    Original     		CZT5551 OT-223 CZT5551 100MHz 01-Jun-2004 PDF

    BU2522AF

    Abstract: BY228
    Text: N AMER PHILIPS/DISCRETE b*ïE D • bbS3^31 002ôbi4ê Philips Sem iconductors SOS MAPX Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended


    OCR Scan     		BU2522AF BU2522AF BY228 PDF

    PZT5551

    Abstract: No abstract text available
    Text: PZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.


    Original     		PZT5551 OT-223 PZT5551 100MHz 01-Jun-2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4 0 3 3 is an epitaxial PNP silicon planar transistor in TO 3 9 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistor is particularly intended for


    OCR Scan     		23SbOS PDF

    Untitled

    Abstract: No abstract text available
    Text: 6427525 N E C N E C ELECTRONICS INC 98D ELECTRONICS INC 1 fìfìfì7 n t.427S25 ODlflflflV 4 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK704 D E SC R IPTIO N The 2SK704 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM EN SIO N S designed for solenoid, motor and lamp driver.


    OCR Scan     		427S25 2SK704 2SK704 T-39-11 10-Dram PDF

    PZT772

    Abstract: No abstract text available
    Text: PZT772 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT772 is designed for using in output stage of 2W amplifier, voltage regulator, DC-DC converter and driver. REF. A C D E I H 7 7 2 Date Code


    Original     		PZT772 OT-223 PZT772 -20mA 100MHz 01-Jun-2002 PDF

    BUK455-500B

    Abstract: T0220AB
    Text: PHILIPS IN TER NATIONA L bSE D B 711Dfl2b DObMDTb SDÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		BUK455-500B T0220AB /V-100/ PDF

    FX1115

    Abstract: BLX65 TRANSISTOR D 471 IEC134 philips choke ferrite FX111
    Text: N AMER P H I L IP S /D IS C RE TE bTE D • ^53131 J QD2^bD 3 231 BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in c!ass-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the


    OCR Scan     		bb53T31 BLX65 O-39/1; FX1115 BLX65 TRANSISTOR D 471 IEC134 philips choke ferrite FX111 PDF

    CSB507

    Abstract: CSD313
    Text: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications MIN DIM MAX A 14.42 16.51 9.63 B 10.67 C 3.56 4.83 D 0.90 E 1,15 1,40 F 3.75 3,86 G 2,29 2.79 H 2,54 3.43 J 0,56 K 12.70 14.73


    OCR Scan     		CSB507, CSD313 CSB507 CSD313 PDF

    Untitled

    Abstract: No abstract text available
    Text: CSB507, CSD313 CSB507 CSD313 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A 8 C w * fv r D E F G H J K L ° J g M N MIN MAX 16.51 10.67


    OCR Scan     		CSB507, CSD313 CSB507 PDF

    MOTOROLA OPTOELECTRONIC

    Abstract: MOCD208
    Text: MOTOROLA Order this document by MQCD207/D SEMICONDUCTOR TECHNICAL DATA MOCD207 [CTR = 100-200%] Dual Channel Small Outline Optoisolators MOCD208 [CTR = 40-125%] Transistor Output M o to ro la P referre d D e vices These devices consist of two gallium arsenide infrared emitting diodes


    OCR Scan     		MQCD207/D MOCD207 MOCD207/D MOTOROLA OPTOELECTRONIC MOCD208 PDF

    2SC2539

    Abstract: transistor 2SC2539 RF POWER TRANSISTOR NPN vhf transistor rf vhf
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2539 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2539 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m obile radio applications. D im e n s io n s in m m


    OCR Scan     		2SC2539 175MHz 175MHz, 175MHz 2SC2539 transistor 2SC2539 RF POWER TRANSISTOR NPN vhf transistor rf vhf PDF

    2N5109 motorola

    Abstract: transistor 2N5109 c0851 2n5109
    Text: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good


    OCR Scan     		2N5109 abo2-46 2N5109 motorola transistor 2N5109 c0851 2n5109 PDF

    BLX65

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bb53^31 0DSTbD3 531 IAPX BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the


    OCR Scan     		BLX65 7Z61745 BLX65 PDF

    Untitled

    Abstract: No abstract text available
    Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm


    OCR Scan     		2SC3022 2SC3022 520MHz, PDF

    PL 431 transistor

    Abstract: BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R
    Text: PHILIPS INTERNATIONAL 711DÖSb 0Db3SPD 5 TB I IPHIN t>5E D BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO -39 metal envelope with the collector connected to the


    OCR Scan     		711002b BLX65 O-39/1; PL 431 transistor BLX65 FX1115 transistor w 431 y 431 transistor transistor 1002 IEC134 0-22 p trimmer h a 431 transistor transistor H-R PDF

    smd transistor marking DK RH

    Abstract: smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto
    Text: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • D ual Marked w ith D evice Part Num ber and DESC


    OCR Scan     		HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, HCPL-2530/ HCPL-5530) smd transistor marking DK RH smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 n - Provisional Data Sheet No. P D - 9.1718 International IOR Rectifier IRFE330 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D JANTX2N6800U HEXFET TRANSISTOR JANTXV2N6800U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 400Volt,1.0£2, HEXFET


    OCR Scan     		IRFE330 JANTX2N6800U JANTXV2N6800U MIL-PRF-19500/557] 400Volt IRFE330 PDF