2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.
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BFQ33C
bbS3T31
BFQ33
bbS3T31
T-37-15
7Z89164
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BFQ33
Abstract: SOT-100 BFQ33C IEC134 transistor bbs
Text: AMER PHILIPS/DISCRETE 5SE D • 0017333 G ■ B F Q 3 3 C is recommended for new design BFQ33 ^ T - S l - i g N-P-N MICROWAVE TRANSISTOR The B F Q is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation featuring an extremely high transition frequency of 12 G H z and very low noise.
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BFQ33C
BFQ33
BFQ33
SOT-100
IEC134
transistor bbs
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2N2270
Abstract: transistor 2n2270 RCA-2N2270 RCA Solid State Power Transistor D-07 2N2270 RCA
Text: E SOLID STATE 3875081 öl G E SOLID STATE DE | 3 Ö 7 S D Ö 1 ODITOT? 0 1E 17097 D T - l f ~ High-Speed Power Transistors_ 2N2270 File Number 2 4 Silicon N-P-N Planar Transistor TERMINAL DESIGNATIONS General-Purpose Type for Small-Signal, Medium-Power Applications
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2N2270
RCA-2N2270
92CS-IU7IH2
92CS-III79RI
GD171DQ
2N2270
transistor 2n2270
RCA Solid State Power Transistor
D-07
2N2270 RCA
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UC3845BN
Abstract: MBR370 MTP3N120E-D MUR430 Flyback Switching Power Supply UC3845BN USED CIRCUIT datasheet an1327 AN1327 AN569 MOC8102
Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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MTP3N120E/D
MTP3N120E
MTP3N120E/D*
UC3845BN
MBR370
MTP3N120E-D
MUR430
Flyback Switching Power Supply
UC3845BN USED CIRCUIT
datasheet an1327
AN1327
AN569
MOC8102
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RCA-2N2270
Abstract: 2N2270 2N2270 RCA rca 2N2270 transistor 2n2270 SILICON TRANSISTOR FS 2 RCA Solid State Power Transistor
Text: E SOLID 3875081 STATE G E Öl SO LID STATE » E | 3Ö750Ö1 0D170T7 01E D T - l f - i l 17097 High-Speed Power 2N2270 File Number Silicon N-P-N Planar Transistor 24 TERMINAL DESIGNATIONS
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0D170T7
2N2270
RCA-2N2270
92CS-III79RI
2N2270
2N2270 RCA
rca 2N2270
transistor 2n2270
SILICON TRANSISTOR FS 2
RCA Solid State Power Transistor
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3 N 120E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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MTP3N120E/D
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Untitled
Abstract: No abstract text available
Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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DD14TS7
LTE21009R
LTE21015R
FO-41B)
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al 232 nec
Abstract: NE64400 NE644 NE64408 S21E
Text: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors
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b427414
NE64400
NE64408
NE644
gain60
al 232 nec
NE64408
S21E
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Transistor 2gmz
Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
Text: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and
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2N5920
10-dB
12-dB
2N5920*
O-215AA
Transistor 2gmz
westinghouse relay c8
2N5921
radar distance
2N5120
allen bradley potentiometer type j
ALLEN-BRADLEY POTENTIOMETER
WESTINGHOUSE ELECTRIC
2N5920
WESTINGHOUSE driver
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transistor d 1710
Abstract: DCT114 DCT114Y TL 188 TRANSISTOR PIN DIAGRAM T4500 MD5900
Text: MD59-0022 PCS CDMA Upconverter / Driver 1710— 1710 — 1910 GHz TSSOP-16 Plastic Package1 Features • • • • • • • • .039 (1) High Integrated Upconverter and Driver IC Operates over 2.7 V to 5V Supply Voltage +9 dBm Output Power at 51 dBc ACPR
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MD59-0022
TSSOP-16
MD59-0022
transistor d 1710
DCT114
DCT114Y
TL 188 TRANSISTOR PIN DIAGRAM
T4500
MD5900
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PDF
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DCT114
Abstract: Intermediate frequency transformer transistor D 1710 high power fet amplifier schematic DCT114Y 169 MHz RF CHIP MD59-0022 MD59-0022RTR MD59-0022SMB MD59-0022TR
Text: MD59-0022 PCS CDMA Upconverter / Driver 1710— 1710 — 1910 MHz TSSOP-16 Plastic Package1 Features • • • • • • • • .039 (1) High Integrated Upconverter and Driver IC Operates over 2.7 V to 5V Supply Voltage +9 dBm Output Power at 51 dBc ACPR
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MD59-0022
TSSOP-16
MD59-0022
DCT114
Intermediate frequency transformer
transistor D 1710
high power fet amplifier schematic
DCT114Y
169 MHz RF CHIP
MD59-0022RTR
MD59-0022SMB
MD59-0022TR
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pin diagram of ic 8088
Abstract: fujitsu rf power amplifier 49 Fujitsu SAW FUJITSU saw filter
Text: Preliminary Information PCS CDMA Upconverter / Driver 1710-1910 MHz MD59-0022 V1.00 Features passivation for increased performance and reliability. • • • • TSSOP16 Highly Integrated Upconverter / Driver IC Operates Over 2.7 V to 5 V Supply Voltage
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51dBc
10dBm
TSSOP16
MD59-0022
TSSOP16
Pin16
MD59-0022
pin diagram of ic 8088
fujitsu rf power amplifier 49
Fujitsu SAW
FUJITSU saw filter
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T1902
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT1902 T X PO W ER MMIC Advanced Product Information Rev 3 DCS1800/P C S 1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902X is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone
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AWT1902
DCS1800/P
AWT1902X
PCS1900
T1902
MMUN2134
SI9405
PCS1900
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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Untitled
Abstract: No abstract text available
Text: RF RF2157 Preliminary MICRO DEVICES PCS CDMA/TDM A 3 V POWER A M P L IF IE R Typical Applications • Spread Spectrum Systems • 3V 1710-1780 CDMA PCS Handsets • Commercial and Consumer Systems • 3 V T D M A PCS Handsets • Portable Battery-Powered Equipment
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RF2157
RF2157
1710MHz
1910MHz
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TL902
Abstract: No abstract text available
Text: AWT 1902 TX POWER MMIC Ehrftoqcs* A d va n ce d P roduct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone
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AWT1902
PCS1900
DCS1800/PCS1900
MMUN2134
SI9405
PCS1900
DCS1800
awt1902,
TL902
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Untitled
Abstract: No abstract text available
Text: m • i E 0Ö1MSV7 nbbgo* 0DD07EÖ bfiZ AWT1902X TX POWER MMIC Advanced Product Information Your GaAs IC Source Rev 3 DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902X is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785
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0DD07EÖ
AWT1902X
DCS1800/PCS1900
PCS1900
1000pF
MMUN2134
SI9405
PCS1900
DCS1800
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Untitled
Abstract: No abstract text available
Text: AWT1902 TX POWER MMIC KmmoG" A d va n ce d P rodu ct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone
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AWT1902
DCS1800/PCS1900
AWT1902
PCS1900
MMUN2134
SI9405
PCS1900
DCS1800
awt1902,
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Untitled
Abstract: No abstract text available
Text: bEM'ìùE'ì □□1710b □□£ MITSUBISHI RF POWER MODULE m _ M57704M 430-450MHZ, 12.5V, 13W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM —I I— PIN : 3 Pin : RF INPUT ©VCOI : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY ®VCC3 : '3rd. DC SUPPLY
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1710b
M57704M
430-450MHZ,
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Si9405
Abstract: AWT1902 5000Z amplifier circuit diagram DCS1800 MMUN2134 PCS1900
Text: AWT1902 TX POWER MMIC Advanced Product Information Rev 3 DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone
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AWT1902
DCS1800/PCS1900
AWT1902
PCS1900
MMUN2134
SI9405
PCS1900
DCS1800
5000z
5132z
Si9405
5000Z amplifier circuit diagram
MMUN2134
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PDF
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Untitled
Abstract: No abstract text available
Text: HF RF2153 Preliminary MICRO-DEVICES CDMA/TDMA/PACS 1 9 0 0 M H Z 3 V POWER AM PLIFIER Typ ical A p plications • 3 V TDMA PCS Handsets • 3V 1850-1910 CDMA PCS Handsets • Spread Spectrum Systems • 3V 1710-1780 CDMA PCS Handsets • Commercial and Consumer Systems
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RF2153
F2153
1600M
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Untitled
Abstract: No abstract text available
Text: HARRIS H 17106 S E M I C O N D U C T O R 3 1/2 Digit, LCD/LED Display, A/D Converter July 1998 Features Description • Guaranteed Zero Reading for OV Input on All Scales The Harris HI7106 is a high performance, low power, 3 1/2 digit A/D converter. Included are seven segm ent decoders,
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HI7106
1-800-4-HARRIS
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