TRANSISTOR D 1264 A Search Results

TRANSISTOR D 1264 A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR D 1264 A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IEC-134 Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134 Text: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied	OCR Scan	BFR540 BFG540 OT143) BFG541 OT223) X3A-BFR540 X3A-BFR540 711002b 15iim RV-3-5-52/733 IEC-134 BFR540 transistor d 1264 BFG541 BFG540 IEC134	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied	OCR Scan	X3A-BFR540 BFR540 BFG540 OT143) BFG541 OT223)	PDF
Untitled Abstract: No abstract text available Text: l O K V BASEEFA N i Type Vf No. @ lf 2 0 m A V o lt s m a x ertified T I r = 2V jjA m a x OPTO ubular Transistor Diode D e s c r ip t io n C Isolators C o u p led C TR % V b r ceo V b r ( eco ) @ lc = 1 m A @ I e =100\| j A @ Vce=10V V o lts m in V o lts m in	OCR Scan	I1264 95C2215U	PDF
transistor A 1264 Abstract: ev 1265 transistor Text: SIEMENS BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA ' f j = 7,5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz OT-343 Q62702-F1504 transistor A 1264 ev 1265 transistor	PDF
Untitled Abstract: No abstract text available Text: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −4.0	Original	MPS6729 O-226) MPSW55 MPSW56	PDF
Untitled Abstract: No abstract text available Text: FT1011/FT1011A Voltage Comparator Voltage Comparator • ■ ■ ■ ■ ■ ■ ■ Description Pin Compatible with FT111 Series Devices Guaranteed Max 0.5mV Input Offset Voltage Guaranteed Max 25nA Input Bias Current Guaranteed Max 3nA Input Offset Current	Original	FT1011/FT1011A FT111 250ns FT1011 FT111. FT111,	PDF
NTE7493A Abstract: NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74HC86 NTE74C90 Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator NTE74S6, NTE74HC86,14-Lead DIP, See Diag. 247 NTE74LS86, NTE74S86	OCR Scan	NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE74S6, NTE74HC86 14-Lead NTE74LS86, NTE7493A NTE7490 NTE74LS86 NTE74LS90 NTE7495 NTE74S86 NTE7486 NTE7489 NTE74C90	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1	PDF
EB209 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband	Original	MRF1550T1/D MRF1550T1 MRF1550T1/D EB209	PDF
stripline directional couplers Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,	Original	SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1	PDF
L5N1 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1 L5N1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1	PDF
FERROXCUBE VK200 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1535T1/D MRF1535T1 MRF1535T1/D FERROXCUBE VK200	PDF
A05T Abstract: AN211A AN215A AN721 MRF1550FT1 MRF1550T1 VK200 Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550T1/D MRF1550T1 MRF1550FT1 A05T AN211A AN215A AN721 MRF1550FT1 VK200	PDF

Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1550T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550T1/D MRF1550T1 MRF1550FT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 15, 6/2009 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1	PDF
MRF1550 Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200 Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 MRF1550 FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N VK200	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 14, 10/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 12, 2/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550N	PDF
H270 Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452 Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International	OCR Scan	IRFI460D IRFI460U O-259 MIL-S-19500 SSM52 H270 KU ll 14a IRFI460 IRFI460D IRFI460U SS452	PDF
adc 0304 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF1550T1 Rev. 8, 3/2005 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 MRF1550T1 MRF1550FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	MRF1550T1 MRF1550NT1 MRF1550FNT1 MRF1550FT1 adc 0304	PDF
capacitor 475 Abstract: A05T AN211A AN215A AN721 MRF1535FT1 MRF1535T1 VK200 Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	MRF1535T1/D MRF1535T1 MRF1535FT1 capacitor 475 A05T AN211A AN215A AN721 MRF1535FT1 VK200	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1535T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	MRF1535T1/D MRF1535T1 MRF1535FT1	PDF
QD03-2 Abstract: No abstract text available Text: SEMTECH CORP 5ÛE 0 1 3 ^ 1 3 ^ 3 00 32 07 D 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS LAS 2200 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MAXIMUM UNITS V\|N 40 Volts 3 7 .5 Volts Input Voltage Input-O utput V oltage D ifferential V\|N‘ V o Pow er D iss ip a tio n '	OCR Scan		PDF

TRANSISTOR D 1264 A Search Results

TRANSISTOR D 1264 A Result Highlights (5)

TRANSISTOR D 1264 A Datasheets Context Search

IEC-134

Untitled

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transistor A 1264

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NTE7493A

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EB209

stripline directional couplers

L5N1

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FERROXCUBE VK200

A05T

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MRF1550

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H270

adc 0304

capacitor 475

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QD03-2