MAX603
Abstract: 4936M MAX603CPA MAX603CSA MAX603EPA MAX603ESA MAX603MJA MAX604 MAX604CPA
Text: 19-0269; Rev 0; 9/94 5V/3.3V or Adjustable, Low-Dropout, Low IQ, 500mA Linear Regulators The MAX603/MAX604 low-dropout, low quiescent current, linear regulators supply 5V, 3.3V, or an adjustable output for currents up to 500mA. They are available in a 1.8W SO package. Typical dropouts are 320mV at 5V
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500mA
MAX603/MAX604
500mA.
320mV
500mA,
240mV
200mA.
MAX604
MAX603.
MAX603
4936M
MAX603CPA
MAX603CSA
MAX603EPA
MAX603ESA
MAX603MJA
MAX604CPA
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Untitled
Abstract: No abstract text available
Text: MAX603/MAX604 LE AVAILAB 5V/3.3V or Adjustable, Low-Dropout, Low IQ, 500mA Linear Regulators _General Description The MAX603/MAX604 low-dropout, low quiescent current, linear regulators supply 5V, 3.3V, or an adjustable output for currents up to 500mA. They are available in a
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MAX603/MAX604
500mA
MAX603/MAX604
500mA.
320mV
500mA,
240mV
200mA.
MAX604
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BD807
Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Text: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
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G0fi47til
BD805
BD809
BD806
BD807
Temperatu03
AN-415)
transistor 1127
PJ 0446
pj 809
ADC ic adc 809
pj 807
MOTOROLA transistor 413
ADC 808
adc 809
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TRANSISTOR T 410
Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Text: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl235bOS
Q68000-A5440
Q68000-A5172
Q68000-A5173
Q68000-A5174
Q68000-A5175
BF410B
Vbs-10V
0G04MÃ
BF410D
TRANSISTOR T 410
abf410
DSG52
922S
BF410D
410c
BF410A
BF410C
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mmbth10lt1
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBTH10LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 M o t o r o la P r e f e r r e d D e v ic e 2 EMITTER CASE 318-08, STY LE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage
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MMBTH10LT1/D
MMBTH10LT1
OT-23
O-236AB)
mmbth10lt1
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lm5752
Abstract: K 3919 2SJ128 3919 lm575
Text: N E C EL EC TR ON IC S INC 6427525 N E C Tfl ELECTRONICS DE I ti457S5S DQlTDEa b 9ÖD INC D 19023 T '-3 < 7 - 7 MOS FIELD EFFECT POWER TRANSISTOR 2SJ128 FAST SW ITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (Unit: mm FEATURES
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b4S7555
DDnD53
2SJ128
LM5752S
T-39-19
/ffs-25
VDS-10
1986M
lm5752
K 3919
2SJ128
3919
lm575
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BF410C
Abstract: a5175
Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect
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fl23SbQS
Q68000-A5440
68000-A5172
68000-A5173
68000-A5174
68000-A5175
0Q044
BF410D
BF410C
a5175
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MRF525
Abstract: itt 2907A LT 7220 2n 2714 ITT 7220
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 10 0 -5 0 0 MHz BROADBAND HIGH F REQ U EN C Y T RA N SISTO R NPN SILIC O N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . d e s ig n e d s p e c if ic a lly fo r b ro a d b a n d lin e a r a m p lifie r s ta g e s in
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Coll02
MRF525
itt 2907A
LT 7220
2n 2714
ITT 7220
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2SJ122
Abstract: 2SJ128-Z 3919
Text: 642 75 25 N E C N EC ELE CT RONIC S INC 98D 19027 ELECTRONICS INC ~ iß D T'-Jr-/? DE | b427555 001^057 3 y / lELETRGN DEVICE MOS FIELD EFFECT POWER TRANSISTOR . / Ä ^ ^ ^ Ä _ 2 S J 1 2 S - Z FAST SWITCHING P-CHANNE1 SILICON POW ER MOS FzT INDUSTRIAL USE
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b4B755S
0DnG27
2SJ128-Z
T-39-19
12SJ128-2
2SJ122
2SJ128-Z
3919
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MRF6401
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is d e signed fo r C lass A com m on e m itter, lin e a r pow er am plifiers in the 1 .0 - 2 .0 GHz frequency range. It has been sp e cifica lly
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MRF6401/D
MRF6401
MRF6401PHT/D
2PHX33566Q-1
1359A
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Untitled
Abstract: No abstract text available
Text: N E C ELECT R ON I CS INC 6427525 N E C Tfl ELECTRONICS DE I ti457S5S DOlTDEa t L 19023 98D INC D MOS FIELD EFFECT POWER TRANSISTOR 2 S J 128 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS Unit: mm • Suitable for switching power supplies, actuater controls, and
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ti457S5S
LM57SSS
T-39-19
1986M
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2N1025
Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
Text: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.
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MIL-5-19500/78C
MIL-S-19500/78B
2N1025,
2N1026
2N1469
2N1025
2N1469
CU10A
2N1026 JAN
2N146
vqb 71
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Untitled
Abstract: No abstract text available
Text: | , I International IO R Rectifier PD-9.1544 provisional IR G B C 2 0 S D 2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack Features • Switching-loss rating includes all 'tail' losses • HEXFRED soft ultrafast diodes
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400HZ)
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D10N2
Abstract: marking dC
Text: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak
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MRF10070H*
1PHX312SO-1
MRF10070H/D
3b72S4
D10N2
marking dC
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1amx
Abstract: transistor marking 1am RN1903 marking 1am
Text: TOSHIBA RN1901-RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 .1 ± 0.1 , L 2 5 ± Q .l Including Two Devices in US6
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RN1901-RN1906
RN1901,
RN1902,
RN1903,
RN1904,
RN1905,
RN1906
RN2901-RN2906
RN1901
RN1902
1amx
transistor marking 1am
RN1903
marking 1am
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40n60 transistor
Abstract: MTE40N60 40n60 40N60 snubber 72SM MTE40N55 belleville washer T-39-15 diode n55 H3677
Text: n O T O K O L A SC -CXSTRS/R F > ~ b4 -T-'iy-lü D T | t . 3 b 7 2 S 4 DDtflllB Ö MOTOROLA SEMICONDUCTOR S É IS Â S lf TECHNICAL DATA Designer's Data Sheet M TE40N55 M TE40N60 If Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS
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MTE40N55
MTE40N60
MQ-040AA
HP202NF
MTE40N55
LIT30
C3I755
H3677
40n60 transistor
MTE40N60
40n60
40N60 snubber
72SM
belleville washer
T-39-15
diode n55
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MRF344
Abstract: transistor D 2588 MRF340 MRF342 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586
Text: MOTOROLA SC XSTRS/R F 4bE b 3 b 7 2 S M OOTMbO? 1 » MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W 1 0 0 -1 5 0 M H z R F POW ER T R A N S IS T O R NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d e s ig n e d p r im a r ily f o r u s e in V H F a m p lifie r s w it h a m p litu d e
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b3b72SM
MRF344
T0-220AB
MRF340
MRF342
T-33-11
MRF344
transistor D 2588
erie redcap
221A-04
RF POWER TRANSISTOR NPN
150 watts power amplifier layout
TRANSISTOR 2586
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93 marking sc-59
Abstract: N2211 2213T1
Text: Order this data sheet by MUN2211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M U N2211T1 M UN2212T1 M U N 2213T1 B ias R e sisto r T ra n s is to r NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and
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MUN2211T1/D
SC-59
MUN2211T1
MUN2212T1
MUN2213T1
2PHX31020F-2
93 marking sc-59
N2211
2213T1
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2N6794
Abstract: No abstract text available
Text: m 43D2E71 005377k. flfil • HAS 2N6794 33 HARRIS N-Channel Enhancem ent-M ode Power M O S Field-Effect Transistor August 1991 Package Features T 0 -2 0 5 A F • 1.5A, 500V B O T T O M VIEW • rD S o n = 3f2 • S O A is P o w e r-D issip a tio n Limited
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43D2E71
005377k.
2N6794
2N6794
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2N6823
Abstract: transistor 3s4 2n6823 transistor AN569 motorola mosfet
Text: MOTOROLA SC X S T R S /R 1HE D I F b3fc>?254 G O f l i b m T 3 | S MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 2N6823 Designer's Data Sheet Pow er Field Effect Transistor N -C h an n el Enh an cem en t-M ode S ilic o n G ate T M O S TMOS POWER FETs 3 AMPERES ros on = 2 8 OHMS
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2N6823
i3iq005k8
T0-204AA
O-204AA
transistor 3s4
2n6823 transistor
AN569
motorola mosfet
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TRANSISTOR REPLACEMENT ECG
Abstract: ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906
Text: PHILIPS E C G INC ECG Semiconductors 17E ECG 1902, ECG1906, ECG 1908 / 3-Terminal, Positive Fixed V R .200 ' Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection • Internal short circuit current limit
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ECG1902,
ECG1906,
ECG1908
T--58--11--13
TRANSISTOR REPLACEMENT ECG
ECG Semiconductors transistor 171
DO-40 diode
ECG190
ECG1906
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2N6794
Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds
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2N6794
2N6794
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6794 JANTX
fllnm 80
3v 4 channal relay
fllnm
qpl-19500
LH0063
TRANSISTOR C 557 B
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6796 IR
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TL902
Abstract: No abstract text available
Text: AWT 1902 TX POWER MMIC Ehrftoqcs* A d va n ce d P roduct Inform ation Rev 3 Your GaAs IC Source DCS1800/PCS1900 GaAs 4.8 V Single Supply Power Amplifier IC DESCRIPTION The AWT1902 is a 3 stage monolithic Power Amplifier IC suited for DCS 1800 1710-1785 and PCS1900 (1850-1910) cellular telephone
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AWT1902
PCS1900
DCS1800/PCS1900
MMUN2134
SI9405
PCS1900
DCS1800
awt1902,
TL902
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